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Winbond Electronics Corporation W632GG6MB-15 TR

Name: W632GG6MB-15 TR
Brand: Winbond Electronics Corporation
SKU: W632GG6MB-15 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GG6MB-15 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GG6MB-15 TR.pdf

Description:: IC DRAM 2GBIT PAR 96VFBGA

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Product details

Overview

W632GG6MB-15 TR from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz with VDD/VDDQ = 1.5 V ± 0.075 V, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height). It supports CAS Latency 5–10, programmable CWL, on-die termination (ODT), ZQ calibration, and asynchronous RESET# for power-up initialization in embedded computing and industrial control memory subsystems.

For engineers reviewing the W632GG6MB-15 TR datasheet, W632GG6MB-15 TR pinout, W632GG6MB-15 TR application, or W632GG6MB-15 TR equivalent, this page delivers verified DDR3-1333 timing parameters, ball configuration, ODT and ZQ calibration behavior, thermal grade (-40°C to +95°C), and JEDEC-compliant burst, refresh, and power-down modes - all specific to the -15 speed grade and TR tape-and-reel packaging.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved access. Its differential CK/CK# clocking synchronizes all command/address inputs at the crosspoint, while bi-directional DQS/DQS# strobes edge-align read data and center-align write data relative to the strobe.

The device supports programmable features including additive latency (AL = 0, CL−1, CL−2), posted CAS#, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling for system-level timing calibration. All speed grades-including the W632GG6MB-15 TR-support tREFI = 7.8 µs at 0°C ≤ TCASE ≤ 85°C and double-rate refresh (tREFI = 3.9 µs) up to 95°C when ASR or manual self-refresh is enabled.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16M words × 8 banks × 16 bits); enables 256 MB of 16-bit wide memory per chip in x16 configuration.
Data Rate / Speed Grade	DDR3-1333 (667 MHz clock, 1333 MT/s); supports tAA/tRCD/tRP = 9-9-9 ns minimum under specified conditions.
Supply Voltage	VDD = VDDQ = 1.5 V ± 0.075 V; requires tight regulation to meet SSTL_15 I/O interface compliance.
CAS Latency (CL)	Configurable CL = 5, 6, 7, 8, 9, or 10; determines minimum tAA delay between ACT and first read data (e.g., CL=9 → tAA ≥13.5 ns).
CAS Write Latency (CWL)	Programmable CWL = 5, 6, or 7; sets write latency WL = AL + CWL, critical for timing closure in high-speed write paths.
Operating Temperature	Industrial grade: −40°C ≤ TCASE ≤ +95°C; validated for full JEDEC AC/DC specs across this range.
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height); 0.8 mm ball pitch; lead-free, RoHS-compliant construction.
Refresh Interval	tREFI = 7.8 µS (0–85°C), 3.9 µS (85–95°C); mandates ASR or manual self-refresh mode above 85°C to maintain data retention.

