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Winbond Electronics Corporation W632GG6MB15I

Part No.:
W632GG6MB15I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW632GG6MB15I.pdf
Description:
IC DRAM 2GBIT PAR 96VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,837

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Product details

Overview

W632GG6MB15I from Winbond Electronics is a 2G-bit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1333 (9-9-9) operation at up to 667 MHz clock frequency with CAS Latency 9, CWL 7, and industrial temperature range (−40°C to +95°C). It features on-die termination (ODT), ZQ calibration, programmable additive latency, and asynchronous RESET# for reliable memory subsystems in networking and industrial control applications.

For engineers reviewing the W632GG6MB15I datasheet, W632GG6MB15I pinout, W632GG6MB15I application, or W632GG6MB15I equivalent, key selection criteria include its VFBGA-96 package, SSTL_15 interface compliance, 2K-byte page size, support for dynamic ODT and write leveling, and JEDEC-compliant DDR3-1333 timing across extended temperature.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# inputs synchronize all commands, while bi-directional DQS/DQS# strobes align read data edges and write data centers using an integrated DLL.

It supports programmable mode registers (MR0–MR3) for CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), partial array self-refresh (PASR), and auto self-refresh (ASR). ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16M × 8 banks × 16 bits)
Data RateDDR3-1333: 1333 MT/s (667 MHz clock)
CAS LatencyCL = 9 (tAA = 13.5 ns min), configurable via MR0
CAS Write LatencyCWL = 7 (WL = AL + CWL), set per frequency in MR2
Operating Temp−40°C ≤ TCASE ≤ 95°C (industrial grade)
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V
Interface StandardSSTL_15 compliant I/O with differential CK/CK# and DQS/DQS#
PackageVFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS/lead-free)

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; 1.0 mm maximum thickness; lead-free, RoHS-compliant construction.

Pin/TerminalCircuit RoleDesign Meaning
A0–A13Address InputsRow/column address during ACT, READ, WRITE, PRE; bank address A12–A13
BA0–BA2Bank AddressSelects one of eight internal banks for command targeting
CK, CK#Differential ClockEdge-triggered command latching at crosspoint; defines system timing reference
CS#, RAS#, CAS#, WE#Command SignalsActive-low chip select and row/column/enable controls per JEDEC DDR3
DQ0–DQ15Data I/O16-bit bidirectional data bus; SSTL_15 compatible; supports DM masking
DQS, DQS#Differential StrobeSource-synchronous strobe; edge-aligned on reads, center-aligned on writes
DM0–DM1Data MaskByte-level write masking for DQ[7:0] and DQ[15:8] respectively
RESET#Asynchronous ResetInitiates power-up sequence or resets internal state without clock dependency
ODTOn-Die Termination ControlDynamic enable/disable of RTT_NOM/RTT_WR termination per MR1/MR2
ZQZQ Calibration ReferenceConnects to 240 Ω ±1% external resistor to ground for impedance tuning

Key Features

FeatureDesign Value
Programmable Additive LatencyAL = 0, CL−1, or CL−2 enables optimized command bus efficiency for varying system timing margins
Dynamic ODT (Rtt_WR)Configurable termination during write bursts improves signal integrity without fixed PCB routing constraints
Write Leveling SupportCalibrates DQS-to-CK skew at system level using MPR-defined patterns and feedback loop
ZQ CalibrationOne-time or periodic 240 Ω reference-based tuning of output drivers and ODT impedances for voltage/temperature drift compensation
Partial Array Self-Refresh (PASR)Reduces self-refresh current by refreshing only active banks-critical for low-power industrial standby modes
Multi-Purpose Register (MPR)Predefined calibration bitstream (0x00000000) accessible via READ command for system timing validation

Applications

Industrial PLC Memory BufferNetwork Switch Packet Buffer

Use Scenario: Real-time deterministic control logic execution with burst data logging and firmware update staging.

IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controllers; interfaces via 16-bit DDR3 bus with 667 MHz clock.

Use Value: Industrial temperature rating (−40°C to +95°C) ensures reliability in uncontrolled cabinet environments; PASR lowers idle power by 45% vs full-array refresh.

Use Scenario: High-throughput packet buffering in Layer 2/L3 managed switches handling 10 GbE line-rate traffic.

IC Role / Device Role / Timing Role: Shared packet buffer memory for ASIC/FPGA-based forwarding engines; operates at DDR3-1333 with CL9 for predictable tRCD/tRP latency.

Use Value: Dynamic ODT and write leveling maintain signal integrity across dense 16-layer PCB backplanes; ZQ calibration sustains impedance accuracy over thermal cycling.

Medical Imaging Data CacheAutomated Test Equipment (ATE) FIFO

Use Scenario: Temporary storage of raw sensor frames during CT/MRI image reconstruction pipelines before GPU transfer.

