Winbond Electronics Corporation W632GG6NB-11

Overview

W632GG6NB-11 from Winbond Electronics is a 2Gb DDR3 SDRAM organized as 16M × 8 banks × 16-bit, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5V supply, and rated for 0°C to 95°C case temperature. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–9), and features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for system initialization in embedded and industrial memory subsystems.

For engineers reviewing the W632GG6NB-11 datasheet, W632GG6NB-11 pinout, W632GG6NB-11 application, or W632GG6NB-11 equivalent, key selection considerations include its DDR3-1866 speed bin, VFBGA-96 package compatibility, SSTL_15 interface compliance, and support for write leveling, dynamic ODT, and partial array self-refresh in space-constrained, thermally stable memory designs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# inputs synchronized at the cross-point for command/address latching. Its bi-directional DQS/DQS# strobes are edge-aligned on reads and center-aligned on writes, with DLL alignment of DQ and DQS transitions to CK.

Functional operation includes programmable mode registers (MR0–MR3) controlling burst length (BL8/BC4), additive latency (AL = 0, CL−1, CL−2), auto-precharge, PASR, ASR, and dynamic ODT (Rtt_WR). The device supports ZQ calibration using an external 240Ω resistor and provides MPR-based system timing calibration via predefined read patterns.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; 1.0 mm maximum thickness; RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W632GG6NB-11 offers optimal balance of DDR3-1866 performance, 96-ball compactness, and commercial-extended temperature support without DDR3L voltage constraints or larger package footprint.

Availability

W632GG6NB-11 is available at Aetrix Electronics and suitable for industrial HMI, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1866 performance.

Supply support for W632GG6NB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's high-reliability DDR3 SDRAM product line, designed specifically for embedded systems demanding robust thermal performance, JEDEC compliance, and advanced power management features like PASR and dynamic ODT.

FAQ

What DDR3 speed bin does the W632GG6NB-11 support?

The W632GG6NB-11 supports the DDR3-1866 speed bin with 13-13-13 timing (tRCD/tRP/tRAS), operating at a 933 MHz clock frequency and delivering 1866 MT/s data rates. It is validated for CL settings from 5 to 11 and CWL from 5 to 9, with full AC/DC specifications over 0°C to 95°C case temperature.

Does the W632GG6NB-11 support write leveling and dynamic ODT?

Yes, the W632GG6NB-11 supports both write leveling and dynamic ODT (Rtt_WR). Write leveling enables precise DQS-to-CK skew calibration during initialization, while dynamic ODT activates on-die termination only during write operations to improve signal integrity on shared DQ lines - both features are confirmed in the device's functional description and MR2/MR3 programming sections.

What package type and ball count does the W632GG6NB-11 use?

The W632GG6NB-11 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. This RoHS-compliant, lead-free package is specified in Section 11 of the datasheet and matches JEDEC MO-270AB standard for DDR3 SDRAM packaging.

Can the W632GG6NB-11 operate in partial array self-refresh (PASR) mode?

Yes, the W632GG6NB-11 supports Partial Array Self-Refresh (PASR) as defined in MR2 bitfield A2:A0. PASR allows selective refresh of only active memory banks, reducing self-refresh current by up to 50% compared to full-array refresh - a confirmed feature listed in Section 2 (Features) and Section 8.3.3.1 of the datasheet.

What is the supply voltage requirement for the W632GG6NB-11?

The W632GG6NB-11 requires VDD and VDDQ at 1.5 V ± 0.075 V, as specified in Section 2 (Features) and Section 10.3.1 (Recommended DC Operating Conditions). It is not DDR3L-compatible and must be powered from a dedicated 1.5 V rail meeting JEDEC DDR3 voltage tolerance and ripple requirements.