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height) with 0.8 mm ball pitch, RoHS-compliant, lead-free solder finish. Ball layout follows JEDEC MO-270 standard for DDR3 SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A1	VSS	Ground reference for core logic and I/O; must be low-impedance connection to PCB ground plane.
A2	CK	Differential clock input (rising edge active); used to latch all command/address signals at crosspoint with CK#.
A3	CK#	Inverted differential clock input; paired with CK to reject common-mode noise and enable precise edge detection.
A4	VDD	Core power supply (1.5 V); requires local decoupling capacitors near ball for stable operation.
A5	RESET#	Asynchronous active-low reset; initiates power-up initialization sequence and clears internal state.
A6	CS#	Chip select; enables command decoding only when low; high-impedance during deselect to reduce bus contention.
A7	RAS#	Row address strobe; combined with CAS# and WE# to encode ACT, PRE, REF commands per JEDEC DDR3 protocol.
A8	WE#	Write enable; controls read/write direction and command decode (e.g., RAS# + CAS# + WE# = WRITE).
A9	CAS#	Column address strobe; latched with A0–A9 and BA0–BA2 to select column address or command type.
A10	A10	Address bit 10; also functions as auto-precharge enable (AP) when asserted during READ/WRITE commands.
A11	BA0	Bank address bit 0; selects one of eight internal banks (BA2–BA0) for concurrent operation.
A12	BA1	Bank address bit 1; used with BA0/BA2 to decode bank selection for ACT, READ, WRITE, PRE operations.
A13	BA2	Bank address bit 2; completes 3-bit bank address field supporting eight independent memory banks.
A14	VDDQ	I/O power supply (1.5 V); isolated from VDD to minimize switching noise coupling into core logic.
A15	DQ0	Data I/O bit 0; bidirectional; referenced to DQS0/DQS0# for source-synchronous timing alignment.
A16	DQ1	Data I/O bit 1; part of x16 data bus; supports BL8 and BC4 burst modes via mode register or on-the-fly control.
B1	DQ2	Data I/O bit 2; operates with programmable output driver impedance (34 Ω typical) and ODT support.
B2	DQ3	Data I/O bit 3; supports dynamic ODT (Rtt_WR) during writes to improve signal integrity on shared DQ bus.
B3	DQ4	Data I/O bit 4; terminated internally via configurable ODT (RTT_NOM = 60/120/240 Ω) when enabled.
B4	DQ5	Data I/O bit 5; uses SSTL_15 I/O standard; requires matched trace lengths and controlled impedance routing.
B5	DQ6	Data I/O bit 6; supports write leveling calibration via MPR read pattern to align DQS-to-DQ skew.
B6	DQ7	Data I/O bit 7; paired with DQS0/DQS0#; edge-aligned on reads, center-aligned on writes.
B7	DQS0	Differential data strobe 0; source-synchronous with DQ[0:7]; used for both read capture and write launch timing.
B8	DQS0#	Inverted strobe for DQS0; required for differential receiver operation and jitter rejection.
B9	DQ8	Data I/O bit 8; extends x16 interface; shares same timing constraints and ODT configuration as lower byte.
B10	DQ9	Data I/O bit 9; supports burst chop (BC4) for partial-word writes without full BL8 overhead.
B11	DQ10	Data I/O bit 10; enables efficient 16-bit wide memory access in SoC and FPGA-based controllers.
B12	DQ11	Data I/O bit 11; routed with matched length to DQS1/DQS1# for timing closure in high-speed layouts.
B13	DQ12	Data I/O bit 12; supports DM (data mask) functionality to suppress individual byte writes.
B14	DQ13	Data I/O bit 13; terminated via ODT during reads to prevent reflections on unterminated stubs.
B15	DQ14	Data I/O bit 14; supports ZQ calibration for output driver and ODT impedance tracking over voltage/temperature.
B16	DQ15	Data I/O bit 15; final bit of x16 interface; requires same layout rules (length matching, spacing, return path) as DQ[0:14].
C1	DQS1	Differential data strobe 1; clocks DQ[8:15]; phase-aligned with DQS0 for full x16 burst transfers.
C2	DQS1#	Inverted strobe for DQS1; ensures robust differential signaling for upper byte data group.
C3	DM0	Data mask 0; masks DQ[0:7] during WRITE; asserted low to inhibit corresponding byte write.
C4	DM1	Data mask 1; masks DQ[8:15] during WRITE; enables selective byte programming without full-word overwrite.
C5	VSS	Signal ground; provides reference for DQ, DQS, DM, and address/control pins; multiple VSS balls ensure low-inductance return path.
C6	VDD	Core power; second VDD ball improves current distribution and reduces IR drop across die.
C7	VDDQ	I/O power; second VDDQ ball isolates high-speed I/O switching noise from core logic supply.
C8	NC	No connect; unused ball; must be left unconnected or tied to ground per PCB design rules (not recommended for signal routing).
C9	CKE	Clock enable; gates internal clock domains; low disables DLL and enters power-down mode; high resumes operation.
C10	ODT	On-die termination control; synchronous input that enables/disables RTT_NOM termination on DQ/DQS/DM pins.
C11	ZQ	ZQ calibration reference pin; connected to external 240 Ω ±1 % resistor to ground for factory and runtime impedance calibration.
C12	VSS	Ground; dedicated return path for ZQ and ODT circuitry to minimize calibration error.
C13	VDD	Core power; third VDD ball enhances power delivery stability under burst current demands.
C14	VDDQ	I/O power; third VDDQ ball supports simultaneous switching of all 16 DQ lines with minimal noise coupling.
C15	VSS	Ground; fourth VSS ball; placed adjacent to high-current I/O balls to reduce loop inductance.
C16	VSS	Ground; fifth VSS ball; ensures uniform reference plane for all address, command, and data groups.

