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Winbond Electronics Corporation W632GG6MB-09

Name: W632GG6MB-09
Brand: Winbond Electronics Corporation
SKU: W632GG6MB-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GG6MB-09

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GG6MB-09.pdf

Description:: IC DRAM 2GBIT PAR 96VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GG6MB-09 from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-2133 (14-14-14) timing, operating at 1.5 V supply, supporting CAS Latency up to CL=14 and CWL=10, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm). It delivers 2133 MT/s data rates for high-bandwidth memory subsystems in networking infrastructure and industrial control systems.

For engineers reviewing the W632GG6MB-09 datasheet, W632GG6MB-09 pinout, W632GG6MB-09 application, or W632GG6MB-09 equivalent, key selection criteria include DDR3-2133 speed bin compliance, -40°C to +95°C industrial temperature range, VFBGA-96 mechanical compatibility, and support for ZQ calibration, dynamic ODT, and write leveling-critical for signal integrity in dense PCB layouts.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. Its differential clock (CK/CK#) and bi-directional DQS/DQS# strobes support source-synchronous double-data-rate transfers aligned to clock edges.

It supports programmable mode registers (MR0–MR3) for CAS Latency (CL=5–14), CAS Write Latency (CWL=5–10), additive latency (AL=0, CL−1, CL−2), on-die termination (RTT_NOM, RTT_WR), and advanced power management including Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR), and Precharge Power-Down.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16,777,216 words × 8 banks × 16 bits)
Data Rate	2133 MT/s (DDR3-2133, 1066 MHz clock)
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V - matches SSTL_15 I/O standard and enables interoperability with DDR3 controllers
Timing (CL-nRCD-nRP)	14-14-14 - defines minimum tAA (13.09 ns), tRCD (13.09 ns), and tRP (13.09 ns) for reliable high-speed operation
Operating Temperature	0°C ≤ TCASE ≤ 95°C - validated for industrial-grade thermal environments without derating
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height) - surface-mount footprint compatible with automated assembly and thermal vias
Key Features	ZQ calibration, dynamic ODT (Rtt_WR), write leveling, MPR read pattern, and asynchronous RESET# - enable system-level timing calibration and robust signal integrity

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm body size, 0.8 mm ball pitch, and lead-free RoHS-compliant construction. Ball map conforms to JEDEC MO-270DA standard.

Pin/Terminal	Circuit Role	Design Meaning
A1–A14	Address Inputs	Row/column/bank address latched on CK rising edge; A10 controls auto-precharge
BA0–BA2	Bank Address	Selects one of eight internal banks for concurrent operation
CK, CK#	Differential Clock	Edge-triggered command latch point; defines all timing windows (tCK = 0.938 ns min for DDR3-2133)
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; synchronized to DQS/DQS# with center-aligned writes and edge-aligned reads
DQS, DQS#	Differential Data Strobe	Source-synchronous strobe pair; DLL-aligned to CK for precise timing margin control
DM0–DM1	Data Mask	Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses invalid write data without interrupting burst
RESET#	Asynchronous Reset	Active-low initialization trigger; initiates power-up sequence and clears internal state
ODT	On-Die Termination Control	Dynamic enable/disable of RTT_NOM/RTT_WR per MR1/MR2; critical for impedance-matched stub-free routing
WE#, RAS#, CAS#	Command Inputs	Standard DDR3 command encoding (e.g., WE# low + RAS# low + CAS# low = ACTIVE)
VDD, VDDQ, VSS	Power/Ground	Separate core (VDD) and I/O (VDDQ) supplies; decoupling required per JEDEC layout guidelines

Key Features

Feature	Design Value
Programmable CAS Write Latency (CWL)	CWL=10 supported at DDR3-2133 - enables optimal write timing alignment with controller setup/hold margins
Dynamic On-Die Termination (Rtt_WR)	Configurable termination during write bursts only - reduces stub reflections without impacting read signal integrity
ZQ Calibration	One-time or periodic calibration using external 240 Ω resistor - corrects output driver and ODT impedance drift over voltage/temperature
Write Leveling Support	Hardware-assisted DQS-to-CK skew adjustment - eliminates board-level trace length mismatch effects on write capture
Multi-Purpose Register (MPR)	Predefined 128-bit pattern readout via MRS - provides known-good reference for system-level timing margin validation

