My Inquiry
My Account
Winbond Electronics Corporation W632GG6NB-11 TR
- Part No.:
- W632GG6NB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GG6NB-11 TR.pdf
- Description:
- IC DRAM 2GBIT SSTL 15 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,980
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GG6NB-11 TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1866 (13-13-13) timing, operating at 1.5V supply, supporting CAS Latency 5–11 and programmable CWL 5–9, used in embedded computing, industrial controllers, and network infrastructure memory subsystems.
For engineers reviewing the W632GG6NB-11 TR datasheet, W632GG6NB-11 TR pinout, W632GG6NB-11 TR application, or W632GG6NB-11 TR equivalent, key selection criteria include DDR3-1866 speed bin compliance, industrial temperature range (0°C to 95°C), VFBGA-96 package compatibility, and support for ZQ calibration, dynamic ODT, and write leveling.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# and DQS/DQS# interfaces, and DLL-based data strobe alignment. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or burst chop 4 (BC4).
Functional operation includes synchronous command decoding on CK rising edge, source-synchronous I/O referencing DQS edges, on-die termination (ODT) with programmable RTT values (60Ω, 120Ω, 40Ω), and system-level calibration via MPR read pattern and write leveling-enabling robust signal integrity in high-speed memory channels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space |
| Data Rate | DDR3-1866 (13-13-13), delivering 1866 MT/s with tCK = 1.07 ns min (CL13/CWL9) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 75 mV, compatible with standard DDR3 power delivery networks |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C, validated for industrial-grade thermal environments without derating |
| CAS Latency Range | CL = 5 to 11, allowing flexible timing trade-offs between latency and bandwidth in controller firmware |
| CAS Write Latency | CWL = 5 to 9, synchronized to frequency via mode register MR2, critical for write timing closure |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), doubling to 3.9 µs above 85°C when ASR enabled per MR2 settings |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height), RoHS-compliant, lead-free, with 0.8 mm ball pitch |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 1.0 mm profile, and 0.8 mm ball pitch. Ball layout conforms to JEDEC MO-245AC standard for DDR3 SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits for bank and page access; A12/A13 used for bank select in 8-bank mode |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; decoded synchronously with ACT command |
| CK / CK# | Differential Clock | Edge-aligned input clock pair; all commands latched at CK rising / CK# falling crosspoint |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; SSTL_15 compatible, source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Strobe | Read: edge-aligned with DQ; Write: center-aligned with DQ; enables precise timing capture |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; active-high, sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Active-low initialization signal; triggers power-up sequence and clears internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM (60Ω), RTT_WR (40Ω), or RTT_PARK (120Ω) per MR1/MR2 |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ± 1% external resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | Supports CWL = 5–9 per frequency bin, enabling precise write timing alignment across DDR3-1333 to DDR3-2133 speeds |
| Write Leveling | Hardware-assisted calibration mode that adjusts DQS-to-CK skew at system level, reducing setup/hold violations in high-speed layouts |
| Dynamic ODT (Rtt_WR) | Enables 40 Ω termination during writes only, improving signal integrity on bidirectional DQ bus without affecting read eye opening |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor, correcting VDD/VDDQ and temperature drift in output drivers and ODT |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via READ command, used for system-level timing margin verification and training |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks, lowering IDD6 by up to 40% in partial-memory-active systems |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic in programmable logic controllers requiring low-latency, reliable memory access under extended temperature cycling. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O data buffering, interfacing directly with ARM Cortex-M7 or RISC-V SoC memory controllers. Use Value: DDR3-1866 bandwidth (3.7 GB/s peak) and CL11 timing ensure sub-100 ns average read latency while maintaining 95°C operational stability without throttling. |
Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches handling 10Gbps+ line rates with deep queue requirements. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple traffic manager engines and MAC interfaces via bank interleaving. Use Value: Eight independent banks and tRC = 47.9 ns enable >95% bus utilization under sustained random read/write workloads, minimizing packet drop during congestion. |
| Medical Imaging Data Cache | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Temporary storage of raw sensor frames (e.g., ultrasound, MRI) prior to FPGA-accelerated reconstruction, demanding burst reliability and low soft-error rate. IC Role / Device Role / Timing Role: High-bandwidth frame cache between ADC interface and processing pipeline, leveraging BL8 reads and auto-precharge for sequential access efficiency. Use Value: VFBGA-96 mechanical stability and 1.5V SSTL signaling reduce jitter-induced bit errors; ZQ calibration maintains signal integrity over 10,000+ thermal cycles. |
Use Scenario: Storage of high-speed digital test patterns in semiconductor ATE systems requiring nanosecond-level timing repeatability and fast pattern switching. IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to tester clock domain via write leveling and MPR-based margin validation. Use Value: Programmable AL and CWL allow precise write strobe positioning; tAA = 13.91 ns (CL13) ensures <14 ns address-to-data delay for tight pattern loop timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | 2Gb DDR3L (1.35V), -125 speed grade (DDR3-1600), 96-ball FBGA, supports CL=9–11 but no PASR or MPR | Limited to 85°C max case temperature; lacks write leveling and MPR, requiring external timing margining | Choose for cost-sensitive, lower-power DDR3L designs where 1.35V operation and reduced IDD are prioritized over extended temp or calibration features |
| IS43TR16256B-125KBL | 2Gb DDR3, -125 speed grade (DDR3-1600), same VFBGA-96, supports CL=9–11, includes ZQ and ODT but no write leveling or PASR | Rated for 0°C–95°C, but AC specs validated only to 85°C; no dynamic ODT or ASR support | Use when matching pinout and basic DDR3-1600 performance is sufficient, and system-level calibration is handled externally |
Compared with W632GG6NB-11 TR, MT41K256M16HA-125:E offers lower voltage operation but sacrifices industrial temperature margin and calibration capabilities, while IS43TR16256B-125KBL matches form factor and temperature range but omits write leveling and dynamic ODT-making W632GG6NB-11 TR preferable for designs requiring robust high-speed timing closure and extended thermal resilience.