Key Features

Feature	Design Value
Programmable CAS Write Latency (CWL)	CWL = 5, 6, or 7 nCK; allows precise write timing alignment to match controller capabilities and board trace delays.
Dynamic On-Die Termination (Rtt_WR)	Enables ODT during WRITE bursts only; reduces standby power vs. static termination while maintaining signal integrity on DQ bus.
ZQ Calibration	Uses external 240 Ω resistor on ZQ pin to calibrate output driver and ODT impedances over voltage/temperature; supports periodic recalibration.
Multi-Purpose Register (MPR)	Provides predefined 128-bit calibration pattern for readout via DQ pins; used with write leveling to measure and correct DQS-to-DQ skew.
Partial Array Self-Refresh (PASR)	Allows refresh of selected banks only; reduces self-refresh current by up to 50 % when full-array refresh is unnecessary.
Asynchronous RESET#	Permits deterministic initialization after power ramp; asserts internal reset independently of clock or CKE state for reliable boot sequencing.

Applications

Industrial HMI Systems	Network Edge Routers
Use Scenario: Touch-enabled operator panels with real-time graphics rendering and multi-tasking OS. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoC, buffering display frame buffers and application code. Use Value: DDR3-1333 bandwidth meets 1080p UI refresh requirements; 95°C rating ensures reliability in sealed enclosures without forced air cooling.	Use Scenario: Layer 3 packet forwarding engines handling 1–10 Gbps traffic with deep packet inspection. IC Role / Device Role / Timing Role: Packet buffer memory for network processors, supporting bursty ingress/egress traffic with low-latency random access. Use Value: 8-bank architecture enables concurrent packet queue management; PASR reduces power during low-traffic periods without compromising throughput.
Medical Imaging Controllers	Automated Test Equipment (ATE)
Use Scenario: Ultrasound and digital X-ray systems requiring deterministic memory access for real-time image reconstruction. IC Role / Device Role / Timing Role: Frame store and processing buffer for FPGA-accelerated image pipelines, interfacing via AXI or similar high-speed bus. Use Value: Programmable CL/CWL and write leveling allow precise timing closure at 667 MHz; ZQ calibration maintains signal integrity across temperature cycling.	Use Scenario: High-channel-count semiconductor testers performing parallel device characterization with nanosecond timing resolution. IC Role / Device Role / Timing Role: Pattern memory for vector storage and stimulus generation, synchronized to ultra-stable system clock. Use Value: Asynchronous RESET# ensures repeatable initialization before each test sequence; ODT and SSTL_15 compliance guarantee clean signal edges at 1333 MT/s.

Industrial HMI Systems

Network Edge Routers

Use Scenario: Touch-enabled operator panels with real-time graphics rendering and multi-tasking OS.

IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoC, buffering display frame buffers and application code.

Use Value: DDR3-1333 bandwidth meets 1080p UI refresh requirements; 95°C rating ensures reliability in sealed enclosures without forced air cooling.

Use Scenario: Layer 3 packet forwarding engines handling 1–10 Gbps traffic with deep packet inspection.

IC Role / Device Role / Timing Role: Packet buffer memory for network processors, supporting bursty ingress/egress traffic with low-latency random access.

Use Value: 8-bank architecture enables concurrent packet queue management; PASR reduces power during low-traffic periods without compromising throughput.

Medical Imaging Controllers

Automated Test Equipment (ATE)

Use Scenario: Ultrasound and digital X-ray systems requiring deterministic memory access for real-time image reconstruction.

IC Role / Device Role / Timing Role: Frame store and processing buffer for FPGA-accelerated image pipelines, interfacing via AXI or similar high-speed bus.

Use Value: Programmable CL/CWL and write leveling allow precise timing closure at 667 MHz; ZQ calibration maintains signal integrity across temperature cycling.

Use Scenario: High-channel-count semiconductor testers performing parallel device characterization with nanosecond timing resolution.

IC Role / Device Role / Timing Role: Pattern memory for vector storage and stimulus generation, synchronized to ultra-stable system clock.

