Winbond Electronics Corporation W632GG6NB-12

Overview

W632GG6NB-12 from Winbond Electronics is a 2 Gbit DDR3 SDRAM organized as 16M × 8 banks × 16 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 1.5 V supply, and rated for 0°C ≤ TCASE ≤ 95°C. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), and features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for system initialization. It is used in embedded computing, industrial control, and network infrastructure memory subsystems.

For engineers reviewing the W632GG6NB-12 datasheet, W632GG6NB-12 pinout, W632GG6NB-12 application, or W632GG6NB-12 equivalent, key selection considerations include its DDR3-1600 speed bin, VFBGA-96 package, SSTL_15 interface compatibility, and support for dynamic ODT, write leveling, and partial array self-refresh (PASR) in thermally constrained environments.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# and DQS/DQS# interfaces enforce source-synchronous timing, while DLL alignment ensures precise DQ-DQS-clock phase matching across process, voltage, and temperature variations.

Command decoding occurs on every rising edge of CK, with data and DM referenced to both edges of DQS/DQS#. The device supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), enabling optimized command bus utilization, and includes dedicated mode registers (MR0–MR3) for configuring burst length, ODT states, PASR, ASR, and MPR read patterns.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch. Ball layout conforms to JEDEC MO-245AC standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6NB-12, MT41K128M16JT-125:K offers lower voltage operation at the expense of JEDEC DDR3 compatibility, while IS43TR16128B-125KBL matches pinout and speed but omits advanced power management features essential for unattended industrial deployments.

Availability

W632GG6NB-12 is available at Aetrix Electronics and suitable for industrial HMI systems, network switch buffers, medical imaging edge devices, and PLC controllers requiring stable component supply across multi-year production cycles.

Supply support for W632GG6NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust signal integrity, and advanced power management features like PASR and ASR.

FAQ

What is the maximum data rate supported by W632GG6NB-12?

W632GG6NB-12 supports a maximum data rate of 1600 MT/s (DDR3-1600), corresponding to a clock frequency of 800 MHz. This is confirmed by its speed grade suffix "-12", JEDEC-compliant 11-11-11 timing (tRCD/tRP/tRAS), and AC specifications in the datasheet Section 10.15.2. The device achieves this rate under 1.5 V supply and 0°C to 95°C case temperature conditions.

Does W632GG6NB-12 support on-die termination (ODT)?

Yes, W632GG6NB-12 supports programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals. ODT values-including RTT_NOM (60/120/240 Ω) and RTT_WR (60/120 Ω)-are configured via Mode Registers MR1 and MR2. Dynamic ODT (Rtt_WR) enables termination activation only during write operations, improving signal integrity without increasing read-path loading.

What package type and ball count does W632GG6NB-12 use?

W632GG6NB-12 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It complies with JEDEC MO-245AC and is lead-free/RoHS-compliant. Ball assignments match standard DDR3 SDRAM layouts, including dedicated CK/CK#, DQS/DQS#, and ODT control terminals.

Can W632GG6NB-12 operate in extended temperature ranges beyond 95°C?

No, W632GG6NB-12 is rated for 0°C ≤ TCASE ≤ 95°C only. For operation up to 105°C, the industrial-plus variant W632GG6NB12J must be selected. That part adds ASR capability and doubles refresh rate above 85°C, whereas W632GG6NB-12 lacks the required MR2 bit configuration (A6/A7) and thermal qualification for >95°C ambient.

How does W632GG6NB-12 implement write leveling?

W632GG6NB-12 implements write leveling via its dedicated write leveling mode, activated by setting MR1[A8] = 1. In this mode, the DRAM outputs a fixed 0101… pattern on DQ, allowing the memory controller to adjust DQS delay until the pattern is correctly captured. This calibrates DQS-to-CK skew and is mandatory for reliable high-speed writes across PVT corners.