Applications

Networking Switch Memory	Industrial PLC Main Memory
Use Scenario: High-throughput packet buffering and table lookups in Layer 2/3 Ethernet switches requiring sustained 16 GB/s bandwidth. IC Role / Device Role / Timing Role: Primary DDR3 memory bank interfaced to multi-core network processor; operates at DDR3-2133 with CL=14 to meet tight tRCD/tRP constraints. Use Value: 2133 MT/s data rate and 8-bank concurrency reduce average access latency by >35% versus DDR3-1600, directly improving switch forwarding throughput.	Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: System memory for ARM Cortex-A9-based controller SoC; leverages ASR and PASR to maintain data retention during voltage sags and ambient temperature swings up to 95°C. Use Value: Industrial temperature rating and Auto Self-Refresh ensure uninterrupted operation during brownouts and thermal cycling-eliminating need for external refresh controllers.
Medical Imaging Frame Buffer	Test & Measurement Data Capture
Use Scenario: Temporary storage of high-resolution ultrasound or MRI scan frames prior to compression and transfer to SSD storage. IC Role / Device Role / Timing Role: Burst-oriented frame buffer connected to FPGA-based image acquisition engine; uses BC4 and BL8 modes with DM masking for partial line updates. Use Value: 16-bit bus width and 2K-page size minimize row activation overhead, enabling >92% bus utilization during continuous 12-bit pixel streaming at 120 fps.	Use Scenario: High-fidelity waveform digitization in oscilloscopes and logic analyzers capturing multi-GHz analog signals at 1 GS/s+ sampling rates. IC Role / Device Role / Timing Role: Deep memory buffer for ADC sample storage; relies on write leveling and MPR to calibrate FPGA-to-SDRAM timing across production units. Use Value: Write leveling and MPR pattern reduce timing margin uncertainty to <15 ps, allowing safe operation at maximum DDR3-2133 speed without custom board tuning.

Networking Switch Memory

Industrial PLC Main Memory

Use Scenario: High-throughput packet buffering and table lookups in Layer 2/3 Ethernet switches requiring sustained 16 GB/s bandwidth.

IC Role / Device Role / Timing Role: Primary DDR3 memory bank interfaced to multi-core network processor; operates at DDR3-2133 with CL=14 to meet tight tRCD/tRP constraints.

Use Value: 2133 MT/s data rate and 8-bank concurrency reduce average access latency by >35% versus DDR3-1600, directly improving switch forwarding throughput.

Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: System memory for ARM Cortex-A9-based controller SoC; leverages ASR and PASR to maintain data retention during voltage sags and ambient temperature swings up to 95°C.

Use Value: Industrial temperature rating and Auto Self-Refresh ensure uninterrupted operation during brownouts and thermal cycling-eliminating need for external refresh controllers.

Medical Imaging Frame Buffer

Test & Measurement Data Capture

Use Scenario: Temporary storage of high-resolution ultrasound or MRI scan frames prior to compression and transfer to SSD storage.

IC Role / Device Role / Timing Role: Burst-oriented frame buffer connected to FPGA-based image acquisition engine; uses BC4 and BL8 modes with DM masking for partial line updates.

Use Value: 16-bit bus width and 2K-page size minimize row activation overhead, enabling >92% bus utilization during continuous 12-bit pixel streaming at 120 fps.

Use Scenario: High-fidelity waveform digitization in oscilloscopes and logic analyzers capturing multi-GHz analog signals at 1 GS/s+ sampling rates.

IC Role / Device Role / Timing Role: Deep memory buffer for ADC sample storage; relies on write leveling and MPR to calibrate FPGA-to-SDRAM timing across production units.

Use Value: Write leveling and MPR pattern reduce timing margin uncertainty to <15 ps, allowing safe operation at maximum DDR3-2133 speed without custom board tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M16HA-125:A	DDR3L-1600 (125 MHz), 1.35 V operation, 96-ball FBGA, CL=11	Lower speed and voltage; requires redesigned power delivery and timing constraints	Choose when lower power consumption and cost outweigh peak bandwidth needs.
IS43TR16256B-125KBL	DDR3-1600 (125 MHz), 1.5 V, 96-ball FBGA, CL=11, industrial temp (−40°C to +95°C)	Same package but slower speed grade; lacks write leveling and MPR support	Acceptable for non-critical timing applications where calibration features are not required.

