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Winbond Electronics Corporation W632GG6KB-18

Part No.:
W632GG6KB-18
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW632GG6KB-18.pdf
Description:
IC DRAM 2GBIT PAR 96WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,059

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Product details

Overview

W632GG6KB-18 from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-1866 speed grade (-11), CAS Latency 13, tRCD/tRP = 13 ns, and 1.5V VDD/VDDQ supply. It features eight internal banks, 8-bit prefetch, programmable CWL, ZQ calibration, and asynchronous RESET# for power-up initialization in memory subsystems of embedded controllers and industrial SoC platforms.

For engineers reviewing the W632GG6KB-18 datasheet, W632GG6KB-18 pinout, W632GG6KB-18 application, or W632GG6KB-18 equivalent, this page delivers verified DDR3 timing parameters, ball-level I/O mapping, ODT configuration options, and JEDEC-compliant power-down modes - all critical for signal integrity validation, PCB layout, and memory controller register programming.

Technical Context

The W632GG6KB-18 implements a source-synchronous interface with differential CK/CK# and DQS/DQS# pairs, where inputs are latched at the crossing of CK rising and CK# falling edges. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 933 MHz operation (tCK = 1.07 ns min) under DDR3-1866 timing constraints.

It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, dynamic ODT (Rtt_WR), and multi-purpose register (MPR) readout for system-level timing calibration. The device uses SSTL_15 I/O standard and includes ZQ calibration for output driver and ODT impedance tuning via external 240Ω resistor.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16,777,216 words × 8 banks × 16 bits)
Data Rate1866 Mb/sec/pin (DDR3-1866, fCKMAX = 933 MHz)
CAS Latency (CL)13 (tAA = 13.91 ns min, supports CL 6/8/10/13)
CAS Write Latency (CWL)9 (tCK(AVG) = 1.07–1.25 ns range)
tRCD / tRP13 ns (JEDEC DDR3-1866 13-13-13 timing bin)
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V (SSTL_15 compatible)
Operating Temp0°C ≤ TCASE ≤ 95°C (standard grade, non-industrial)
PackageWBGA-96 (9 mm × 13 mm, RoHS-compliant, lead-free)

Pinout & Package

W632GG6KB-18 is packaged in a 96-ball WBGA (9 mm × 13 mm) with 0.8 mm ball pitch, compliant with JEDEC MO-273B. Ball assignment follows standard DDR3 SDRAM layout with dedicated VDDQ, VSSQ, VREFCA, VREFDQ, ZQ, and ODT pins.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputLatches all command/address inputs at crossing point; defines system timing reference
DQS / DQS#Differential data strobeSource-synchronous edge-aligned read / center-aligned write strobe; enables DDR timing margining
ODTOn-die termination controlEnables programmable termination on DQ/DQS/DM lines during reads/writes to suppress reflections
RESET#Asynchronous reset inputTriggers power-up initialization sequence and resets internal state without requiring stable clocks
ZQCalibration reference terminalConnects to external 240Ω ±1% resistor to ground for factory-trimmed output driver and ODT impedance tuning
VREFCA / VREFDQReference voltage inputsProvide mid-supply reference for command/address (VREFCA) and data (VREFDQ) receivers; must remain stable during all operations

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Enables on-the-fly termination switching during write bursts to optimize signal integrity without external resistors
Write leveling supportAllows memory controller to calibrate DQS-to-CK skew per byte lane using MPR read pattern and feedback loop
Multi-purpose register (MPR)Provides predefined calibration bit sequence for system-level timing margin analysis and eye diagram optimization
Programmable CWLPermits matching write latency to operating frequency (CWL = 9 at DDR3-1866), reducing write turnaround overhead
Partial array self-refresh (PASR)Reduces IDD6 current by refreshing only active banks, extending battery life in portable applications
Posted CAS with ALImproves bus efficiency by decoupling command issuance from data availability; RL = AL + CL allows flexible scheduling

Applications

Industrial HMI ControllerNetwork Edge Router

Use Scenario: Real-time display rendering and local data buffering in panel-mounted HMIs with ARM-based SoCs.

IC Role / Device Role / Timing Role: Primary DDR3 memory bank interfacing directly to Cortex-A series memory controller with 16-bit bus width.

Use Value: 13-13-13 timing and 1.07 ns tCK enable deterministic latency for GUI frame buffer access and interrupt-driven I/O handling.

Use Scenario: Packet buffering and forwarding table storage in fanless enterprise edge routers with thermal constraints.

IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting concurrent read/write operations across eight internal banks.

Use Value: Dynamic ODT and write leveling ensure signal integrity at 1866 MT/s over 4-layer PCB traces up to 8 inches long.

Medical Imaging ModuleAutomated Test Equipment

Use Scenario: Raw sensor data capture and preprocessing in ultrasound or digital X-ray modules with FPGA-based pipelines.

