Winbond Electronics Corporation W632GG6NB09J

Overview

W632GG6NB09J from Winbond Electronics is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-2133 (14-14-14) operation at up to 1066 MHz, with industrial-plus temperature range (–40°C to +105°C), VDD/VDDQ = 1.5V ± 0.075V, and SSTL_15 interface compliance. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring high-bandwidth, low-latency DRAM with robust thermal reliability.

For engineers reviewing the W632GG6NB09J datasheet, W632GG6NB09J pinout, W632GG6NB09J application, or W632GG6NB09J equivalent, this device delivers verified DDR3-2133 timing (tAA ≤ 13.09 ns, tRCD ≤ 13.09 ns, tRP ≤ 13.09 ns), programmable CAS Write Latency (CWL = 5–10), on-die termination (RTT_NOM/RTT_WR), ZQ calibration, and asynchronous RESET#-all validated for extended-temperature system integration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL–1, CL–2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional operation includes ZQ calibration for output driver and ODT impedance tuning, dynamic ODT (Rtt_WR) during writes, Multi-Purpose Register (MPR) for system-level timing calibration, and write leveling for DQ-to-DQS skew compensation. The device requires asynchronous RESET# assertion for power-up initialization and supports both manual and auto self-refresh (ASR) modes under extended temperature conditions.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free); 96-ball array with 0.8 mm pitch arranged in 9 × 11 grid (corner balls A1, A11, J1, J11 omitted).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16256B-213JBL and MT41K256M16HA-125:E, W632GG6NB09J uniquely combines DDR3-2133 performance, industrial-plus temperature support, asynchronous RESET#, write leveling, and MPR-enabling drop-in integration into thermally demanding, high-bandwidth embedded systems without layout or firmware revision.

Availability

W632GG6NB09J is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed extended-temperature qualification.

Supply support for W632GG6NB09J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial DDR3 SDRAM product line, designed specifically for extended-temperature, high-reliability embedded applications where JEDEC compliance, thermal robustness, and feature-rich calibration support are critical.

FAQ

What is the maximum operating frequency and corresponding timing specification for W632GG6NB09J?

W632GG6NB09J is rated for DDR3-2133 operation with a maximum clock frequency of 1066 MHz and JEDEC-compliant timing of CL=14, tRCD=tRP=tAA=14 clock cycles (13.09 ns minimum). This speed grade is validated across the full –40°C to +105°C case temperature range when used with ASR or Manual Self-Refresh mode above 95°C.

Does W632GG6NB09J support asynchronous reset, and how is it used during initialization?

Yes, W632GG6NB09J includes an active-low RESET# pin that must be asserted for ≥200 ns after VDD/VDDQ stabilize to initiate power-up initialization. This asynchronous reset sequence configures internal registers, locks the DLL, and prepares the device for mode register setup-ensuring deterministic behavior before any command is issued.

How does W632GG6NB09J handle thermal derating above 95°C case temperature?

At case temperatures above 95°C, W632GG6NB09J requires either Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b or 11b) or Manual Self-Refresh mode (MR2[7:6] = 01b) to maintain the shortened 3.9 µs refresh interval. Failure to enable one of these modes results in data retention failure due to insufficient refresh rate.

What termination options are available on W632GG6NB09J, and how are they controlled?

W632GG6NB09J supports programmable on-die termination (ODT) with RTT_NOM values of 60 Ω, 120 Ω, or 40 Ω (set via MR1), and dynamic Rtt_WR values of 60 Ω or 120 Ω (set via MR2). ODT is enabled/disabled via the ODT pin and configured through mode registers; ZQ calibration using an external 240 Ω resistor ensures impedance accuracy.

Is write leveling supported on W632GG6NB09J, and what is its implementation method?

Yes, W632GG6NB09J supports hardware-assisted write leveling using its Multi-Purpose Register (MPR). During write leveling mode, the DRAM outputs a predefined MPR pattern on DQ pins while the controller adjusts DQS delay to align strobe edges with DQ valid windows-enabling precise per-lane timing calibration without external test equipment.