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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W632GG6MB09J

Name: W632GG6MB09J
Brand: Winbond Electronics Corporation
SKU: W632GG6MB09J
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GG6MB09J

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GG6MB09J.pdf

Description:: IC DRAM 2GBIT PAR 96VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GG6MB09J from Winbond Electronics is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM IC operating at DDR3-2133 speed (1066 MHz clock, 14-14-14 CL-tRCD-tRP), with industrial-plus temperature range (–40°C to +105°C), VDD/VDDQ = 1.5V ±0.075V, and SSTL_15 interface - deployed in high-reliability embedded computing, network edge routers, and industrial control systems requiring sustained thermal performance.

For engineers reviewing the W632GG6MB09J datasheet, W632GG6MB09J pinout, W632GG6MB09J application, or W632GG6MB09J equivalent, key selection criteria include its guaranteed operation up to +105°C case temperature, DDR3-2133 timing compliance (14-14-14), on-die termination (ODT) programmability, ZQ calibration support, and VFBGA-96 package compatibility with JEDEC-standard DDR3 memory controllers.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# and DQS/DQS# signaling, and DLL-based alignment of data strobes to clock edges. It supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2) and full JEDEC-compliant command encoding including ACTIVE, PRECHARGE, READ, WRITE, REFRESH, and SELF-REFRESH.

The device integrates asynchronous RESET# for power-up initialization, dynamic ODT (Rtt_WR) for write-time termination control, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane DQ-to-DQS skew compensation - all configurable via mode registers MR0–MR3 and enabled under stable 1.5V supply conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16,777,216 words × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space
Data Rate	2133 MT/s (DDR3-2133), requiring 1066 MHz differential clock input (CK/CK#)
Timing Grade	CL-tRCD-tRP = 14-14-14 at 1066 MHz, defining minimum read latency, row-to-column delay, and precharge time
Operating Temp	–40°C ≤ TCASE ≤ +105°C (industrial-plus grade), mandating doubled auto-refresh rate (tREFI = 3.9 µs)
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V, compatible with standard DDR3 power delivery networks
Interface Standard	SSTL_15 I/O interface with differential clock/strobe inputs and bidirectional DQ/DQS pairs
Package	VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height), RoHS-compliant, lead-free

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch, RoHS-compliant, lead-free construction. Ball map conforms to JEDEC MO-273B standard for DDR3 SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A1	VDD	Core power supply (1.5 V), decoupling required per JEDEC layout guidelines
A2	DQ0	Data I/O bit 0, bidirectional, SSTL_15 compliant, referenced to DQS0/DQS0#
A3	DQ1	Data I/O bit 1, bidirectional, matched length routing critical for signal integrity
A4	DQ2	Data I/O bit 2, part of lower-byte DQ group (DQ0–DQ7)
A5	DQ3	Data I/O bit 3, supports burst chop (BC4) and full burst (BL8) modes
A6	DQ4	Data I/O bit 4, synchronized to DQS0/DQS0# rising/falling edges
A7	DQ5	Data I/O bit 5, requires controlled impedance (±10%) PCB trace design
A8	DQ6	Data I/O bit 6, supports write masking (DM) and dynamic ODT activation
A9	DQ7	Data I/O bit 7, LSB of lower-byte DQ bus; used in 16-bit wide x8 configuration
B1	VDDQ	I/O power supply (1.5 V), separate from core VDD, requires dedicated decoupling
B2	DQS0	Differential data strobe pair (DQS0/DQS0#) for DQ0–DQ7, center-aligned on write, edge-aligned on read
B3	DQS0#	Inverted strobe complement for DQS0, routed as matched-length differential pair
B4	DM0	Data mask for DQ0–DQ7, active-high, sampled on DQS0 rising edge during write
B5	CK	Differential clock input (non-inverted), latches all commands and addresses at cross-point with CK#
B6	CK#	Differential clock input (inverted), defines sampling point for all address/command inputs
B7	RESET#	Asynchronous active-low reset, initiates power-up initialization sequence and mode register reset
B8	ODT	On-die termination control input, enables/disables Rtt_NOM (120 Ω) or Rtt_WR (60 Ω) per MR1/MR2 settings
B9	WE#	Write enable command input, active-low, sampled on CK rising edge to initiate write operations
C1	VSS	Digital ground reference, multiple VSS balls required for low-inductance return path
C2	CS#	Chip select input, active-low, enables command decoding when asserted with valid address
C3	RAS#	Row address strobe, active-low, combined with CAS# and WE# to encode ACTIVATE, PRECHARGE, REFRESH
C4	CAS#	Column address strobe, active-low, used with RAS# and WE# for command decode and read/write initiation
C5	A0–A12	Address inputs (13-bit), multiplexed for row/column/bank address; A10 controls auto-precharge
C6	BA0–BA2	Bank address inputs (3-bit), select one of eight internal banks for concurrent operation
C7	TDQS#	Termination data strobe complement, used only in x4/x8 configurations with TDQS functionality
C8	ZQ	ZQ calibration reference pin, connected to 240 Ω ±1% external resistor to ground for output driver/ODT tuning
C9	VDDSPD	SPD EEPROM power supply (1.5 V), powers serial presence detect interface if present

