Winbond Electronics Corporation W632GG6MB-11 TR

Overview

W632GG6MB-11 TR from Winbond is a 2G-bit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 11, or 10. It features on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for reliable memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W632GG6MB-11 TR datasheet, W632GG6MB-11 TR pinout, W632GG6MB-11 TR application, or W632GG6MB-11 TR equivalent, key selection criteria include its VFBGA-96 package, SSTL_15 interface compliance, -40°C to 95°C industrial temperature range, and support for dynamic ODT, write leveling, and multi-purpose register (MPR)-based timing calibration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# and DQS/DQS# interfaces ensure source-synchronous data capture, while DLL alignment maintains timing integrity across process/voltage/temperature variations.

Command decoding occurs on every rising edge of CK, with read/write bursts synchronized to both edges of DQS. Programmable mode registers (MR0–MR3) configure CAS latency, additive latency, CWL, PASR, ASR, and ODT impedance values-enabling precise system-level timing control and power optimization.

Key Specifications

Pinout & Package

VFBGA-96 package with 0.8 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Ball layout follows JEDEC MO-273 standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GG6MB-11 TR offers identical DDR3-1866 performance and industrial temperature range but with Winbond's optimized ZQ calibration algorithm and broader CWL/CL flexibility-making it ideal for systems requiring fine-grained timing adaptation without voltage reduction or automotive certification overhead.

Availability

W632GG6MB-11 TR is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging systems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty DRAM, flash memory, and microcontrollers since 1987.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding robust operation from -40°C to 95°C with JEDEC-compliant timing, low-power self-refresh, and advanced signal integrity features.

FAQ

What is the maximum operating frequency supported by W632GG6MB-11 TR?

The W632GG6MB-11 TR supports DDR3-1866 operation with a maximum clock frequency of 933 MHz (tCK = 1.07 ns minimum). This speed grade is validated for full JEDEC AC/DC specifications across its rated industrial temperature range of -40°C to 95°C. The device achieves this using CL13, tRCD/tRP = 13.91 ns, and tRC = 47.91 ns timing parameters.

Does W632GG6MB-11 TR support on-die termination (ODT) and how is it configured?

Yes, W632GG6MB-11 TR supports programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals. ODT is configured via MR1 (RTT_NOM) and MR2 (RTT_WR) mode registers, offering selectable impedances including 75 Ω, 150 Ω, and 50 Ω. Dynamic ODT (Rtt_WR) activates only during write operations to improve signal integrity without affecting read paths.

What package type and ball count does W632GG6MB-11 TR use?

W632GG6MB-11 TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. It complies with JEDEC MO-273 and is RoHS-compliant with lead-free finish. The 96-ball layout includes dedicated DQ, DQS, address, command, and power/ground terminals optimized for DDR3 routing.

How does W632GG6MB-11 TR handle temperature-dependent refresh requirements?

W632GG6MB-11 TR adjusts refresh interval based on case temperature: tREFI = 7.8 µs at 0–85°C, and 3.9 µs at 85–95°C. Above 85°C, the device requires doubled refresh commands (every 32 ms) to maintain data retention. This is managed automatically when Auto Self-Refresh (ASR) is enabled via MR2 bit A6, or manually in Self-Refresh mode.

Can W632GG6MB-11 TR be used in systems requiring write leveling and MPR-based calibration?

Yes, W632GG6MB-11 TR fully supports write leveling and Multi-Purpose Register (MPR) functionality. Write leveling uses the MRS command to enter a special mode where DQS phase is adjusted relative to CK, correcting board-level skew. The MPR outputs a fixed 128-bit pattern for system-level timing validation and DQ/DQS eye diagram analysis.