Winbond Electronics Corporation W632GG6NB12I TR

Overview

W632GG6NB12I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with VDD/VDDQ = 1.5 V ± 0.075 V, and rated for industrial temperature range (−40°C to +95°C). It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for robust system initialization in embedded controllers and networking equipment.

For engineers reviewing the W632GG6NB12I TR datasheet, W632GG6NB12I TR pinout, W632GG6NB12I TR application, or W632GG6NB12I TR equivalent, key selection considerations include DDR3-1600 speed bin compliance, industrial temperature support, VFBGA-96 package compatibility, ODT configuration flexibility, and support for write leveling and MPR-based timing calibration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent memory access. It uses differential CK/CK# inputs synchronized at the cross-point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes, supported by a DLL for precise DQ-DQS-clock alignment.

Command decoding occurs on every rising edge of CK; data and DM are double-data-rate referenced to DQS/DQS#. The device supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths of 8 (BL8) or 4 (BC4), and dynamic ODT (Rtt_WR) for signal integrity optimization during write operations.

Key Specifications

Pinout & Package

VFBGA-96 package with 0.8 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Designed for high-density PCB layouts with controlled-impedance routing for DDR3 signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16256B-125KBL, W632GG6NB12I TR delivers broader programmability (CL up to 11, CWL up to 8), integrated write leveling, and PASR-enabling lower power and higher timing margin in thermally demanding industrial and automotive applications without requiring additional calibration firmware.

Availability

W632GG6NB12I TR is available at Aetrix Electronics and suitable for industrial PLC controllers, telecom line cards, medical imaging systems, and automotive ADAS ECUs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W632GG6NB12I TR belongs to Winbond's W632GG6NB DDR3 SDRAM product line, designed specifically for high-reliability embedded applications demanding industrial temperature operation, advanced calibration features, and JEDEC-compliant DDR3-1600 performance.

FAQ

What is the maximum clock frequency supported by W632GG6NB12I TR?

W632GG6NB12I TR supports a maximum clock frequency of 800 MHz (tCK = 1.25 ns), corresponding to a data rate of 1600 MT/s per pin in DDR3-1600 mode. This is validated under industrial temperature conditions (−40°C to +95°C) and VDD/VDDQ = 1.5 V ± 0.075 V per JEDEC specification. The device achieves this using DLL-aligned DQS-to-CK timing and supports CL=11/CWL=8 configurations for full timing margin.

Does W632GG6NB12I TR support write leveling, and how is it implemented?

Yes, W632GG6NB12I TR supports write leveling per JEDEC DDR3 specification. It uses the MRS command to enter write leveling mode, where the DRAM drives a fixed pattern on DQS/DQS# while the controller adjusts per-lane DQS delay to align with CK. The W632GG6NB12I TR responds with phase-shifted DQS edges, enabling precise capture timing calibration essential for reliable 1600 MT/s write operations.

What package type and ball count does W632GG6NB12I TR use?

W632GG6NB12I TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. All 96 balls are arranged in a rectangular grid optimized for DDR3 layout rules, including dedicated VDD/VDDQ/VSS distribution, differential CK/CK# and DQS/DQS# placement, and ZQ reference connection. The package is RoHS-compliant and lead-free.

How does the Partial Array Self-Refresh (PASR) feature reduce power in W632GG6NB12I TR?

PASR in W632GG6NB12I TR allows selective self-refresh of only active memory banks, reducing IDD6 current by up to 50 % compared to full-array refresh. Configured via MR2 bits A0–A2, it is especially valuable in battery-powered or thermally constrained industrial systems where background memory retention must coexist with low quiescent power. PASR requires no external control logic and operates transparently once enabled.

Is W632GG6NB12I TR compatible with standard DDR3L voltage levels?

W632GG6NB12I TR operates at nominal VDD/VDDQ = 1.5 V ± 0.075 V (1.425 V to 1.575 V), matching standard DDR3-not DDR3L (1.35 V). It is not rated for 1.35 V operation. Systems designed for DDR3L must verify regulator compatibility; using W632GG6NB12I TR in a DDR3L-only design may cause timing violations or functional failure due to insufficient noise margin at reduced voltage.