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Winbond Electronics Corporation W632GG6KB-12 TR

Part No.:
W632GG6KB-12 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW632GG6KB-12 TR.pdf
Description:
IC DRAM 2GBIT 96-WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,563

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Product details

Overview

W632GG6KB-12 TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with CL=11, CWL=7, and tCK(AVG) = 1.875–2.5 ns. It features eight internal banks, 8-bit prefetch, programmable ODT, ZQ calibration, and asynchronous RESET# for embedded and industrial memory subsystems.

For engineers reviewing the W632GG6KB-12 TR datasheet, W632GG6KB-12 TR pinout, W632GG6KB-12 TR application, or W632GG6KB-12 TR equivalent, this page delivers verified DDR3-1600 timing parameters, ball-mapped I/O roles, SSTL_15 interface compliance, industrial-grade thermal support (0°C to 95°C), and validated alternatives for memory subsystem design and BOM continuity.

Technical Context

This DDR3 SDRAM implements a source-synchronous interface with differential CK/CK# and DQS/DQS# pairs, where inputs are latched at the crossing of CK rising and CK# falling edges, and data strobes are edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ–DQS–CK timing coordination across process, voltage, and temperature.

It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and dynamic ODT (Rtt_WR) with configurable termination impedances (60 Ω, 120 Ω, 40 Ω). Refresh modes include Auto Refresh, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density2 Gb (16,777,216 words × 8 banks × 16 bits)
Data Rate1600 Mb/s/pin (DDR3-1600, fCK = 800 MHz)
CAS Latency (CL)Configurable CL = 6, 7, 8, 9, 10, 11; CL = 11 used in -12 speed grade
CAS Write Latency (CWL)Configurable CWL = 5–8; CWL = 7 for DDR3-1600 operation
Timing (tRCD/tRP/tRC)11-11-11 (min 13.75 ns each at 800 MHz)
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V; SSTL_15-compatible I/O
Operating Temperature0°C ≤ TCASE ≤ 95°C (commercial extended range)
PackageWBGA-96 (9 mm × 13 mm, RoHS-compliant, lead-free)

Pinout & Package

W632GG6KB-12 TR uses a 96-ball WBGA package (9 mm × 13 mm) with ball pitch of 0.8 mm, optimized for high-density PCB layouts and thermal performance in memory modules and SoC interfaces.

Pin/Terminal Circuit Role Design Meaning
CK / CK#Differential Clock InputLatches all command/address inputs at cross-point; defines system timing reference
CKEClock EnableAsynchronous control for power-down entry/exit and Self-Refresh activation
CS#, RAS#, CAS#, WE#Command InputsDecode ACT, READ, WRITE, PRECHARGE, REFRESH, MRS commands
A0–A13, BA0–BA2Address & Bank SelectRow/column/bank addressing; A10/AP supports auto-precharge or partial array refresh
DQ[0:15], DQSU/DQSU#, DQSL/DQSL#Data I/O & Strobe Pairs16-bit bidirectional data bus with source-synchronous DQS tracking; DQSU/DQSL split for upper/lower byte
DMU / DMLData MaskByte-level write masking for upper/lower 8-bit lanes during burst writes
ODTOn-Die Termination ControlEnables programmable termination on DQ/DQS/DM lines to suppress reflections
ZQZQ Calibration ReferenceConnects to external 240 Ω ±1 % resistor for output driver and ODT impedance tuning
RESET#Asynchronous ResetInitiates power-up initialization sequence and resets internal state machines
VDD / VDDQ / VSS / VSSQ / VREFCA / VREFDQPower & ReferenceSeparate analog/digital supplies and reference voltages ensure signal integrity and noise immunity

Key Features

Feature Design Value
Programmable ODTConfigurable termination resistances (60 Ω, 120 Ω, 40 Ω) on DQ/DQS/DM lines reduce signal reflections without external resistors
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor ensures ±1 % output driver and ODT impedance accuracy over PVT
Write LevelingPer-lane DQS-to-CK delay adjustment enables robust DDR3 write capture at 800 MHz clock frequency
Multi-Purpose Register (MPR)Predefined read pattern supports system-level timing calibration and margin testing without disturbing memory contents
Dynamic ODT (Rtt_WR)On-the-fly ODT activation during write bursts improves signal integrity on shared DQ buses in multi-rank systems
Auto Self-Refresh (ASR)Temperature-compensated refresh rate adjustment extends reliable operation up to 95°C case temperature

Applications

Industrial HMI Controllers Network Edge Routers

Use Scenario: Real-time display rendering and multitasking in factory-floor HMIs with extended temperature operation.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A series processors via 16-bit DDR3 bus.

Use Value: Supports DDR3-1600 bandwidth (12.8 GB/s peak) and ASR mode for unattended 24/7 operation at 95°C case temperature.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers with multi-rank DIMM support.

IC Role / Device Role / Timing Role: Rank-level DDR3 component enabling concurrent read/write access across eight internal banks.

Use Value: Dynamic ODT and write leveling ensure signal integrity across 16-bit wide, 800 MHz backplane traces with >30 mm length.

Medical Imaging Subsystems Automotive ADAS Domain Controllers

Use Scenario: Frame buffer and algorithm scratchpad in ultrasound and MRI front-end processing units.

