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Winbond Electronics Corporation W632GG6KB-15 TR
- Part No.:
- W632GG6KB-15 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W632GG6KB-15 TR.pdf
- Description:
- IC DRAM 2GBIT PAR 96WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,874
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Product details
Overview
W632GG6KB-15 TR from Winbond is a 2Gb (256M × 8) DDR3 SDRAM organized as 16M words × 8 banks × 16 bits, operating at DDR3-1333 speed (667 MHz clock, 9-9-9 timing), with 1.5V VDD/VDDQ supply, SSTL_15 interface, and WBGA-96 (9×13 mm²) package. It supports CAS Latency 6–10, programmable CWL, on-die termination (ODT), ZQ calibration, and industrial-grade operation up to 95°C - deployed in embedded computing, network edge devices, and industrial HMIs requiring reliable high-bandwidth memory.
For engineers reviewing the W632GG6KB-15 TR datasheet, W632GG6KB-15 TR pinout, W632GG6KB-15 TR application, or W632GG6KB-15 TR equivalent, this page delivers verified DDR3-1333 timing parameters, ball-mapped I/O roles, ODT configuration modes, power-down behavior, and JEDEC-compliant initialization sequences - critical for signal integrity validation, layout verification, and thermal-aware system integration.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# and DQS/DQS# signaling, and DLL-based data-to-clock alignment. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths of 8 (BL8) or 4 (BC4), and bi-directional strobe edge/center alignment per JEDEC JESD79-3F.
Key operational features include asynchronous RESET#, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), write leveling, multi-purpose register (MPR) calibration pattern readout, and ZQ calibration using an external 240Ω resistor. All control inputs are sampled at the CK/CK# crossing point; data and DM are referenced to both edges of DQS/DQS#.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8), organized as 16M words × 8 banks × 16 bits |
| Data Rate / Speed Grade | DDR3-1333 (1333 Mb/s/pin), 667 MHz fCK, 9-9-9 CL-tRCD-tRP timing |
| Supply Voltage | VDD = VDDQ = 1.5 V ± 0.075 V - requires tight regulation for stable tREFI and IDD stability |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial extended range); full JEDEC spec compliance at 85°C, 3.9 µs refresh at 95°C with ASR enabled |
| CAS Latency (CL) | Programmable CL = 6, 7, 8, 9, 10 - determines tAA min (13.5 ns at CL=9), directly impacts read access latency |
| CAS Write Latency (CWL) | Programmable CWL = 5, 6, 7 - sets write latency WL = AL + CWL; CWL=7 required for CL=9 at DDR3-1333 |
| On-Die Termination | Configurable Rtt_Nom = 60/120/240 Ω and Rtt_WR = 60/120 Ω via MR1/MR2 - enables dynamic impedance matching during writes |
| Package | WBGA-96, 9 mm × 13 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free |
Pinout & Package
W632GG6KB-15 TR uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm pitch, 9 mm × 13 mm footprint, and standard DDR3 ball assignment per JEDEC MO-270CA. Power and reference pins are distributed across the array to minimize noise coupling; VREFCA and VREFDQ are dedicated analog references for command/address and data I/O respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Edge-sensitive sampling point for all commands and addresses; defines system timing reference |
| CKE | Clock Enable | Asynchronous control for power-down entry/exit; must remain HIGH during active reads/writes |
| CS# | Chip Select | Active-low command gate; enables command decoding only when asserted with valid address/control |
| RAS#, CAS#, WE# | Command Inputs | Define ACT, READ, WRITE, PRE, REF, MRS operations in conjunction with BA and address bus |
| BA[2:0] | Bank Address | Selects one of eight internal banks for concurrent activation; enables bank-interleaved bandwidth |
| A[13:0], A10/AP | Row/Column Address | A0–A13 for row/column selection; A10 doubles as auto-precharge enable (AP) |
| DQ[15:0], DQU[7:0], DQL[7:0] | Data I/O | 16-bit bidirectional data bus split into upper/lower bytes; supports BL8/BC4 bursts |
| DQS / DQS#, DQSU / DQSU#, DQSL / DQSL# | Differential Strobe | Source-synchronous strobes - center-aligned on write, edge-aligned on read; critical for timing closure |
| DMU / DML | Data Mask | Byte-level write masking for upper/lower 8-bit lanes; suppresses masked data during write cycles |
