Winbond Electronics Corporation W632GG6NB11I TR

Overview

W632GG6NB11I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1866 speed (13-13-13 CL), with industrial temperature range (-40°C to +95°C), 1.5V VDD/VDDQ supply, and VFBGA-96 (7.5 × 13 mm) packaging. It supports programmable CAS Latency (CL = 5–13), CAS Write Latency (CWL = 5–9), ZQ calibration, on-die termination (ODT), and asynchronous RESET# for reliable memory subsystems in networking and industrial control.

For engineers reviewing the W632GG6NB11I TR datasheet, W632GG6NB11I TR pinout, W632GG6NB11I TR application, or W632GG6NB11I TR equivalent, this page delivers verified timing parameters, ball configuration, ODT behavior, power-down modes, and JEDEC-compliant DDR3-1866 operation under extended temperature conditions - critical for high-reliability embedded memory design and BOM continuity planning.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and interleaved burst operations. Its differential CK/CK# clocking and DQS/DQS# strobes support source-synchronous double-data-rate transfers, while DLL alignment ensures precise DQ-DQS timing across process/voltage/temperature variations.

Functional control is managed via mode registers MR0–MR3, supporting programmable features including additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and write leveling. The device uses SSTL_15 I/O interface and requires external 240Ω ±1% ZQ reference resistor for output driver and ODT calibration.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; JEDEC-standard DDR3 ball map supporting x16 organization, differential clocks, and bidirectional DQS pairs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GG6NB11I TR uniquely combines DDR3-1866 performance, full industrial temperature range, write leveling, and dynamic ODT - making it optimal for thermally demanding, high-bandwidth embedded systems where timing margin and long-term reliability are non-negotiable.

Availability

W632GG6NB11I TR is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, and medical imaging systems requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W632GG6NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W632GG6NB belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for mission-critical embedded applications demanding extended temperature operation, JEDEC compliance, and long-lifecycle support.

FAQ

What is the maximum supported data rate for W632GG6NB11I TR?

W632GG6NB11I TR is rated for DDR3-1866 operation (13-13-13 timing), corresponding to a 933 MHz clock frequency and 1866 MT/s transfer rate. This speed grade is validated across the full industrial temperature range (-40°C to +95°C) and requires compliant layout, termination, and power delivery per JEDEC JESD79-3F specification. W632GG6NB11I TR does not support DDR3-2133 operation.

Does W632GG6NB11I TR support write leveling, and how is it implemented?

Yes, W632GG6NB11I TR supports hardware-assisted write leveling per JEDEC DDR3 specification. It uses the MPR (Multi-Purpose Register) to output a predefined bit pattern while the controller adjusts DQS gating delay. The process is initiated via MR3, and the device responds with calibrated strobe timing information - critical for achieving timing closure at DDR3-1866 speeds. W632GG6NB11I TR requires external ZQ resistor and proper DQS-DQ routing to execute write leveling successfully.

What temperature range is guaranteed for W632GG6NB11I TR?

W632GG6NB11I TR is specified for industrial operation from -40°C to +95°C case temperature (TCASE). This includes full AC/DC parameter compliance across the range, with mandatory tREFI = 3.9 µs refresh interval above 85°C. The "I" suffix explicitly denotes industrial qualification, distinguishing it from commercial-grade variants like W632GG6NB-11 (0°C to +95°C). W632GG6NB11I TR is not rated for 105°C operation - that capability is reserved for "J" suffix parts.

How does dynamic ODT (Rtt_WR) function in W632GG6NB11I TR?

In W632GG6NB11I TR, dynamic ODT (Rtt_WR) activates programmable termination (120 Ω, 60 Ω, or 40 Ω) only during write bursts on DQ/DQS lines, reducing signal reflections without increasing standby power. It is configured via MR2 and triggered by the WRITE command, automatically disabling after burst completion. This differs from static ODT (Rtt_NOM), which remains active during reads and idle periods. W632GG6NB11I TR supports both modes independently for optimal signal integrity across mixed-read/write workloads.

Is W632GG6NB11I TR pin-compatible with other Winbond DDR3 devices in the same density and package?

W632GG6NB11I TR uses the standard JEDEC DDR3 x16 VFBGA-96 ballout (7.5 × 13 mm, 0.8 mm pitch), ensuring mechanical and electrical compatibility with other Winbond 2Gb DDR3 SDRAMs in the same family (e.g., W632GG6NB-11, W632GG6NB11J). Ball functions (A0–A14, BA0–BA2, DQ0–DQ15, DQS/DQS#, CK/CK#, ODT, RESET#, ZQ) match JEDEC specification exactly. However, speed binning, temperature grade, and feature enablement (e.g., ASR/PASR) differ - firmware and timing parameters must be validated per part number.