IC Role / Device Role / Timing Role: Low-latency, high-reliability memory supporting burst transfers for real-time image reconstruction.

Use Value: Programmable CL/CWL and tRCD/tRP = 11-11-11 enable deterministic sub-15 ns access timing under variable load conditions.

Use Scenario: Sensor fusion and vision processing memory in ISO 26262-compliant ADAS ECUs requiring extended temp support.

IC Role / Device Role / Timing Role: On-board DDR3 memory for NVIDIA Tegra or NXP S32G processors with ECC-capable controllers.

Use Value: Asynchronous RESET# and robust power-down modes meet automotive cold-cranking and sleep-mode current (<19 mA IDD6) requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K128M16HA-125:E1.35 V DDR3L compatible; same 2Gb density, 96-ball FBGA but different ball map and tREFI behaviorTargeted for low-power portable systems; lacks industrial 95°C support and ASR modeSelect when designing for DDR3L voltage scaling or when migrating from Micron-based platforms
IS43TR16256B-125KBLSame DDR3-1600 speed grade and 96-ball WBGA package; identical CL=11/CWL=7 timing but different ZQ calibration sequenceOptimized for cost-sensitive industrial gateways; no PASR support and narrower tAA min spec (13.5 ns vs. 13.75 ns)Choose for drop-in replacement where ZQ timing flexibility and partial array refresh are not required

Compared with MT41K128M16HA-125:E and IS43TR16256B-125KBL, W632GG6KB-12 TR uniquely combines industrial 95°C operation, ASR, PASR, and full JEDEC DDR3-1600 compliance in a single WBGA-96 footprint-making it optimal for thermally constrained, long-lifecycle embedded designs requiring memory subsystem continuity.

Availability

W632GG6KB-12 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging subsystems, and automotive ADAS domain controllers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GG6KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted firmware storage ICs for industrial, automotive, and computing markets.

W632GG6KB-12 TR belongs to Winbond's DDR3 SDRAM product line, engineered for high-reliability embedded systems demanding extended temperature operation, low-power self-refresh, and JEDEC-compliant timing stability across voltage and process variation.

FAQ

What is the maximum clock frequency supported by W632GG6KB-12 TR?

W632GG6KB-12 TR supports a maximum clock frequency of 800 MHz, corresponding to DDR3-1600 data rates (1600 Mb/s per pin). This is validated under JEDEC-specified conditions with CL=11, CWL=7, and tRCD/tRP/tRC = 11-11-11. The device achieves this timing with tCK(AVG) between 1.875 ns and 2.5 ns, and operates reliably across 0°C to 95°C case temperature.

Does W632GG6KB-12 TR support industrial temperature range?

Yes, W632GG6KB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C, meeting extended commercial temperature requirements common in industrial HMI, networking, and automotive ADAS applications. While not qualified to −40°C like the 12I variant, its 95°C upper limit-combined with Auto Self-Refresh (ASR) and robust power-down modes-enables continuous operation in thermally demanding enclosures without derating.

How does the ZQ calibration function work on W632GG6KB-12 TR?

W632GG6KB-12 TR performs ZQ calibration by referencing an external 240 Ω ±1 % resistor connected to the ZQ pin. During calibration, the device adjusts its internal output driver and ODT impedances to match this reference, ensuring ±1 % accuracy across voltage and temperature. Calibration is initiated via ZQCL command and can be repeated periodically or after major voltage/temperature shifts to maintain signal integrity.

What is the role of the RESET# pin on W632GG6KB-12 TR?

The RESET# pin on W632GG6KB-12 TR provides asynchronous reset functionality essential for power-up initialization and system recovery. When asserted LOW, it forces the SDRAM into a known state, clears internal registers, and initiates the power-on sequence-including DLL locking and mode register loading-without requiring stable clocks. This ensures deterministic startup behavior in embedded systems with variable power ramp profiles.

Can W632GG6KB-12 TR operate with DDR3L (1.35 V) supplies?

No, W632GG6KB-12 TR requires VDD/VDDQ = 1.5 V ± 0.075 V and is not compatible with DDR3L's 1.35 V supply specification. Its I/O interface is SSTL_15-compliant, and operation outside the 1.425–1.575 V range may cause timing violations, data corruption, or failure to initialize. For DDR3L designs, consider Winbond's W632GG6KB-125 variant or alternate DDR3L-qualified parts.

W632GG6KB-12 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W632GG6KB-12 TR FAQ

1.How can I place an order for W632GG6KB-12 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6KB-12 TR reliable?

The price and inventory of W632GG6KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB-12 TR is usually 5 days.

3.What payment methods are accepted for W632GG6KB-12 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB-12 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6KB-12 TR?

W632GG6KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6KB-12 TR?

For technical support, including W632GG6KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB-12 TR requirements.

6.How does Aetrix verify that W632GG6KB-12 TR is sourced from the original manufacturer or authorized distributors?

All W632GG6KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB-12 TR meets industry standards.

7.What is the process for return or replacement of W632GG6KB-12 TR?

All W632GG6KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB-12 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6KB-12 TR part is unused and in its original packaging.

Return procedure for W632GG6KB-12 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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