Winbond Electronics Corporation W632GG6MB15I
- Part No.:
- W632GG6MB15I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GG6MB15I.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,837
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GG6MB15I from Winbond Electronics is a 2G-bit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1333 (9-9-9) operation at up to 667 MHz clock frequency with CAS Latency 9, CWL 7, and industrial temperature range (−40°C to +95°C). It features on-die termination (ODT), ZQ calibration, programmable additive latency, and asynchronous RESET# for reliable memory subsystems in networking and industrial control applications.
For engineers reviewing the W632GG6MB15I datasheet, W632GG6MB15I pinout, W632GG6MB15I application, or W632GG6MB15I equivalent, key selection criteria include its VFBGA-96 package, SSTL_15 interface compliance, 2K-byte page size, support for dynamic ODT and write leveling, and JEDEC-compliant DDR3-1333 timing across extended temperature.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# inputs synchronize all commands, while bi-directional DQS/DQS# strobes align read data edges and write data centers using an integrated DLL.
It supports programmable mode registers (MR0–MR3) for CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), partial array self-refresh (PASR), and auto self-refresh (ASR). ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M × 8 banks × 16 bits) |
| Data Rate | DDR3-1333: 1333 MT/s (667 MHz clock) |
| CAS Latency | CL = 9 (tAA = 13.5 ns min), configurable via MR0 |
| CAS Write Latency | CWL = 7 (WL = AL + CWL), set per frequency in MR2 |
| Operating Temp | −40°C ≤ TCASE ≤ 95°C (industrial grade) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V |
| Interface Standard | SSTL_15 compliant I/O with differential CK/CK# and DQS/DQS# |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS/lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; 1.0 mm maximum thickness; lead-free, RoHS-compliant construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address during ACT, READ, WRITE, PRE; bank address A12–A13 |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for command targeting |
| CK, CK# | Differential Clock | Edge-triggered command latching at crosspoint; defines system timing reference |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low chip select and row/column/enable controls per JEDEC DDR3 |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; SSTL_15 compatible; supports DM masking |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe; edge-aligned on reads, center-aligned on writes |
| DM0–DM1 | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8] respectively |
| RESET# | Asynchronous Reset | Initiates power-up sequence or resets internal state without clock dependency |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination per MR1/MR2 |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1% external resistor to ground for impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency | AL = 0, CL−1, or CL−2 enables optimized command bus efficiency for varying system timing margins |
| Dynamic ODT (Rtt_WR) | Configurable termination during write bursts improves signal integrity without fixed PCB routing constraints |
| Write Leveling Support | Calibrates DQS-to-CK skew at system level using MPR-defined patterns and feedback loop |
| ZQ Calibration | One-time or periodic 240 Ω reference-based tuning of output drivers and ODT impedances for voltage/temperature drift compensation |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks-critical for low-power industrial standby modes |
| Multi-Purpose Register (MPR) | Predefined calibration bitstream (0x00000000) accessible via READ command for system timing validation |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with burst data logging and firmware update staging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controllers; interfaces via 16-bit DDR3 bus with 667 MHz clock. Use Value: Industrial temperature rating (−40°C to +95°C) ensures reliability in uncontrolled cabinet environments; PASR lowers idle power by 45% vs full-array refresh. | Use Scenario: High-throughput packet buffering in Layer 2/L3 managed switches handling 10 GbE line-rate traffic. IC Role / Device Role / Timing Role: Shared packet buffer memory for ASIC/FPGA-based forwarding engines; operates at DDR3-1333 with CL9 for predictable tRCD/tRP latency. Use Value: Dynamic ODT and write leveling maintain signal integrity across dense 16-layer PCB backplanes; ZQ calibration sustains impedance accuracy over thermal cycling. |
| Medical Imaging Data Cache | Automated Test Equipment (ATE) FIFO |
Use Scenario: Temporary storage of raw sensor frames during CT/MRI image reconstruction pipelines before GPU transfer. IC Role / Device Role / Timing Role: Low-latency frame cache between ADC front-end and PCIe Gen3 host interface; uses burst reads with interleaved ordering. Use Value: 2K-byte page size matches typical medical sensor burst lengths; SSTL_15 I/O ensures noise immunity in EMI-sensitive diagnostic environments. | Use Scenario: High-speed pattern generation and response capture in semiconductor wafer testers requiring precise timing alignment. IC Role / Device Role / Timing Role: Dual-port FIFO replacement with synchronous DDR3 interface; leverages posted CAS and AL=1 to decouple command and data phases. Use Value: Asynchronous RESET# enables deterministic initialization after power-cycle events; tRC = 49.5 ns guarantees minimum refresh interval compliance at 95°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | Same density (2Gb), VFBGA-96, DDR3-1600 (CL11), −40°C to +95°C; no PASR or ASR support | Higher bandwidth but less flexible low-power refresh modes; requires tighter layout for 800 MHz clock | Choose when system demands >1600 MT/s and can accommodate higher IDD0/IDD1 currents |
| IS43TR16256B-15KBL | 2Gb DDR3L, 1.35 V operation, VFBGA-96, DDR3L-1333 (CL9), −40°C to +95°C; supports only static ODT | Lower voltage reduces power by ~18%, but lacks write leveling and dynamic ODT for high-speed signal integrity | Choose for battery-powered or thermally constrained systems where 1.35 V supply is available and signal integrity margin is sufficient |
Compared with MT41K256M16HA-125:E and IS43TR16256B-15KBL, the W632GG6MB15I offers unique industrial-grade DDR3-1333 performance with PASR, ASR, and dynamic ODT-enabling lower system power and robust signal integrity in thermally variable embedded designs without voltage scaling trade-offs.
