Winbond Electronics Corporation W632GG6NB-09 TR

Overview

W632GG6NB-09 TR from Winbond Electronics is a 2 Gbit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR3-2133 (14-14-14) speed grade with 1.5 V supply, SSTL_15 interface, and VFBGA-96 package. It delivers 2133 MT/s data transfer rates and integrates on-die termination (ODT), ZQ calibration, programmable CAS Write Latency (CWL), and asynchronous RESET# for reliable memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W632GG6NB-09 TR datasheet, W632GG6NB-09 TR pinout, W632GG6NB-09 TR application, or W632GG6NB-09 TR equivalent, key selection considerations include its DDR3-2133 timing compliance (tAA ≤ 13.09 ns, tRCD ≤ 13.09 ns), -40°C to 95°C industrial temperature range, VFBGA-96 mechanical footprint, and support for write leveling, MPR-based calibration, and dynamic ODT for signal integrity in high-speed memory interfaces.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access and interleaved burst operations. Its differential CK/CK# clocking synchronizes all command/address inputs at the crosspoint, while bi-directional DQS/DQS# strobes center-align write data and edge-align read data relative to the strobe.

The device supports programmable CAS Latency (CL = 5–14), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–10), with read latency RL = AL + CL and write latency WL = AL + CWL. It includes ZQ calibration for output driver and ODT impedance tuning, dynamic ODT mode for write-time termination control, and multi-purpose register (MPR) for system-level timing calibration pattern readout.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm body size, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Compliant with JEDEC MO-276AB standard and RoHS requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6NB-09 TR, MT41K256M16HA-125:A trades 2133 MT/s performance for 1.35 V operation and tighter thermal envelope, while IS43TR16256B-125KBL omits advanced features like dynamic ODT and MPR-making W632GG6NB-09 TR the only option among the three supporting full DDR3-2133 timing, write leveling, and system-level calibration.

Availability

W632GG6NB-09 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GG6NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust signal integrity features (ZQ, write leveling, MPR), and JEDEC-compliant reliability in mission-critical embedded systems.

FAQ

What is the maximum data rate supported by the W632GG6NB-09 TR?

The W632GG6NB-09 TR supports up to 2133 MT/s (DDR3-2133) with CL=14 and tCK = 0.938 ns minimum clock period. This speed grade is validated under industrial temperature conditions (−40°C to 95°C) and requires strict adherence to JEDEC AC timing parameters including tAA ≤ 13.09 ns and tRCD ≤ 13.09 ns. The W632GG6NB-09 TR achieves this performance using its 8-bit prefetch architecture and DLL-aligned DQS-to-clock relationship.

Does the W632GG6NB-09 TR support write leveling, and how is it implemented?

Yes, the W632GG6NB-09 TR supports hardware-assisted write leveling via dedicated command sequences and DQS phase adjustment logic. During write leveling mode, the DRAM returns a fixed pattern on DQ while the controller adjusts DQS delay per byte lane to center-align DQS edges with CK. This feature is enabled through MR1 bit A6 and relies on the W632GG6NB-09 TR's internal DLL and MPR functionality to ensure timing closure at 2133 MT/s. The procedure is defined in section 8.9 of the W632GG6NB-09 TR datasheet.

What package type and ball count does the W632GG6NB-09 TR use?

The W632GG6NB-09 TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. It conforms to JEDEC MO-276AB and is lead-free/RoHS compliant. All 96 balls are assigned to address, data, control, power, ground, and reference functions as detailed in the W632GG6NB-09 TR ball configuration table (section 5 of the datasheet), with no unused or NC balls.

How does the W632GG6NB-09 TR handle refresh at elevated temperatures?

At case temperatures above 85°C, the W632GG6NB-09 TR requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2[A6]=1 or by entering Manual Self-Refresh with Extended Temperature Range (MR2[A6]=0, MR2[A7]=1). The W632GG6NB-09 TR's specification mandates this behavior between 95°C and 105°C, and the controller must issue refresh commands accordingly to prevent data loss.

What termination options are available on the W632GG6NB-09 TR, and how are they configured?

The W632GG6NB-09 TR provides programmable on-die termination (ODT) with three selectable nominal values (60 Ω, 120 Ω, 240 Ω) via MR1 and MR2, plus dynamic ODT (Rtt_WR) for write-time termination. ODT is configured using mode registers and controlled by the ODT pin; synchronous ODT activates on command, while dynamic ODT engages automatically during WRITE bursts. These settings apply to DQ, DQS/DQS#, and DM lines, and are calibrated using the W632GG6NB-09 TR's integrated ZQ circuit with an external 240 Ω resistor.