Winbond Electronics Corporation W632GG6MB-12

Overview

W632GG6MB-12 from Winbond Electronics is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with 1.5V VDD/VDDQ supply, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height) for high-density memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W632GG6MB-12 datasheet, W632GG6MB-12 pinout, W632GG6MB-12 application, or W632GG6MB-12 equivalent, key selection considerations include its DDR3-1600 speed bin, CAS Latency support (CL = 5–11), programmable CWL (5–8), on-die termination (ODT), ZQ calibration, and industrial-grade 0°C to 95°C case temperature operation.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# signaling, and DLL-based alignment of data strobes to clock edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4).

Functional features include asynchronous RESET#, multi-purpose register (MPR) for system timing calibration, write leveling for DQ-DQS skew compensation, dynamic ODT (Rtt_WR), and partial array self-refresh (PASR). Power management includes precharged and active power-down modes, with tREFI refresh intervals configurable per temperature range.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; lead-free, RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GG6MB-12 provides unique value through integrated PASR/ASR for thermal-aware refresh, dynamic ODT for clean signal integrity without external resistors, and MPR-based timing validation-features absent in both alternatives.

Availability

W632GG6MB-12 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, automotive ADAS, and network infrastructure applications requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1600 performance.

Supply support for W632GG6MB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with over 30 years of foundry-partnered manufacturing experience.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications in harsh thermal environments and long-lifecycle deployments.

FAQ

What is the maximum clock frequency supported by the W632GG6MB-12?

The W632GG6MB-12 supports a maximum clock frequency of 800 MHz, corresponding to DDR3-1600 (1600 MT/s) data transfer rate. This is confirmed by its speed grade suffix "-12" and JEDEC-compliant timing parameters including tRCD and tRP minimums of 13.75 ns. The device achieves this performance with CL = 11 and CWL = 8 under 1.5 V supply and 0°C to 95°C case temperature conditions. W632GG6MB-12 does not support DDR3-1866 or higher bins.

Does the W632GG6MB-12 support on-die termination (ODT), and how is it configured?

Yes, the W632GG6MB-12 supports programmable on-die termination (ODT) for DQ, DQS, and DM signals via Mode Register MR1. ODT resistance values (RTT_NOM) are set to RZQ/4 (60 Ω), RZQ/5 (48 Ω), or RZQ/6 (40 Ω) depending on system impedance requirements. It also supports dynamic ODT (Rtt_WR) during WRITE operations, activated by MR2 settings. Configuration is performed through mode register set (MRS) commands after power-up initialization. W632GG6MB-12 requires external 240 Ω ZQ resistor for calibration.

What temperature range is guaranteed for the W632GG6MB-12?

The W632GG6MB-12 is specified for 0°C ≤ TCASE ≤ 95°C operation, with full JEDEC AC and DC parameter compliance across this range. Unlike industrial-plus variants (e.g., W632GG6MB-12J), it does not extend to 105°C. Above 85°C, Auto Self-Refresh (ASR) must be enabled (MR2 A6 = 1) to double refresh frequency and maintain data retention. W632GG6MB-12 does not support operation below 0°C.

How is write leveling implemented on the W632GG6MB-12?

Write leveling on the W632GG6MB-12 is implemented via a dedicated training sequence that adjusts DQS launch delay relative to CK using internal delay-line tuning. The DRAM returns a fixed MPR pattern (0x00000000) during readback, allowing the memory controller to detect optimal DQS-to-CK phase alignment. This process compensates for board-level skew between clock and strobe nets. W632GG6MB-12 requires MPR activation (MRS to MR3) and proper ZQ calibration before write leveling begins.

Can the W632GG6MB-12 operate with CAS Latency less than 11 at 800 MHz?

Yes, the W632GG6MB-12 supports CAS Latency settings from CL = 5 to CL = 11 at 800 MHz, as documented in its Supported CL Settings table. Lower CL values (e.g., CL = 7 or CL = 8) reduce read latency but require stricter tAA/tRCD/tRP timing margins (e.g., 13.125 ns minimum for CL = 7). These settings are programmed via MR0 and must be matched with corresponding SPD values. W632GG6MB-12 does not support CL = 13 or CL = 14 at this frequency.