Winbond Electronics Corporation W632GG6NB12I

Overview

W632GG6NB12I from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with industrial temperature range (–40°C to +95°C), VDD/VDDQ = 1.5 V ± 0.075 V, and 96-ball VFBGA (7.5 × 13 mm) packaging. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring JEDEC-compliant high-bandwidth, low-latency DRAM.

For engineers reviewing the W632GG6NB12I datasheet, W632GG6NB12I pinout, W632GG6NB12I application, or W632GG6NB12I equivalent, this page delivers verified DDR3-1600 timing parameters, industrial-grade thermal validation, ZQ calibration support, on-die termination (ODT) configuration, and mode register programmability for CAS Latency (CL=5–11), CAS Write Latency (CWL=5–8), and additive latency (AL=0, CL−1, CL−2).

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. It uses differential CK/CK# inputs synchronized at the crosspoint and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes, supported by a DLL for precise DQ–DQS alignment.

It supports full JEDEC DDR3 features including posted CAS, auto-precharge, burst chop (BC4) and burst length 8 (BL8), programmable read burst ordering (interleaved/nibble), dynamic ODT (Rtt_WR), ZQ calibration, partial array self-refresh (PASR), and asynchronous RESET#. Mode registers MR0–MR3 configure CL, CWL, AL, ODT RTT values, PASR, ASR, and MPR functionality.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness, 0.8 mm ball pitch), RoHS-compliant, lead-free construction. Ball map follows JEDEC MO-275AC standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GG6NB12I uniquely combines industrial temperature validation, PASR, MPR, and full write leveling support in a single JEDEC-compliant DDR3-1600 device-enabling robust memory subsystems in thermally demanding embedded applications without feature trade-offs.

Availability

W632GG6NB12I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for W632GG6NB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series is part of Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems needing extended temperature operation, JEDEC compliance, and advanced calibration features like ZQ, write leveling, and PASR.

FAQ

What is the maximum clock frequency supported by W632GG6NB12I?

W632GG6NB12I supports a maximum clock frequency of 800 MHz (DDR3-1600, 1600 MT/s), corresponding to a tCK(AVG) of 1.25 ns minimum for CL=11/CWL=8 operation. This is validated across the full industrial temperature range (–40°C to +95°C) with JEDEC-compliant timing margins including tRCD = 13.75 ns and tRP = 13.75 ns.

Does W632GG6NB12I support write leveling calibration?

Yes, W632GG6NB12I supports hardware-assisted write leveling via its Multi-Purpose Register (MPR) and dedicated write leveling mode. The DRAM internally adjusts DQS-to-CK skew during calibration, allowing the memory controller to compensate for board-level flight time mismatches-critical for reliable 800 MHz operation in dense PCB layouts.

What is the purpose of the ZQ pin on W632GG6NB12I?

The ZQ pin on W632GG6NB12I connects to an external 240 Ω ±1% resistor to ground and enables on-die calibration of output driver strength and ODT impedance. This compensates for process, voltage, and temperature (PVT) variations, ensuring consistent signal integrity and meeting SSTL_15 specifications across the industrial temperature range.

Can W632GG6NB12I operate in partial array self-refresh (PASR) mode?

Yes, W632GG6NB12I supports PASR via MR2 configuration (A1–A0 bits), allowing refresh of ¼, ½, or full memory array. This reduces self-refresh current (IDD6) proportionally-e.g., 50% reduction in half-array mode-making it ideal for battery-backed or thermally constrained industrial systems where power efficiency is critical.

What are the key differences between W632GG6NB12I and commercial-grade DDR3-1600 parts?

W632GG6NB12I is qualified for –40°C to +95°C operation with full JEDEC AC/DC specs across that range, unlike commercial parts (e.g., 0°C to +90°C). It also includes industrial-specific features: mandatory doubling of refresh rate above 85°C, ASR support, and extended reliability validation-ensuring stable memory operation in uncontrolled environments where commercial parts may fail.