Availability
W632GG6MB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed −40°C to +95°C operation.
Supply support for W632GG6MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GG6MB series targets cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant DDR3 with enhanced power management and system-level calibration features-not just raw bandwidth.
FAQ
What is the maximum clock frequency supported by W632GG6MB15I?
The W632GG6MB15I supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rates (1333 MT/s). This is validated under industrial temperature conditions (−40°C to +95°C) with CL9/CWL7 timing and meets JEDEC specification tCK(AVG) = 1.5 ns min for CL9 operation. The device does not support higher speed bins like DDR3-1600 or DDR3-1866.
Does W632GG6MB15I support on-die termination (ODT) and how is it configured?
Yes, W632GG6MB15I supports both static and dynamic ODT. Static termination (RTT_NOM) is enabled via MR1 bits A9–A10; dynamic ODT (Rtt_WR) is activated during write operations using MR2 bit A2. Impedance values (60 Ω, 120 Ω, 40 Ω) are selected through MR1/A9–A10 and MR2/A2–A3. Configuration requires proper mode register programming before use.
How does the ZQ calibration function work on W632GG6MB15I?
ZQ calibration on W632GG6MB15I uses an external 240 Ω ±1% resistor connected to the ZQ pin to calibrate internal output driver and ODT impedances. A ZQCL command initiates one-time calibration at power-up; ZQCS supports periodic recalibration. The process compensates for voltage and temperature drift, ensuring SSTL_15 I/O compliance across the full −40°C to +95°C range.
Can W632GG6MB15I operate in Partial Array Self-Refresh (PASR) mode, and what benefit does it provide?
Yes, W632GG6MB15I supports PASR via MR2 bits A1–A0 to refresh only selected banks (¼, ½, or full array). In industrial applications with intermittent data activity, PASR reduces self-refresh current (IDD6) by up to 45% compared to full-array refresh-extending uptime in thermally isolated enclosures and lowering system cooling requirements.
What is the purpose of the Multi-Purpose Register (MPR) in W632GG6MB15I?
The MPR in W632GG6MB15I stores a fixed 128-bit calibration pattern (0x00000000) readable via standard READ commands. It enables system-level timing validation-particularly for write leveling-by providing a known, jitter-free reference sequence that the memory controller uses to measure and correct DQS-to-CK skew across all DQ lanes.
W632GG6MB15I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GG6MB15I FAQ
1.How can I place an order for W632GG6MB15I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG6MB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG6MB15I reliable?
The price and inventory of W632GG6MB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6MB15I is usually 5 days.
3.What payment methods are accepted for W632GG6MB15I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6MB15I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG6MB15I?
W632GG6MB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG6MB15I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG6MB15I?
For technical support, including W632GG6MB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6MB15I requirements.
6.How does Aetrix verify that W632GG6MB15I is sourced from the original manufacturer or authorized distributors?
All W632GG6MB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6MB15I meets industry standards.
7.What is the process for return or replacement of W632GG6MB15I?
All W632GG6MB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6MB15I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG6MB15I part is unused and in its original packaging.
Return procedure for W632GG6MB15I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG6MB15I Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

