Winbond Electronics Corporation W632GG6MB-18

Overview

W632GG6MB-18 from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at 933 MHz clock frequency with CAS Latency 13, VDD/VDDQ = 1.5 V ± 0.075 V, and SSTL_15 interface compliance. It serves as main system memory in embedded computing, industrial controllers, and network infrastructure where high-bandwidth, low-latency synchronous DRAM is required.

For engineers reviewing the W632GG6MB-18 datasheet, W632GG6MB-18 pinout, W632GG6MB-18 application, or W632GG6MB-18 equivalent, key selection considerations include its -11 speed grade binning, industrial temperature support (-40°C to 95°C), programmable CWL (5–7), on-die termination (RTT_NOM/RTT_WR), ZQ calibration, and asynchronous RESET# for robust power-up initialization.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous data strobes (DQS/DQS#) edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or burst chop 4 (BC4).

Functional features include dynamic ODT for write termination control, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and partial array self-refresh (PASR) for selective bank retention during low-power operation. All commands are sampled on CK rising edge; data I/O uses differential strobe referencing.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction. Ball map follows JEDEC-standard DDR3 layout with dedicated VDD/VSS, address/command, data, strobe, and control terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:A and IS43TR16256B-125KBL, W632GG6MB-18 uniquely combines DDR3-1866 performance, industrial temperature range, full JEDEC DDR3 feature set (MPR, write leveling, PASR, ASR), and asynchronous RESET#-making it optimal for high-reliability embedded systems requiring both speed and configurability.

Availability

W632GG6MB-18 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GG6MB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for mission-critical embedded systems demanding extended temperature operation, JEDEC compliance, and advanced power management features.

FAQ

What is the maximum supported data rate for W632GG6MB-18?

W632GG6MB-18 is rated for DDR3-1866 operation, delivering a maximum data transfer rate of 1866 MT/s at a clock frequency of 933 MHz. This corresponds to a minimum tRCD/tRP/tAA of 13.91 ns and CL = 13 timing. The device achieves this performance while maintaining full JEDEC DDR3 compliance and industrial temperature support (-40°C to 95°C).

Does W632GG6MB-18 support write leveling and how is it implemented?

Yes, W632GG6MB-18 supports hardware-assisted write leveling via its differential DQS/DQS# strobes and dedicated MPR functionality. During initialization, the memory controller adjusts per-byte DQS delay to align with DQ edges, using the MPR's predefined pattern to verify deskew. This capability is confirmed in Sections 8.9 and 8.10 of the official datasheet and is essential for reliable high-speed write timing calibration.

What package type and ball count does W632GG6MB-18 use?

W632GG6MB-18 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm height and 0.8 mm ball pitch. It is RoHS-compliant and lead-free. The 96-ball layout follows JEDEC-standard DDR3 pinout, including dedicated VDD/VSS, address/command, DQ/DQS, and control terminals such as RESET# and ZQ.

Can W632GG6MB-18 operate in self-refresh mode at extended temperatures?

Yes, W632GG6MB-18 supports self-refresh across its full industrial temperature range (-40°C to 95°C). At temperatures above 85°C, it requires either Manual Self-Refresh with Extended Temperature Range enabled (MR2 A6=0, A7=1) or Auto Self-Refresh (ASR) mode (MR2 A6=1) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention without external refresh commands.

What termination options are available on W632GG6MB-18?

W632GG6MB-18 provides programmable on-die termination (ODT) with RTT_NOM (nominal) and RTT_WR (write) settings, configurable via MR1 and MR2. It supports synchronous ODT, dynamic ODT during writes, and ZQ calibration against an external 240 Ω resistor to maintain 34 Ω driver and termination accuracy across voltage and temperature variations.