IC Role / Device Role / Timing Role: Low-latency frame cache between ADC front-end and PCIe Gen3 host interface; uses burst reads with interleaved ordering.

Use Value: 2K-byte page size matches typical medical sensor burst lengths; SSTL_15 I/O ensures noise immunity in EMI-sensitive diagnostic environments.

Use Scenario: High-speed pattern generation and response capture in semiconductor wafer testers requiring precise timing alignment.

IC Role / Device Role / Timing Role: Dual-port FIFO replacement with synchronous DDR3 interface; leverages posted CAS and AL=1 to decouple command and data phases.

Use Value: Asynchronous RESET# enables deterministic initialization after power-cycle events; tRC = 49.5 ns guarantees minimum refresh interval compliance at 95°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M16HA-125:ESame density (2Gb), VFBGA-96, DDR3-1600 (CL11), −40°C to +95°C; no PASR or ASR supportHigher bandwidth but less flexible low-power refresh modes; requires tighter layout for 800 MHz clockChoose when system demands >1600 MT/s and can accommodate higher IDD0/IDD1 currents
IS43TR16256B-15KBL2Gb DDR3L, 1.35 V operation, VFBGA-96, DDR3L-1333 (CL9), −40°C to +95°C; supports only static ODTLower voltage reduces power by ~18%, but lacks write leveling and dynamic ODT for high-speed signal integrityChoose for battery-powered or thermally constrained systems where 1.35 V supply is available and signal integrity margin is sufficient

Compared with MT41K256M16HA-125:E and IS43TR16256B-15KBL, the W632GG6MB15I offers unique industrial-grade DDR3-1333 performance with PASR, ASR, and dynamic ODT-enabling lower system power and robust signal integrity in thermally variable embedded designs without voltage scaling trade-offs.

Availability

W632GG6MB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed −40°C to +95°C operation.

Supply support for W632GG6MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6MB series targets cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant DDR3 with enhanced power management and system-level calibration features-not just raw bandwidth.

FAQ

What is the maximum clock frequency supported by W632GG6MB15I?

The W632GG6MB15I supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rates (1333 MT/s). This is validated under industrial temperature conditions (−40°C to +95°C) with CL9/CWL7 timing and meets JEDEC specification tCK(AVG) = 1.5 ns min for CL9 operation. The device does not support higher speed bins like DDR3-1600 or DDR3-1866.

Does W632GG6MB15I support on-die termination (ODT) and how is it configured?

Yes, W632GG6MB15I supports both static and dynamic ODT. Static termination (RTT_NOM) is enabled via MR1 bits A9–A10; dynamic ODT (Rtt_WR) is activated during write operations using MR2 bit A2. Impedance values (60 Ω, 120 Ω, 40 Ω) are selected through MR1/A9–A10 and MR2/A2–A3. Configuration requires proper mode register programming before use.

How does the ZQ calibration function work on W632GG6MB15I?

ZQ calibration on W632GG6MB15I uses an external 240 Ω ±1% resistor connected to the ZQ pin to calibrate internal output driver and ODT impedances. A ZQCL command initiates one-time calibration at power-up; ZQCS supports periodic recalibration. The process compensates for voltage and temperature drift, ensuring SSTL_15 I/O compliance across the full −40°C to +95°C range.

Can W632GG6MB15I operate in Partial Array Self-Refresh (PASR) mode, and what benefit does it provide?

Yes, W632GG6MB15I supports PASR via MR2 bits A1–A0 to refresh only selected banks (¼, ½, or full array). In industrial applications with intermittent data activity, PASR reduces self-refresh current (IDD6) by up to 45% compared to full-array refresh-extending uptime in thermally isolated enclosures and lowering system cooling requirements.

What is the purpose of the Multi-Purpose Register (MPR) in W632GG6MB15I?

The MPR in W632GG6MB15I stores a fixed 128-bit calibration pattern (0x00000000) readable via standard READ commands. It enables system-level timing validation-particularly for write leveling-by providing a known, jitter-free reference sequence that the memory controller uses to measure and correct DQS-to-CK skew across all DQ lanes.

W632GG6MB15I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W632GG6MB15I FAQ

1.How can I place an order for W632GG6MB15I through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6MB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6MB15I reliable?

The price and inventory of W632GG6MB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6MB15I is usually 5 days.

3.What payment methods are accepted for W632GG6MB15I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6MB15I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6MB15I?

W632GG6MB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6MB15I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6MB15I?

For technical support, including W632GG6MB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6MB15I requirements.

6.How does Aetrix verify that W632GG6MB15I is sourced from the original manufacturer or authorized distributors?

All W632GG6MB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6MB15I meets industry standards.

7.What is the process for return or replacement of W632GG6MB15I?

All W632GG6MB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6MB15I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6MB15I part is unused and in its original packaging.

Return procedure for W632GG6MB15I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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