Winbond Electronics Corporation W632GG6MB15J

Overview

W632GG6MB15J from Winbond is a 2G-bit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, operating at DDR3-1333 (9-9-9) speed grade with 1.5V VDD/VDDQ supply, -40°C to +105°C industrial-plus temperature range, and SSTL_15 interface - deployed in high-reliability embedded computing, network edge routers, and industrial control systems requiring extended thermal stability.

For engineers reviewing the W632GG6MB15J datasheet, W632GG6MB15J pinout, W632GG6MB15J application, or W632GG6MB15J equivalent, key selection criteria include its 96-ball VFBGA package, programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration support, and asynchronous RESET# for robust power-up initialization in thermally demanding environments.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent memory access. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), and multi-purpose register (MPR) readout for system-level timing calibration.

The device uses differential CK/CK# inputs synchronized at the clock cross-point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ–DQS timing, while ZQ calibration maintains output driver and ODT impedance accuracy using an external 240Ω reference resistor.

Key Specifications

Pinout & Package

Packaged in a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 7.5 mm × 13 mm × 1.0 mm, RoHS-compliant and lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-15HBL, W632GG6MB15J uniquely delivers +105°C operation with mandatory ASR/ZQ calibration - making it the only option for sealed, fanless enclosures exposed to solar loading or engine-bay proximity.

Availability

W632GG6MB15J is available at Aetrix Electronics and suitable for industrial control systems, telecom infrastructure equipment, and ruggedized medical devices requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W632GG6MB15J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6MB series targets high-reliability embedded applications demanding extended temperature operation, JEDEC-compliant DDR3 functionality, and robust power-up sequencing - particularly where thermal resilience and long-term supply continuity are critical.

FAQ

What is the maximum operating temperature specification for W632GG6MB15J?

W632GG6MB15J is rated for -40°C to +105°C case temperature (TCASE). Operation above +95°C requires enabling Auto Self-Refresh (ASR) mode via MR2 bit A6 or using Manual Self-Refresh with Extended Temperature Range (MR2 A6=0, A7=1), and doubling the refresh rate to tREFI = 3.9 µS. This ensures data retention and timing compliance under sustained thermal stress.

Does W632GG6MB15J support dynamic on-die termination (ODT) during write operations?

Yes, W632GG6MB15J supports Dynamic ODT (Rtt_WR) as defined in MR2. When enabled, ODT resistance is activated only during WRITE commands on DQ and DQS pins, improving signal integrity on bidirectional buses without affecting read operations. Rtt_WR values are programmable via MR1 and MR2, with supported impedances including 120Ω, 60Ω, and 40Ω.

What ZQ calibration resistor value is required for W632GG6MB15J?

W632GG6MB15J requires a 240Ω ±1% external resistor connected between the ZQ pin and ground. This resistor serves as the reference for factory-trimmed output driver and ODT impedance calibration. ZQ calibration must be performed at power-up and optionally during operation to maintain ±10% impedance accuracy across voltage and temperature variations.

Can W632GG6MB15J operate at DDR3-1066 speed with reduced CAS latency?

No - W632GG6MB15J is a fixed DDR3-1333 (9-9-9) speed bin device. While JEDEC allows down-binning for some parts, the datasheet explicitly lists only Sup_CL = 5,6,(7),8,9,10 and Sup_CWL = 5,6,7 for the -15J grade. CL=7 is optional and requires tAA/tRCD/tRP min ≤13.125 ns; however, no CL=5 or CL=6 timing parameters are published for sub-1333 operation, so DDR3-1066 use is not supported.

Is the RESET# pin on W632GG6MB15J synchronous or asynchronous?

The RESET# pin on W632GG6MB15J is asynchronous. It initiates power-up initialization and resets internal state machines regardless of CK/CK# activity. Per JEDEC spec, RESET# must be held low for ≥200 ns after VDD/VDDQ stabilization and before first CKE assertion. This guarantees deterministic entry into known state, critical for fail-safe boot in safety-critical systems using W632GG6MB15J.