Winbond Electronics Corporation W632GG6MB-15

Overview

W632GG6MB-15 from Winbond is a 2G-bit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1333 (9-9-9) operation at 667 MHz clock frequency with CAS Latency 9, 1.5V VDD/VDDQ supply, and SSTL_15 interface - deployed in embedded computing, industrial control, and network infrastructure memory subsystems.

For engineers reviewing the W632GG6MB-15 datasheet, W632GG6MB-15 pinout, W632GG6MB-15 application, or W632GG6MB-15 equivalent, key selection criteria include tRCD/tRP = 13.5 ns, IDD4R ≤ 165 mA, -40°C to +95°C industrial temperature range, and VFBGA-96 (7.5×13 mm) package compatibility with JEDEC DDR3-1333 timing and ZQ calibration requirements.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports programmable CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Functional features include asynchronous RESET#, on-die termination (ODT) with dynamic Rtt_WR support, ZQ calibration using external 240 Ω resistor, Multi-Purpose Register (MPR) for system-level timing calibration, and power-down modes (precharged/active) with self-refresh and partial array self-refresh (PASR) for low-power operation.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with ball pitch of 0.8 mm, compliant with JEDEC MO-270AB standard. Ball assignment follows standard DDR3 SDRAM layout with dedicated VDD/VSS, address/command, data, strobe, and ODT control balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6MB-15, MT41K256M16HA-125:A offers higher speed at lower voltage but demands full DDR3L redesign, while IS43TR16256B-15KBL matches timing and voltage but omits MPR and write leveling - making W632GG6MB-15 optimal for industrial systems requiring robust calibration and thermal resilience.

Availability

W632GG6MB-15 is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging controllers, and video surveillance DVRs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical embedded systems requiring extended temperature operation, JEDEC-compliant timing, and advanced power management features like PASR and dynamic ODT.

FAQ

What is the maximum operating frequency supported by W632GG6MB-15?

W632GG6MB-15 supports DDR3-1333 operation with a maximum clock frequency (fCK) of 667 MHz, corresponding to 1333 MT/s data rate. Its tRCD and tRP minimum values are specified at 13.5 ns (9 clock cycles), and it complies fully with JEDEC DDR3-1333 (9-9-9) timing requirements under 0°C to +95°C case temperature conditions.

Does W632GG6MB-15 support on-die termination (ODT) and how is it configured?

Yes, W632GG6MB-15 supports programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals via MR1 and MR2 registers. It offers synchronous ODT with selectable RTT values (RZQ/4, RZQ/2, RZQ/1), dynamic ODT (Rtt_WR) during writes, and asynchronous ODT mode transitions - all controlled through mode register settings and ODT pin assertion.

What package type and ball count does W632GG6MB-15 use?

W632GG6MB-15 uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum height. This JEDEC MO-270AB-compliant package supports standard DDR3 layout practices and thermal dissipation requirements for industrial applications.

How does W632GG6MB-15 handle refresh at elevated temperatures?

At case temperatures above 85°C, W632GG6MB-15 requires doubled auto-refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 or entering Manual Self-Refresh mode - both supported in the W632GG6MB-15 and validated for operation up to +95°C.

Is write leveling supported on W632GG6MB-15 and what is its purpose?

Yes, W632GG6MB-15 supports hardware-assisted write leveling per JEDEC DDR3 specification. It adjusts DQS-to-CK skew during initialization to ensure write data setup/hold compliance at 1333 MT/s. The feature relies on internal logic that samples CK edge relative to DQS delay, and is enabled via MR1 bit A1, making W632GG6MB-15 suitable for high-reliability memory interfaces.