| ODT | On-Die Termination Control | Registered input enabling/disabling Rtt_Nom; synchronous with CKE domain, not affected by reset |
| RESET# | Asynchronous Reset | Forces device into known state during power-up initialization; must be held LOW until VDD/VDDQ stabilize |
| ZQ | ZQ Calibration Reference | Connects to external 240Ω ±1% resistor to ground; calibrates output driver and ODT impedances |
| VREFCA / VREFDQ | Analog Reference Inputs | VREFCA = 0.5×VDD for CA inputs; VREFDQ = 0.5×VDDQ for DQ/DQS inputs - must be stable before initialization |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5, 6, 7 - enables precise write timing alignment across DDR3-1333/1600/1866 speeds without changing CL |
| Dynamic On-Die Termination (Rtt_WR) | Switches ODT resistance during write bursts only - reduces standby power while maintaining signal integrity on DQ/DQS lines |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew calibration - essential for timing margin recovery in high-speed PCB layouts with trace length mismatch |
| Multi-Purpose Register (MPR) | Reads fixed calibration pattern (0x00000000) via DQ bus - used for system-level timing margin testing and eye diagram validation |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts IDD6 from 19 mA to ~12 mA in memory-constrained embedded applications |
| ZQ Calibration | One-time or periodic calibration using external 240Ω resistor - corrects VDD/VDDQ and temperature drift in output driver and ODT impedance (±5% accuracy) |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Touch-enabled factory-floor HMIs running real-time Linux with GUI rendering and local data logging. IC Role / Device Role / Timing Role: Primary system memory buffering video frame buffers, UI assets, and firmware execution code with low-latency random access. Use Value: DDR3-1333 speed and 9-9-9 timing ensure <15 ns tAA access to display LUTs and sensor history buffers, while PASR extends uptime in fanless enclosures. |
Use Scenario: Layer-3 packet forwarding engines in compact SD-WAN appliances handling 1 Gbps encrypted traffic. IC Role / Device Role / Timing Role: Packet buffer memory interfacing with dual-core ARM Cortex-A9 SoC via 16-bit DDR3 bus. Use Value: Programmable ODT and write leveling maintain signal integrity across 4-layer PCBs with >40 mm DQ trace lengths, reducing bit error rate under thermal stress. |
| Medical Imaging Terminals | Automated Test Equipment (ATE) |
Use Scenario: Portable ultrasound terminals acquiring and preprocessing RF echo data before transmission to cloud servers. IC Role / Device Role / Timing Role: High-throughput frame store for real-time beamforming and DICOM preview generation. Use Value: BL8 burst mode delivers 128-byte cache-line transfers at 1.07 GB/s, meeting 30 fps 1080p display bandwidth requirements within 1.5V power envelope. |
Use Scenario: Modular PXIe-based test platforms performing high-speed digital pattern generation and capture at 200+ MHz. IC Role / Device Role / Timing Role: Pattern memory for stimulus/response storage synchronized to FPGA-controlled DDR3 PHY. Use Value: Asynchronous RESET# and deterministic power-down exit (<500 ns) enable rapid test sequence reinitialization without host CPU intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:A | Same density (2Gb), 96-ball FBGA, DDR3L-1600 (1.35V), CL=11 @ 800 MHz; no industrial temp support above 85°C | Lower voltage reduces power but requires separate 1.35V rail; lacks 95°C extended case rating | Choose for battery-powered or thermally constrained designs where 1.35V supply exists and 95°C operation is unnecessary. |
| IS43TR16256B-15KBL | 2Gb DDR3, 96-ball WBGA, DDR3-1333 (667 MHz), CL=9, 1.5V; supports -40°C to 105°C, but higher IDD0 (110 mA vs. 100 mA) | Broadened temperature range enables deployment in automotive under-hood telemetry, but increases idle power draw | Choose when ambient exceeds 95°C and JEDEC industrial spec compliance is mandatory - verify thermal derating of tREFI. |
Compared with MT41K256M16HA-125:A and IS43TR16256B-15KBL, W632GG6KB-15 TR uniquely balances 95°C commercial-extended operation, 100 mA IDD0 at DDR3-1333, and WBGA-96 mechanical compatibility - making it optimal for space-constrained industrial controllers where 1.5V infrastructure and thermal headroom coexist.