Key Features

Feature	Design Value
Programmable CAS Latency (CL)	Supports CL = 5, 6, 7, 8, 9, 10, 11, 13, 14 - allows optimization of read latency vs. timing margin in controller firmware
Dynamic On-Die Termination (Rtt_WR)	Enables 60 Ω termination during writes only, reducing stub reflections and improving write eye margins without affecting read paths
ZQ Calibration	Uses external 240 Ω resistor on ZQ pin to calibrate output driver strength and ODT values across voltage/temperature, ensuring consistent signal integrity
Multi-Purpose Register (MPR)	Provides predefined read pattern for system-level timing calibration, supporting write leveling and DQ-to-DQS skew measurement
Industrial-Plus Temperature Range	Rated for –40°C to +105°C case temperature with mandatory ASR or manual self-refresh mode, eliminating thermal derating in harsh environments

Applications

Industrial Control HMI	Network Edge Router
Use Scenario: Human-machine interface module in PLC cabinets operating continuously at ambient temperatures up to 75°C inside sealed enclosures. IC Role / Device Role / Timing Role: Primary program/data memory for ARM Cortex-A9-based HMI processor, interfaced via 16-bit DDR3 bus with 2133 MT/s bandwidth. Use Value: Guaranteed +105°C operation eliminates need for forced-air cooling; DDR3-2133 throughput supports real-time graphics rendering and multitouch response.	Use Scenario: Packet buffering and forwarding engine in carrier-grade 10G Ethernet edge router deployed in uncontrolled telecom cabinets. IC Role / Device Role / Timing Role: High-bandwidth buffer memory for ASIC-based traffic manager, sustaining burst reads/writes under 100% line-rate load. Use Value: Dynamic ODT and write leveling ensure signal integrity across 12-layer backplane traces; VFBGA-96 footprint enables dense memory stacking.
Medical Imaging Console	Automotive ADAS Domain Controller
Use Scenario: DICOM image display workstation processing 4K ultrasound streams with zero-frame-drop requirements. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated video pipeline, configured with CL=14 and AL=2 for maximum timing margin. Use Value: 14-14-14 timing grade delivers deterministic 13.09 ns tAA, enabling sub-millisecond frame latency; MPR-assisted calibration ensures long-term stability.	Use Scenario: Centralized vision processing unit in L2+ autonomous driving system, operating in vehicle cabin environments up to 85°C. IC Role / Device Role / Timing Role: Shared memory resource for SoC and safety MCU, accessed via AXI interconnect with DDR3 PHY. Use Value: Industrial-plus rating meets AEC-Q100 Grade 3 thermal requirements; ASR mode maintains data retention during extended sleep cycles without host intervention.

Industrial Control HMI

Network Edge Router

Use Scenario: Human-machine interface module in PLC cabinets operating continuously at ambient temperatures up to 75°C inside sealed enclosures.

IC Role / Device Role / Timing Role: Primary program/data memory for ARM Cortex-A9-based HMI processor, interfaced via 16-bit DDR3 bus with 2133 MT/s bandwidth.

Use Value: Guaranteed +105°C operation eliminates need for forced-air cooling; DDR3-2133 throughput supports real-time graphics rendering and multitouch response.

Use Scenario: Packet buffering and forwarding engine in carrier-grade 10G Ethernet edge router deployed in uncontrolled telecom cabinets.

IC Role / Device Role / Timing Role: High-bandwidth buffer memory for ASIC-based traffic manager, sustaining burst reads/writes under 100% line-rate load.

Use Value: Dynamic ODT and write leveling ensure signal integrity across 12-layer backplane traces; VFBGA-96 footprint enables dense memory stacking.

Medical Imaging Console

Automotive ADAS Domain Controller

Use Scenario: DICOM image display workstation processing 4K ultrasound streams with zero-frame-drop requirements.

IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated video pipeline, configured with CL=14 and AL=2 for maximum timing margin.

Use Value: 14-14-14 timing grade delivers deterministic 13.09 ns tAA, enabling sub-millisecond frame latency; MPR-assisted calibration ensures long-term stability.

Use Scenario: Centralized vision processing unit in L2+ autonomous driving system, operating in vehicle cabin environments up to 85°C.

IC Role / Device Role / Timing Role: Shared memory resource for SoC and safety MCU, accessed via AXI interconnect with DDR3 PHY.

Use Value: Industrial-plus rating meets AEC-Q100 Grade 3 thermal requirements; ASR mode maintains data retention during extended sleep cycles without host intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M16HA-125:E	2 Gb DDR3L (1.35 V), DDR3-1600 (11-11-11), –40°C to +95°C, FBGA-96	Lower voltage and speed; lacks +105°C rating and DDR3-2133 capability	Select when system uses DDR3L power rail and does not require >1600 MT/s or >95°C operation
IS43TR16256B-125KBL	2 Gb DDR3, DDR3-1600 (11-11-11), –40°C to +105°C, VFBGA-96	Same temperature rating but limited to DDR3-1600; no DDR3-2133 support or MPR-based write leveling	Choose for cost-sensitive industrial designs where 1600 MT/s suffices and write leveling is handled externally

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GG6MB09J uniquely delivers DDR3-2133 performance at +105°C with integrated MPR and dynamic ODT - making it the only option for thermally constrained, high-throughput embedded systems requiring JEDEC-compliant 2133 MT/s operation without voltage reduction.

Availability

W632GG6MB09J is available at Aetrix Electronics and suitable for industrial control HMI, network edge routers, medical imaging consoles, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and high-speed DDR3 interfaces.

Supply support for W632GG6MB09J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum operating frequency supported by W632GG6MB09J?

W632GG6MB09J supports DDR3-2133 operation at 1066 MHz clock frequency (2133 MT/s data rate), with minimum timing parameters CL-tRCD-tRP = 14-14-14. This speed grade is validated across the full industrial-plus temperature range (–40°C to +105°C) and requires stable 1.5 V ±0.075 V supply rails.

Does W632GG6MB09J support write leveling, and how is it implemented?

Yes, W632GG6MB09J supports write leveling via its Multi-Purpose Register (MPR) and dedicated write leveling mode. The MPR outputs a fixed calibration pattern, and the memory controller adjusts per-lane DQ-to-DQS timing based on feedback - a feature confirmed in Section 8.9 of the datasheet and essential for reliable high-speed writes.

What is the purpose of the ZQ pin on W632GG6MB09J, and what external component is required?

The ZQ pin on W632GG6MB09J connects to a 240 Ω ±1% external precision resistor to ground, enabling factory and runtime calibration of output driver strength and on-die termination (ODT) values. This ZQ calibration ensures consistent signal integrity across voltage and temperature variations, as specified in Section 8.18 of the datasheet.

How does W632GG6MB09J handle refresh at +105°C case temperature?

At +105°C case temperature, W632GG6MB09J requires doubled auto-refresh frequency (tREFI = 3.9 µs instead of 7.8 µs). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 = 1b, or by using Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b, A7 = 1b), both explicitly defined in Section 4 notes.

Is W632GG6MB09J pin-compatible with other Winbond DDR3 SDRAMs in the same VFBGA-96 package?

W632GG6MB09J shares the same VFBGA-96 mechanical footprint and ball assignment as other members of the W632GG6MB family (e.g., W632GG6MB-11, W632GG6MB11J), including identical power, ground, address, command, data, and strobe ball positions - enabling drop-in replacement within the same speed/temperature grade group.

W632GG6MB09J Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 1.067 GHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: -40°C ~ 105°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GG6MB09J FAQ

1.How can I place an order for W632GG6MB09J through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6MB09J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6MB09J reliable?

The price and inventory of W632GG6MB09J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6MB09J is usually 5 days.

3.What payment methods are accepted for W632GG6MB09J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6MB09J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6MB09J?

W632GG6MB09J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6MB09J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6MB09J?

For technical support, including W632GG6MB09J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6MB09J requirements.

6.How does Aetrix verify that W632GG6MB09J is sourced from the original manufacturer or authorized distributors?

All W632GG6MB09J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6MB09J meets industry standards.

7.What is the process for return or replacement of W632GG6MB09J?

All W632GG6MB09J units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6MB09J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6MB09J part is unused and in its original packaging.

Return procedure for W632GG6MB09J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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