Winbond Electronics Corporation W632GG6NB-09

Overview

W632GG6NB-09 from Winbond Electronics is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-2133 (14-14-14) timing, operating at 1.5 V supply, supporting CAS Latency up to CL=14 and CWL=10, and packaged in a 96-ball VFBGA (7.5 × 13 mm). It serves as main system memory in embedded computing, industrial controllers, and network infrastructure requiring high-bandwidth, low-latency DRAM with extended temperature support up to 95°C.

For engineers reviewing the W632GG6NB-09 datasheet, W632GG6NB-09 pinout, W632GG6NB-09 application, or W632GG6NB-09 equivalent, key selection criteria include DDR3-2133 speed bin compliance, VFBGA-96 mechanical compatibility, on-die termination (ODT) programmability, ZQ calibration support, and industrial-grade thermal operation without derating.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture with differential CK/CK# clocking and bi-directional DQS/DQS# strobes aligned edge-to-read and center-to-write data. It supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in high-speed memory subsystems.

Functional features include asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for timing calibration bitstream readout, write leveling for per-lane skew compensation, and dual-mode refresh (Auto Refresh, Self-Refresh with ASR/PASR). All control inputs are registered on the rising edge of CK, synchronized to the differential clock crosspoint.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-273B standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GG6NB-09 delivers higher bandwidth (2133 vs. 1600 MT/s), extended temperature operation without derating, and integrated power optimization (PASR/ASR/ZQ), making it optimal for thermally demanding, high-performance embedded memory subsystems.

Availability

W632GG6NB-09 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed 95°C operational capability.

Supply support for W632GG6NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with ISO/TS 16949-certified manufacturing.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, robust signal integrity, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum supported CAS Latency for W632GG6NB-09 at DDR3-2133 speed?

The W632GG6NB-09 supports CAS Latency up to CL=14 when operating at its rated DDR3-2133 speed grade. This CL=14 setting corresponds to the 14-14-14 timing bin (tAA/tRCD/tRP = 13.09 ns minimum), and is required to meet JEDEC DDR3-2133 specification compliance. Lower CL values (e.g., CL=13 or CL=11) are also supported but do not enable the full 2133 MT/s data rate without violating timing margins.

Does W632GG6NB-09 support on-die termination (ODT), and what impedance values are available?

Yes, W632GG6NB-09 supports programmable on-die termination (ODT) for DQ, DQS, and DM signals. It offers three selectable nominal termination resistances (Rtt_NOM): 75 Ω, 150 Ω, and disabled (∞ Ω), plus dynamic ODT (Rtt_WR) during write operations with values of 75 Ω or 150 Ω. These settings are configured via Mode Register MR1 and MR2, and calibrated using the ZQ pin and external 240 Ω reference resistor.

What is the purpose of the ZQ pin on W632GG6NB-09, and how must it be connected?

The ZQ pin on W632GG6NB-09 provides a precision reference for calibrating output driver strength and ODT impedance. It must be connected to a single 240 Ω ±1% resistor tied to VSS (ground), with minimal trace length and no stubs. ZQ calibration occurs at power-up and can be retriggered via ZQCL or ZQCS commands to maintain ±1% impedance accuracy across voltage and temperature variations.

Can W632GG6NB-09 operate reliably at 95°C case temperature, and what features enable this?

Yes, W632GG6NB-09 is fully specified for continuous operation at 0°C ≤ TCASE ≤ 95°C with no derating. Key enablers include doubled Auto Refresh rate (tREFI = 3.9 µs) above 85°C, Auto Self-Refresh (ASR) mode activation via MR2, and validated IDD6 current of ≤15 mA in Normal Temperature Self-Refresh. These features ensure data retention and timing compliance under sustained thermal stress.

How does the Multi-Purpose Register (MPR) function in W632GG6NB-09, and what is its primary use case?

The Multi-Purpose Register (MPR) in W632GG6NB-09 stores a fixed 128-bit calibration pattern used for system-level timing margin validation. When enabled via MR3, a READ command returns this predefined bitstream instead of memory array data. Its primary use is write leveling and DQS-to-CK skew measurement during initialization-enabling precise per-lane delay adjustment essential for stable DDR3-2133 operation.