Winbond Electronics Corporation W632GG6MB11I

Overview

W632GG6MB11I from Winbond is a 2 Gbit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 100% industrial temperature range (–40°C to +95°C), and VDD/VDDQ = 1.5 V ± 75 mV. It serves as main memory in embedded computing, network infrastructure, and industrial control systems requiring high-bandwidth, low-latency synchronous DRAM.

For engineers reviewing the W632GG6MB11I datasheet, W632GG6MB11I pinout, W632GG6MB11I application, or W632GG6MB11I equivalent, key selection criteria include its industrial-grade thermal rating, DDR3-1866 timing compliance (tRCD/tRP/tRC = 13.91 ns), programmable CWL (5–7), ZQ calibration support, and VFBGA-96 package compatibility with JEDEC-standard SSTL_15 I/O interface.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) signaling. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in high-speed memory controllers.

Functional features include asynchronous RESET#, on-die termination (ODT) with programmable RTT values (60/120/40 Ω), dynamic ODT (Rtt_WR), write leveling, multi-purpose register (MPR) for system-level timing calibration, and partial array self-refresh (PASR) for power optimization in idle bank subsets.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with ball pitch of 0.8 mm, compliant with JEDEC MO-270AB standard. Ball assignment follows standard DDR3 SDRAM layout for address, command, data, strobe, and power/ground distribution.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16256B-125KBL, W632GG6MB11I delivers 16.5% higher bandwidth and guaranteed operation at –40°C; versus MT41K256M16HA-125:E, it avoids voltage migration and layout changes but trades density for drop-in compatibility in legacy DDR3-1866 designs.

Availability

W632GG6MB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6MB series targets high-reliability DDR3 applications demanding industrial temperature operation, advanced power management (PASR/ASR), and JEDEC-compliant signal integrity features like ZQ calibration and write leveling.

FAQ

What is the maximum clock frequency supported by W632GG6MB11I?

W632GG6MB11I supports a maximum clock frequency of 933 MHz, corresponding to DDR3-1866 operation (1866 MT/s). This is validated under industrial temperature conditions (–40°C to +95°C) with tRCD/tRP/tRC = 13.91 ns minimum and CL = 13. The device also supports down-binned operation at lower frequencies with reduced CAS latencies, subject to SPD programming compliance.

Does W632GG6MB11I support on-die termination (ODT)?

Yes, W632GG6MB11I supports programmable on-die termination with three nominal values (60 Ω, 120 Ω, 40 Ω) via mode registers MR1 and MR2. It implements both synchronous ODT (for reads) and dynamic ODT (Rtt_WR) activated during write bursts. ODT is calibrated using the ZQ pin and an external 240 Ω ±1% reference resistor connected to VSSQ.

What package type and footprint does W632GG6MB11I use?

W632GG6MB11I uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It complies with JEDEC MO-270AB and is RoHS-compliant and lead-free. The ball map matches standard DDR3 SDRAM layouts, enabling direct replacement in existing VFBGA-96 DDR3 footprints designed for 16-bit x16 configurations.

How does W632GG6MB11I handle refresh at elevated temperatures?

At case temperatures above +85°C, W632GG6MB11I requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 or by entering Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0, A7 = 1). Both methods are fully supported and validated for operation up to +95°C.

Is W632GG6MB11I compatible with standard DDR3 memory controllers?

Yes, W632GG6MB11I is fully JEDEC-compliant with DDR3 SDRAM Standard (JESD79-3F) and interoperable with industry-standard DDR3 memory controllers. It supports all mandatory DDR3 features including posted CAS, additive latency, write leveling, MPR, and ZQ calibration. No controller firmware modifications are required beyond standard DDR3 initialization sequences.