Winbond Electronics Corporation W632GG6NB09I

Overview

W632GG6NB09I from Winbond is a 2 Gbit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-2133 (14-14-14) operation at up to 1066 MHz clock frequency with CAS Latency 14, VDD/VDDQ = 1.5 V ± 0.075 V, and industrial temperature range of −40°C to +95°C. It serves as main system memory in embedded controllers, network processors, and industrial HMIs requiring high-bandwidth, low-latency synchronous DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W632GG6NB09I datasheet, W632GG6NB09I pinout, W632GG6NB09I application, or W632GG6NB09I equivalent, this page delivers verified DDR3 timing parameters, ball configuration, on-die termination behavior, power-down modes, and JEDEC-compliant industrial-grade thermal specifications - all confirmed for the exact -09I speed/temperature variant.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# and DQS/DQS# interfaces, and source-synchronous data capture. It supports programmable CAS Write Latency (CWL), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

The device integrates asynchronous RESET#, ZQ calibration using an external 240 Ω resistor, multi-purpose register (MPR) for timing calibration bitstream readout, and dual-mode ODT (synchronous and dynamic) with RTT_NOM, RTT_WR, and RTT_PARK configurable via mode registers MR1 and MR2.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout follows JEDEC MO-255 standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:A and IS43TR16256B-125KBL, the W632GG6NB09I uniquely delivers DDR3-2133 performance at industrial temperature with full JEDEC calibration features (write leveling, MPR, ZQ), making it optimal for bandwidth-critical, thermally demanding embedded systems requiring long-term reliability.

Availability

W632GG6NB09I is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging controllers, and ruggedized edge AI gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6NB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, JEDEC compliance, and robust signal integrity features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum clock frequency supported by W632GG6NB09I?

The W632GG6NB09I supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 operation (2133 MT/s). This is validated for the -09I speed grade under industrial temperature conditions (−40°C to +95°C) with CL=14 and tAA/tRCD/tRP = 14-14-14 timing. The device maintains full JEDEC AC/DC specifications across this range when powered at VDD/VDDQ = 1.5 V ± 0.075 V.

Does W632GG6NB09I support Auto Self-Refresh (ASR) and how is it configured?

Yes, W632GG6NB09I supports Auto Self-Refresh (ASR) for operation above 85°C. It is enabled by setting MR2[A6] = 1b; MR2[A7] is don't care. When activated, ASR doubles the refresh rate (tREFI = 3.9 µs) automatically without host intervention, ensuring data retention at T_CASE up to +95°C. This eliminates the need for manual refresh command scheduling in thermally variable environments.

What package type and ball count does W632GG6NB09I use?

W632GG6NB09I uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. It complies with JEDEC MO-255 and is lead-free/RoHS compliant. The 96-ball layout includes dedicated DQ, DQS/DQS#, address, command, and power/ground terminals optimized for DDR3 signal integrity and thermal dissipation.

How does write leveling work on W632GG6NB09I and what is required to implement it?

Write leveling on W632GG6NB09I calibrates DQS-to-CK skew using the Multi-Purpose Register (MPR) pattern. The controller issues a special MRS command to enter write leveling mode, then adjusts DQS delay until the DRAM echoes back the expected MPR bitstream on DQ. Implementation requires controller support for MPR read, DQS delay tuning, and proper ZQ calibration before leveling begins - all documented in sections 8.9 and 8.10 of the W632GG6NB datasheet.

What are the key differences between W632GG6NB09I and the commercial-grade W632GG6NB-09?

The W632GG6NB09I extends the operating temperature range to −40°C to +95°C (vs. 0°C to +95°C for -09) while maintaining identical DDR3-2133 (14-14-14) timing, electrical specs, and pinout. Both share the same VFBGA-96 package and feature set, but W632GG6NB09I undergoes additional screening for industrial reliability and supports ASR/PASR across its full temperature range - critical for uncontrolled environmental deployments.