Winbond Electronics Corporation W632GG6MB12I

Overview

W632GG6MB12I from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with industrial temperature range (–40°C to +95°C), VDD/VDDQ = 1.5 V ± 0.075 V, and SSTL_15 interface compliance. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for embedded computing and industrial control memory subsystems.

For engineers reviewing the W632GG6MB12I datasheet, W632GG6MB12I pinout, W632GG6MB12I application, or W632GG6MB12I equivalent, key selection considerations include its DDR3-1600 industrial-grade timing (11-11-11), VFBGA-96 package compatibility, ODT configuration flexibility (RTT_NOM/RTT_WR), and support for write leveling and MPR-based system calibration in space-constrained, thermally demanding designs.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing, while posted CAS with additive latency (AL = 0, CL−1, CL−2) improves command bus efficiency.

It supports full JEDEC DDR3 features including dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), ZQ calibration using external 240 Ω resistor, and asynchronous reset initialization. Power-down modes (precharged/active) and burst refresh (IDD5B ≤ 180 mA) enable low-power operation across industrial thermal profiles.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free), ball pitch 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16256B-125KBL and MT41K128M16HA-125:E, W632GG6MB12I uniquely combines industrial temperature range, PASR/ASR, write leveling, and MPR in a standard DDR3-1600 1.5 V interface-enabling robust, calibrated memory subsystems without voltage translation or feature compromise.

Availability

W632GG6MB12I is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics data logging, and ruggedized edge AI applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W632GG6MB12I belongs to Winbond's W632GG6MB DDR3 SDRAM product line, designed specifically for high-reliability, thermally demanding embedded systems requiring JEDEC-compliant DDR3 performance with extended temperature support and advanced calibration features.

FAQ

What is the maximum clock frequency supported by W632GG6MB12I?

W632GG6MB12I supports a maximum clock frequency of 800 MHz (DDR3-1600), corresponding to a tCK(AVG) of 1.25 ns minimum. This is validated across its full industrial temperature range (–40°C to +95°C) with 11-11-11 timing (tRCD/tRP/tRAS = 13.75 ns min). The device does not support DDR3-1866 or higher speed bins.

Does W632GG6MB12I support write leveling, and how is it implemented?

Yes, W632GG6MB12I supports write leveling per JEDEC DDR3 specification. It uses the DQS strobe to calibrate per-lane delay offsets during initialization: the memory controller issues a write leveling command, and the DRAM returns a known pattern on DQ while adjusting DQS phase until edge detection aligns. This function is enabled via MR2 bit A4 and requires no external components.

What package type and ball count does W632GG6MB12I use?

W632GG6MB12I uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is lead-free and RoHS compliant. Ball assignments follow JEDEC-standard DDR3 layout, including dedicated DQ/DQS/DM groups, separate VDD/VDDQ/VSS rails, and differential CK/CK# inputs positioned for controlled impedance routing.

How does the RESET# pin function on W632GG6MB12I?

The RESET# pin on W632GG6MB12I is an asynchronous, active-low signal that initiates power-up initialization and mode register reset. When asserted, it forces all internal state machines into reset, clears mode registers, and prepares the device for subsequent ZQ calibration and MRS commands. It operates independently of CK/CK# and is required before normal operation begins.

Can W632GG6MB12I operate in Partial Array Self-Refresh (PASR) mode, and what benefit does it provide?

Yes, W632GG6MB12I supports PASR via MR2 bits A0–A2. PASR allows refreshing only selected banks (e.g., ¼, ½, or full array), reducing self-refresh current (IDD6) proportionally. At full temperature range, this cuts typical IDD6 from 11 mA to ~6–8 mA depending on bank count-extending battery life in portable industrial recorders and lowering thermal load in sealed enclosures.