IC Role / Device Role / Timing Role: Burst-oriented memory for high-throughput streaming into FPGA DDR3 PHY with precise tRAS/tRC control.

Use Value: 2K-byte page size and tRAS = 34 ns minimize row activation overhead during continuous 128-bit burst transfers.

Use Scenario: Pattern memory for high-speed digital I/O test vectors in ATE systems requiring deterministic timing margins.

IC Role / Device Role / Timing Role: Low-jitter, calibrated memory subsystem synchronized to system clock domain via DLL-locked DQS.

Use Value: MPR readout and ZQ calibration allow factory-grade timing closure verification without external instrumentation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M16HA-125:A2Gb DDR3L (1.35V), -125 speed grade (DDR3L-1600), 96-ball FBGA, supports 0°C–95°CLower voltage reduces power but requires separate VDDQ rail; not pin-compatible due to different ball map and VREFDQ placementSelect when system design targets DDR3L compatibility and lower static power, with board redesign for ballout and voltage regulation.
IS43TR16256B-125KBL2Gb DDR3, -125 speed grade (DDR3-1600), 96-ball WBGA, same package footprint but different pin assignments for ODT/ZQ/VREFSupports identical temperature range but lacks PASR and has fixed CWL; no write leveling modeChoose for cost-sensitive designs where DDR3-1600 bandwidth suffices and advanced calibration features are unnecessary.

Compared with W632GG6KB-18, MT41K256M16HA-125:A offers lower voltage operation at reduced speed, while IS43TR16256B-125KBL matches the WBGA-96 form factor but omits write leveling and PASR-making W632GG6KB-18 the only option supporting full DDR3-1866 timing with system-level calibration capabilities.

Availability

W632GG6KB-18 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3-1866 performance.

Supply support for W632GG6KB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6KB-18 belongs to Winbond's DDR3 SDRAM product line, designed specifically for high-reliability embedded systems demanding JEDEC-compliant timing, extended temperature operation, and advanced signal integrity features like write leveling and dynamic ODT.

FAQ

What speed grade does W632GG6KB-18 correspond to?

W632GG6KB-18 corresponds to the DDR3-1866 speed grade with timing specification 13-13-13 (tRCD/tRP/tRAS = 13 ns). It is rated for operation up to 933 MHz clock frequency (tCK = 1.07 ns minimum), and supports CAS Latency 13 and CAS Write Latency 9. This speed grade is confirmed in the official Winbond datasheet revision A06, section 4 (KEY PARAMETERS).

Does W632GG6KB-18 support industrial temperature range?

No, W632GG6KB-18 is specified for 0°C ≤ TCASE ≤ 95°C, which is the commercial/extended temperature grade-not the industrial -40°C to +95°C range. Industrial variants are designated with "I" suffixes (e.g., W632GG6KB12I or W632GG6KB15I); the -18 suffix indicates DDR3-1866 speed bin but does not imply extended temperature capability.

What is the function of the ZQ pin on W632GG6KB-18?

The ZQ pin on W632GG6KB-18 connects to an external 240Ω ±1% precision resistor to ground and enables factory-trimmed calibration of output driver strength and on-die termination (ODT) impedances. This ZQ calibration ensures consistent 34Ω output drive and selectable ODT values (60Ω/120Ω/150Ω) across voltage and temperature variations, critical for DDR3 signal integrity.

Can W632GG6KB-18 operate with DDR3L voltage levels?

No, W632GG6KB-18 requires VDD/VDDQ = 1.5V ± 0.075V and is not compatible with DDR3L's 1.35V supply. It implements SSTL_15 I/O standard and lacks DDR3L-specific DC characteristics. Using 1.35V will result in undefined behavior, failed initialization, or excessive bit errors. For DDR3L compatibility, consider Winbond's W632GG6KB-125:L series instead.

How is the RESET# pin used during power-up of W632GG6KB-18?

The RESET# pin on W632GG6KB-18 initiates asynchronous power-up initialization: it must be held LOW for ≥200 µs after VDD/VDDQ stabilize and before releasing HIGH, ensuring internal DLL, registers, and mode settings are properly reset. Unlike CKE-controlled entry, RESET# does not require clock stability and is mandatory before issuing any commands - per section 8.2.1 of the Winbond datasheet.

W632GG6KB-18 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tray
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
533 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W632GG6KB-18 FAQ

1.How can I place an order for W632GG6KB-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6KB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6KB-18 reliable?

The price and inventory of W632GG6KB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB-18 is usually 5 days.

3.What payment methods are accepted for W632GG6KB-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6KB-18?

W632GG6KB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6KB-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6KB-18?

For technical support, including W632GG6KB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB-18 requirements.

6.How does Aetrix verify that W632GG6KB-18 is sourced from the original manufacturer or authorized distributors?

All W632GG6KB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB-18 meets industry standards.

7.What is the process for return or replacement of W632GG6KB-18?

All W632GG6KB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6KB-18 part is unused and in its original packaging.

Return procedure for W632GG6KB-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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