Winbond Electronics Corporation W632GG6NB09I TR

Overview

W632GG6NB09I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM with industrial temperature support (−40°C to +95°C), DDR3-2133 speed grade (14-14-14 timing), 1.5V VDD/VDDQ supply, and VFBGA-96 (7.5 × 13 mm) packaging. It delivers 2133 MT/s data rates in systems requiring high-bandwidth memory for embedded controllers, networking processors, and industrial HMIs.

For engineers reviewing the W632GG6NB09I TR datasheet, W632GG6NB09I TR pinout, W632GG6NB09I TR application, or W632GG6NB09I TR equivalent, key selection factors include its DDR3-2133 CL14 timing compliance, on-die termination (ODT) with dynamic Rtt_WR support, ZQ calibration capability, and industrial-grade thermal reliability across full JEDEC AC/DC specifications.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and interleaved burst operations. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for optimized command bus efficiency.

The device uses differential CK/CK# inputs synchronized at the crosspoint and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ–DQS–CK timing, while MPR readout and write leveling provide system-level timing calibration for robust signal integrity in high-speed layouts.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-273B standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6NB09I TR, IS43TR16256B-213JBL offers identical speed and temperature but demands ballout-aware layout changes, while MT41K256M16HA-125:E trades 2133 MT/s performance for 1.35V operation and reduced feature set-making W632GG6NB09I TR the optimal choice for industrial DDR3-2133 implementations requiring full JEDEC compliance and advanced calibration features.

Availability

W632GG6NB09I TR is available at Aetrix Electronics and suitable for industrial HMIs, network packet processors, medical imaging controllers, and ruggedized edge gateways requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W632GG6NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GG6NB09I TR belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for high-reliability embedded systems demanding extended temperature operation, JEDEC-compliant timing, and advanced signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum data rate supported by the W632GG6NB09I TR?

The W632GG6NB09I TR supports DDR3-2133 operation at 2133 MT/s, corresponding to a 1066 MHz differential clock frequency. Its tCK(AVG) minimum is 0.938 ns at CL14/CWL10, and it meets all JEDEC DDR3-2133 AC timing requirements including 14-14-14 (tRCD/tRP/tAA) under industrial temperature conditions.

Does the W632GG6NB09I TR support automatic self-refresh (ASR) mode?

Yes, the W632GG6NB09I TR supports Auto Self-Refresh (ASR) mode via MR2 bit A6. When enabled, ASR automatically doubles the refresh rate to 3.9 µS at temperatures above 85°C, eliminating the need for host controller intervention during thermal excursions up to +95°C case temperature.

How does write leveling function on the W632GG6NB09I TR?

Write leveling on the W632GG6NB09I TR is initiated by the memory controller sending a specific MRS command to enter write leveling mode. The DRAM then outputs a fixed pattern on DQS while the controller adjusts DQS launch delay until edge detection confirms alignment with CK, compensating for board-level skew between clock and strobe nets.

What termination resistances are supported by the on-die termination (ODT) in the W632GG6NB09I TR?

The W632GG6NB09I TR supports programmable ODT values of 120 Ω, 60 Ω, 40 Ω, and 30 Ω for Rtt_NOM (read termination) and 120 Ω or 60 Ω for Rtt_WR (write termination), configured via MR1 and MR2. These values are calibrated using the external 240 Ω ZQ reference resistor.

Is the W632GG6NB09I TR pin-compatible with other Winbond DDR3 SDRAMs in the same VFBGA-96 package?

Yes, the W632GG6NB09I TR shares identical ball assignment and electrical interface with other members of the W632GG6NB family (e.g., W632GG6NB-11, W632GG6NB11I), enabling direct substitution within the same speed grade and temperature range without PCB modification.