Winbond Electronics Corporation W632GG6MB-12 TR

Overview

W632GG6MB-12 TR from Winbond is a 2 Gbit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1600 (11-11-11) operation at 800 MHz clock frequency with CAS Latency 5–11 and programmable CAS Write Latency 5–8. It features on-die termination (ODT), ZQ calibration, multi-purpose register (MPR), and write leveling for system-level timing calibration - deployed in industrial computing, network infrastructure, and embedded controllers requiring high-bandwidth, low-latency memory.

For engineers reviewing the W632GG6MB-12 TR datasheet, W632GG6MB-12 TR pinout, W632GG6MB-12 TR application, or W632GG6MB-12 TR equivalent, key selection criteria include DDR3-1600 speed bin compliance, VFBGA-96 package compatibility, industrial temperature range (0°C to 95°C), SSTL_15 interface voltage, and support for dynamic ODT and auto self-refresh.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# inputs synchronized at the crossing point for command/address latching. All I/Os operate source-synchronously with DQS/DQS# strobes, with DLL alignment of DQ and DQS transitions to CK.

It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), programmable burst lengths (BL8/BC4), interleaved or nibble-sequential read ordering, and asynchronous RESET# for power-up initialization. Refresh modes include standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR).

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch. Ball layout follows JEDEC-standard DDR3 SDRAM pin assignment for address, command, data, strobe, and control signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-12KBL, W632GG6MB-12 TR offers native 1.5 V operation without voltage translation, tighter tAA/tRCD/tRP consistency across CL settings, and proven interoperability with legacy DDR3 controllers lacking DDR3L-specific timing adjustments.

Availability

W632GG6MB-12 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and video surveillance applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GG6MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6MB series targets cost-sensitive, high-reliability DDR3 applications in industrial control and networking equipment, emphasizing JEDEC compliance, extended temperature operation, and robust signal integrity features like ZQ calibration and write leveling.

FAQ

What is the maximum supported CAS Latency for W632GG6MB-12 TR at DDR3-1600 speed?

W632GG6MB-12 TR supports CAS Latency settings of 5, 6, 7, 8, 9, 10, and 11 at DDR3-1600 (11-11-11) speed. CL=11 corresponds to tAA = 13.75 ns minimum, and is the highest latency setting validated for full-speed operation under 0–95°C conditions. CL=13 and CL=14 are not supported in the -12 speed grade.

Does W632GG6MB-12 TR require external termination resistors?

No, W632GG6MB-12 TR integrates programmable on-die termination (ODT) for DQ, DQS, and DM signals, eliminating the need for external parallel termination. External 240 Ω ±1 % resistor is required only on the ZQ pin for calibration - not for signal termination.

Can W632GG6MB-12 TR operate in self-refresh mode at 95°C case temperature?

Yes, W632GG6MB-12 TR supports normal temperature self-refresh (IDD6 ≤ 11 mA) up to 95°C case temperature. For operation above 85°C, Auto Self-Refresh (ASR) must be enabled via MR2 (A6=1) to double refresh rate (tREFI = 3.9 µs), ensuring data retention integrity.

What is the function of the MPR in W632GG6MB-12 TR and how is it accessed?

The Multi-Purpose Register (MPR) in W632GG6MB-12 TR outputs a fixed 8-bit pattern (0x00 or 0xFF) on DQ[7:0] during reads, used for system-level timing margin validation and DQ/DQS eye measurement. It is enabled by setting MRS bit MR3[A0]=1 and reading from bank address 0 with A10=1.

Is W632GG6MB-12 TR pin-compatible with other Winbond DDR3 SDRAMs in the same VFBGA-96 package?

W632GG6MB-12 TR shares identical VFBGA-96 pinout and ball assignment with all members of the W632GG6MB family (e.g., -09, -11, -15 variants) and is compatible with JEDEC-standard DDR3 SDRAM layouts. However, speed-grade-specific timing parameters and MR programming must be verified per application.