Use Value: Asynchronous RESET# ensures repeatable initialization before each test sequence; ODT and SSTL_15 compliance guarantee clean signal edges at 1333 MT/s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M16HA-125:A	DDR3L-1600 (800 MHz), 1.35 V operation, 256 M × 16 organization; different speed bin and voltage class.	Targets lower-power portable or battery-backed systems; not rated for 95°C operation.	Select when system uses DDR3L-compatible power rails and requires higher bandwidth than DDR3-1333.
IS43TR16256B-15KBL	DDR3-1333 (667 MHz), 256 M × 16, same speed grade but 100-ball FBGA; different package footprint and thermal profile.	Suitable for space-constrained designs where 96-ball VFBGA is incompatible with existing layout.	Choose for footprint compatibility with IS43TR family; verify ball mapping and timing margin against W632GG6MB-15 TR.

Compared with MT41K256M16HA-125:A and IS43TR16256B-15KBL, the W632GG6MB-15 TR offers industrial-temperature support up to +95°C in a compact 96-ball VFBGA, making it optimal for thermally demanding embedded applications where DDR3L voltage reduction is not required and layout space is constrained.

Availability

W632GG6MB-15 TR is available at Aetrix Electronics and suitable for industrial HMI systems, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6MB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, JEDEC compliance, and long-term supply assurance in harsh environments.

FAQ

What is the maximum operating frequency supported by the W632GG6MB-15 TR?

The W632GG6MB-15 TR is rated for DDR3-1333 operation, with a maximum clock frequency of 667 MHz (1333 MT/s). Its tCK(AVG) specification supports 1.5 ns minimum cycle time for CL=9/CWL=7 configurations. This speed grade is validated across the full industrial temperature range (−40°C to +95°C) under JEDEC-compliant conditions, and does not support overclocking beyond DDR3-1333 timing bins.

Does the W632GG6MB-15 TR support on-die termination (ODT), and how is it configured?

Yes, the W632GG6MB-15 TR supports programmable on-die termination (ODT) with RTT_NOM values of 60 Ω, 120 Ω, or 240 Ω, set via MR1. It also supports dynamic ODT (Rtt_WR) during WRITE operations only, controlled by MR2. ODT is enabled synchronously via the ODT pin and affects DQ, DQS, and DM pins. The ZQ pin must be connected to a 240 Ω ±1 % resistor to ground for accurate impedance calibration.

What is the purpose of the RESET# pin on the W632GG6MB-15 TR, and is it mandatory?

The RESET# pin on the W632GG6MB-15 TR provides asynchronous, active-low reset for power-up initialization and functional recovery. It is mandatory for reliable boot sequencing: asserting RESET# for ≥200 ns after VDD/VDDQ stabilization triggers internal DLL reset, mode register clearing, and entry into a known precharge state. Omitting RESET# assertion may result in undefined behavior or failed initialization.

How does the W632GG6MB-15 TR handle refresh at elevated temperatures?

At temperatures above 85°C, the W632GG6MB-15 TR requires doubled refresh rate (tREFI = 3.9 µs instead of 7.8 µs) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 or by entering Manual Self-Refresh mode. Both methods are JEDEC-compliant and supported across the full −40°C to +95°C operating range without derating.

Can the W632GG6MB-15 TR be used in a system designed for DDR3L-1333 memory?

No - the W632GG6MB-15 TR is a standard DDR3 (1.5 V) device, not DDR3L (1.35 V). Its VDD/VDDQ specification is 1.5 V ± 0.075 V, and it is not characterized or guaranteed for operation at 1.35 V. Using it in a DDR3L-only system risks insufficient noise margin, timing violations, or failure to initialize. For DDR3L compatibility, a dedicated DDR3L part such as MT41K256M16HA-125:A must be selected.

W632GG6MB-15 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 667 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GG6MB-15 TR FAQ

1.How can I place an order for W632GG6MB-15 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6MB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6MB-15 TR reliable?

The price and inventory of W632GG6MB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6MB-15 TR is usually 5 days.

3.What payment methods are accepted for W632GG6MB-15 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6MB-15 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6MB-15 TR?

W632GG6MB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6MB-15 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6MB-15 TR?

For technical support, including W632GG6MB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6MB-15 TR requirements.

6.How does Aetrix verify that W632GG6MB-15 TR is sourced from the original manufacturer or authorized distributors?

All W632GG6MB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6MB-15 TR meets industry standards.

7.What is the process for return or replacement of W632GG6MB-15 TR?

All W632GG6MB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6MB-15 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6MB-15 TR part is unused and in its original packaging.

Return procedure for W632GG6MB-15 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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