Availability
W632GG6NB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for W632GG6NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W632GG6NB-11 TR belongs to Winbond's high-reliability DDR3 SDRAM product line, designed specifically for industrial and networking applications demanding extended temperature operation, advanced calibration features, and JEDEC-compliant interoperability.
FAQ
What is the maximum supported CAS Latency for W632GG6NB-11 TR at DDR3-1866 speed?
The W632GG6NB-11 TR supports CAS Latency (CL) values from 5 to 11 when operating in DDR3-1866 mode. CL11 corresponds to the highest latency setting validated for this speed bin, with tAA = 13.91 ns minimum and tRCD/tRP = 13.91 ns minimum per JEDEC specification. CL13 and CL14 are not supported in the -11 speed grade.
Does W632GG6NB-11 TR support write leveling, and how is it implemented?
Yes, W632GG6NB-11 TR supports hardware-assisted write leveling per JEDEC DDR3 standard. It uses the DQS strobe in conjunction with internal calibration logic to adjust DQS-to-CK skew during initialization. The process requires issuing a specific MRS command to enter write leveling mode, followed by toggling DQS while monitoring DQ feedback on the memory controller side.
What is the purpose of the ZQ pin on W632GG6NB-11 TR, and what external component is required?
The ZQ pin on W632GG6NB-11 TR connects to a precision 240 Ω ±1% external resistor to ground, enabling factory and runtime calibration of output driver strength and on-die termination (ODT) impedances. This calibration compensates for process, voltage, and temperature variations, ensuring consistent SSTL_15 signal integrity across operating conditions.
Can W632GG6NB-11 TR operate in temperatures above 85°C, and what configuration is needed?
Yes, W632GG6NB-11 TR is rated for 0°C ≤ TCASE ≤ 95°C. To maintain full JEDEC AC/DC specifications above 85°C, Auto Self-Refresh (ASR) must be enabled via MR2 (A6 = 1b), which doubles refresh frequency to tREFI = 3.9 µS. Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b) is also supported.
What DDR3 features distinguish W632GG6NB-11 TR from standard DDR3 SDRAMs?
W632GG6NB-11 TR includes industrial-temperature validation (up to 95°C), Partial Array Self-Refresh (PASR), Multi-Purpose Register (MPR) for system margin testing, and full support for write leveling and dynamic ODT (Rtt_WR). These features enhance reliability, signal integrity, and power efficiency in thermally demanding or high-speed memory subsystems beyond baseline DDR3 compliance.
W632GG6NB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GG6NB-11 TR FAQ
1.How can I place an order for W632GG6NB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG6NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG6NB-11 TR reliable?
The price and inventory of W632GG6NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6NB-11 TR is usually 5 days.
3.What payment methods are accepted for W632GG6NB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6NB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG6NB-11 TR?
W632GG6NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG6NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG6NB-11 TR?
For technical support, including W632GG6NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6NB-11 TR requirements.
6.How does Aetrix verify that W632GG6NB-11 TR is sourced from the original manufacturer or authorized distributors?
All W632GG6NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6NB-11 TR meets industry standards.
7.What is the process for return or replacement of W632GG6NB-11 TR?
All W632GG6NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6NB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG6NB-11 TR part is unused and in its original packaging.
Return procedure for W632GG6NB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG6NB-11 TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
