Winbond Electronics Corporation W632GG6MB-11

Overview

W632GG6MB-11 from Winbond is a 2Gb (256M × 8) DDR3 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5V supply, and rated for 0°C to 95°C case temperature. It supports CAS Latency 5–13, programmable CWL, ZQ calibration, and on-die termination for high-speed memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W632GG6MB-11 datasheet, W632GG6MB-11 pinout, W632GG6MB-11 application, or W632GG6MB-11 equivalent, key selection criteria include its DDR3-1866 speed bin, VFBGA-96 package compatibility, SSTL_15 interface compliance, and support for write leveling, dynamic ODT, and partial array self-refresh in thermally constrained designs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# clocking and bi-directional DQS/DQS# strobes enable source-synchronous double-data-rate transfers up to 1866 MT/s, while DLL alignment ensures precise DQ-DQS timing relative to clock edges.

Command decoding occurs on every rising edge of CK, with all control/address inputs sampled at the CK–CK# crosspoint. The device supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst chop (BC4), and interleaved/nibble-sequential read ordering - all configurable via mode registers MR0–MR3.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm body, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-273B standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:A and K4B2G1646F-BYMA, the W632GG6MB-11 offers guaranteed 0°C–95°C operation with full DDR3-1866 timing compliance, making it optimal for industrial systems requiring thermal robustness without voltage scaling trade-offs.

Availability

W632GG6MB-11 is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging systems, network edge routers, and automotive ADAS modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant reliability, and feature-rich memory control (e.g., PASR, write leveling, dynamic ODT).

FAQ

What is the maximum data rate supported by the W632GG6MB-11?

The W632GG6MB-11 supports DDR3-1866 operation at 933 MHz clock frequency, delivering 1866 megatransfers per second. This is confirmed by its -11 speed grade designation and compliance with JEDEC DDR3-1866 (13-13-13) timing specifications, including tAA, tRCD, and tRP minima of 13.91 ns each.

Does the W632GG6MB-11 support write leveling and how is it implemented?

Yes, the W632GG6MB-11 supports hardware-assisted write leveling per JEDEC DDR3 specification. It uses the DQS strobe and internal delay-locked loop to adjust DQS-to-CK skew during initialization. The process is initiated via mode register MR1 bit A10 and requires host controller coordination to sample DQS phase offset, ensuring reliable write capture at 1866 MT/s.

What package type and ball count does the W632GG6MB-11 use?

The W632GG6MB-11 uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum height. This matches JEDEC MO-273B mechanical standard and is fully compatible with standard DDR3 SDRAM PCB footprints.

Can the W632GG6MB-11 operate at temperatures above 85°C?

Yes, the W632GG6MB-11 is rated for 0°C ≤ TCASE ≤ 95°C operation. At temperatures above 85°C, it requires doubled auto-refresh frequency (tREFI = 3.9 µs) and must use either Manual Self-Refresh with Extended Temperature Range (MR2 A6=0, A7=1) or Auto Self-Refresh (ASR) mode (MR2 A6=1) to maintain data retention.

What termination options are available on the W632GG6MB-11 for signal integrity?

The W632GG6MB-11 provides programmable on-die termination (ODT) with synchronous and dynamic modes. RTT values of 75 Ω, 150 Ω, and 50 Ω are selectable via MR1/MR2 for DQ/DQS/DM lines. Dynamic ODT (Rtt_WR) activates termination only during write operations, reducing noise on read paths while maintaining clean write waveforms.