Availability
W632GG6KB-15 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1333 performance.
Supply support for W632GG6KB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W632GG6KB-15 TR belongs to Winbond's W632GG6KB DDR3 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR3 operation without voltage scaling complexity.
FAQ
What is the maximum operating frequency supported by W632GG6KB-15 TR?
W632GG6KB-15 TR is rated for DDR3-1333 operation, corresponding to a maximum clock frequency (fCK) of 667 MHz and data transfer rate of 1333 MT/s. Its AC timing specifications - including tAA = 13.5 ns (min), tRCD = 13.5 ns (min), and tRP = 13.5 ns (min) - are guaranteed across 0°C to 95°C case temperature when configured with CL=9 and CWL=7. Higher frequencies require faster speed grades (-12 or -11).
Does W632GG6KB-15 TR support industrial temperature range?
W632GG6KB-15 TR is specified for 0°C ≤ TCASE ≤ 95°C, with full JEDEC AC/DC compliance up to 85°C. At 85°C < TCASE ≤ 95°C, it requires Auto Self-Refresh (ASR) mode enabled (MR2[7:6] = 10b) and doubled refresh rate (tREFI = 3.9 µS). The -15I variant (W632GG6KB15I) explicitly supports -40°C to 95°C; the -15 grade does not.
How is on-die termination (ODT) configured on W632GG6KB-15 TR?
ODT on W632GG6KB-15 TR is controlled via the ODT pin and programmed through Mode Registers MR1 and MR2. MR1 sets Rtt_Nom (60/120/240 Ω) for read termination; MR2 configures Rtt_WR (60/120 Ω) for dynamic write termination. The ODT pin must be registered HIGH to activate termination on DQ, DQS, DM, and related signals - no pull-up/down resistors needed externally.
What is the purpose of the ZQ pin on W632GG6KB-15 TR?
The ZQ pin on W632GG6KB-15 TR connects to a precision 240Ω ±1% resistor to ground and enables ZQ calibration - a one-time or periodic process that adjusts internal output driver and ODT impedances to compensate for VDD/VDDQ and temperature variations. Calibration ensures ±5% impedance accuracy for signal integrity across voltage and thermal ranges.
Can W632GG6KB-15 TR be used with a DDR3L controller?
No - W632GG6KB-15 TR is a standard DDR3 (1.5V) device, not DDR3L (1.35V). Its VDD/VDDQ specification is 1.5V ± 0.075V (1.425V–1.575V), and it does not guarantee operation below 1.425V. Interfacing with a DDR3L-only controller risks setup/hold violations, excessive IDD, or initialization failure. Use only with 1.5V-compatible memory controllers.
W632GG6KB-15 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W632GG6KB-15 TR FAQ
1.How can I place an order for W632GG6KB-15 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG6KB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG6KB-15 TR reliable?
The price and inventory of W632GG6KB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB-15 TR is usually 5 days.
3.What payment methods are accepted for W632GG6KB-15 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB-15 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG6KB-15 TR?
W632GG6KB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG6KB-15 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG6KB-15 TR?
For technical support, including W632GG6KB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB-15 TR requirements.
6.How does Aetrix verify that W632GG6KB-15 TR is sourced from the original manufacturer or authorized distributors?
All W632GG6KB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB-15 TR meets industry standards.
7.What is the process for return or replacement of W632GG6KB-15 TR?
All W632GG6KB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB-15 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG6KB-15 TR part is unused and in its original packaging.
Return procedure for W632GG6KB-15 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG6KB-15 TR Tags
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