Winbond Electronics Corporation W632GG6NB11I

Overview

W632GG6NB11I from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1866 (13-13-13) timing, operating at 933 MHz clock frequency with CAS Latency 13, and rated for industrial temperature range (–40°C to +95°C). It features eight internal banks, 8-bit prefetch architecture, and supports ZQ calibration, programmable CWL, dynamic ODT, and asynchronous RESET# for robust system initialization in embedded and networking memory subsystems.

For engineers reviewing the W632GG6NB11I datasheet, W632GG6NB11I pinout, W632GG6NB11I application, or W632GG6NB11I equivalent, this page delivers verified DDR3 timing parameters, ball configuration, ODT control modes, power-down behavior, and industrial-grade thermal validation - critical for memory controller interface design, signal integrity planning, and long-life BOM stability.

Technical Context

This DDR3 SDRAM implements source-synchronous I/O using differential DQS/DQS# strobes aligned to data edges during reads and center-aligned during writes, with DLL-based alignment of DQ and DQS transitions to CK/CK#. All commands are latched on the rising edge of CK, synchronized to the cross-point of CK and CK#.

It supports programmable additive latency (AL = 0, CL–1, CL–2), posted CAS, auto-precharge, burst lengths BL8 and BC4, and multi-purpose register (MPR) readout for system-level timing calibration. Refresh modes include standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR), with mandatory ASR or manual self-refresh activation above 85°C.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. Ball layout optimized for DDR3 routing constraints including matched-length DQ/DQS groups and dedicated VSS/VDD decoupling balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GG6NB11I delivers higher bandwidth (1866 vs. 1600 MT/s), integrated write leveling and MPR for automated timing closure, and extended thermal reliability up to 95°C with ASR-making it optimal for performance-critical industrial and networking memory interfaces.

Availability

W632GG6NB11I is available at Aetrix Electronics and suitable for networking equipment, industrial HMIs, medical imaging controllers, and video surveillance DVRs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant timing rigor, and advanced signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum data rate supported by the W632GG6NB11I?

The W632GG6NB11I supports a maximum data rate of 1866 MT/s (DDR3-1866), corresponding to a 933 MHz clock frequency with 13-13-13 timing (tAA/tRCD/tRP = 13.91 ns min). This rating is fully validated across the industrial temperature range (–40°C to +95°C) and requires proper PCB layout, termination, and controller-level training sequences such as write leveling.

Does the W632GG6NB11I support write leveling, and how is it implemented?

Yes, the W632GG6NB11I supports hardware-assisted write leveling using its Multi-Purpose Register (MPR). During write leveling, the memory controller asserts a specific MRS command to place the device into MPR mode, then reads a predefined 128-bit calibration pattern via DQ/DQS. The controller adjusts DQS delay until valid pattern capture occurs, ensuring optimal DQS-to-CK alignment for reliable high-speed writes.

What refresh mechanism is required when operating the W632GG6NB11I at 95°C case temperature?

When operating the W632GG6NB11I at case temperatures above 85°C (up to 95°C), the refresh interval must be halved to tREFI = 3.9 µs. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 = 1, or by entering Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0, A7 = 1). Standard periodic refresh is insufficient at this temperature.

How does dynamic ODT (Rtt_WR) function in the W632GG6NB11I?

In the W632GG6NB11I, dynamic ODT (Rtt_WR) activates on-die termination only during write operations, using impedance values programmed in MR2. This reduces signal reflections on the DQ/DQS bus during writes while keeping terminations disabled during reads-improving read eye opening and lowering overall power consumption compared to always-on ODT configurations.

What package type and ball count does the W632GG6NB11I use?

The W632GG6NB11I uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch. It is RoHS-compliant and lead-free, and its ball map follows JEDEC-standard DDR3 SDRAM pinout for address, command, data, strobe, and power/ground assignments.