Compared with W632GG6MB-09, MT41K256M16HA-125:A offers lower static power but sacrifices 33% bandwidth and requires voltage rail redesign, while IS43TR16256B-125KBL matches form factor and temperature but omits write leveling-increasing system-level timing validation effort.

Availability

W632GG6MB-09 is available at Aetrix Electronics and suitable for networking infrastructure, industrial control systems, and medical imaging equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant reliability, and advanced calibration features like write leveling and ZQ calibration.

FAQ

What is the maximum data rate supported by the W632GG6MB-09?

The W632GG6MB-09 supports a maximum data rate of 2133 MT/s (megatransfers per second), corresponding to a 1066 MHz clock frequency under DDR3-2133 (14-14-14) timing specifications. This performance is guaranteed across its full industrial temperature range of 0°C to +95°C, with tCK(AVG) as low as 0.938 ns for CL=14/CWL=10 operation. The W632GG6MB-09 achieves this using DLL-aligned DQS-to-CK timing and SSTL_15 I/O signaling.

Does the W632GG6MB-09 support write leveling and how is it implemented?

Yes, the W632GG6MB-09 supports hardware-assisted write leveling per JEDEC DDR3 specification. It uses the DQS/DQS# strobe pair to adjust skew relative to CK/CK# during a dedicated training sequence initiated by the memory controller. The W632GG6MB-09 responds with calibrated delay values stored in internal registers, enabling precise DQS launch timing. This feature is essential for maintaining setup/hold margins in high-speed layouts and is explicitly documented in sections 8.9 and 10.16.4 of the W632GG6MB-09 datasheet.

What package type and ball count does the W632GG6MB-09 use?

The W632GG6MB-09 is packaged in a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with dimensions of 7.5 mm × 13 mm and a thickness of 1.0 mm. It follows JEDEC MO-270DA mechanical standards, uses lead-free solder balls, and complies with RoHS Directive 2011/65/EU. The ball configuration includes dedicated address, command, data, strobe, and power terminals arranged to minimize crosstalk and support controlled-impedance routing.

Can the W632GG6MB-09 operate in extended temperature conditions beyond commercial grade?

Yes, the W632GG6MB-09 is rated for operation from 0°C to +95°C case temperature, qualifying it as an industrial-grade device. Unlike commercial-grade DDR3 parts limited to 0°C to +70°C, this extended range ensures reliable functionality in harsh environments such as factory floors and outdoor telecom cabinets. Thermal validation includes full AC/DC parameter compliance across the range, and the W632GG6MB-09 supports Auto Self-Refresh (ASR) to maintain data retention at elevated temperatures without external intervention.

What are the supported CAS Latency (CL) and CAS Write Latency (CWL) settings for the W632GG6MB-09?

The W632GG6MB-09 supports CAS Latency (CL) settings of 5, 6, 7, 8, 9, 10, 11, 13, and 14, and CAS Write Latency (CWL) settings of 5, 6, 7, 8, 9, and 10. At its rated DDR3-2133 speed, CL=14 and CWL=10 are used, yielding Read Latency (RL) = AL + CL and Write Latency (WL) = AL + CWL, where AL is programmable as 0, CL−1, or CL−2. These values are configured via Mode Registers MR0 and MR2 and are validated per JEDEC JESD79-3F.

W632GG6MB-09 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 1066 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GG6MB-09 FAQ

1.How can I place an order for W632GG6MB-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6MB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6MB-09 reliable?

The price and inventory of W632GG6MB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6MB-09 is usually 5 days.

3.What payment methods are accepted for W632GG6MB-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6MB-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6MB-09?

W632GG6MB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6MB-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6MB-09?

For technical support, including W632GG6MB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6MB-09 requirements.

6.How does Aetrix verify that W632GG6MB-09 is sourced from the original manufacturer or authorized distributors?

All W632GG6MB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6MB-09 meets industry standards.

7.What is the process for return or replacement of W632GG6MB-09?

All W632GG6MB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6MB-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6MB-09 part is unused and in its original packaging.

Return procedure for W632GG6MB-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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