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Winbond Electronics Corporation W632GG6NB12J

Part No.:
W632GG6NB12J
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW632GG6NB12J.pdf
Description:
IC DRAM 2GBIT 96-VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,331

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Product details

Overview

W632GG6NB12J from Winbond Electronics is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with industrial-plus temperature range (–40°C to +105°C), VDD/VDDQ = 1.5V ±0.075V, and SSTL_15 interface. It serves as main memory in embedded computing, networking infrastructure, and industrial control systems requiring high-density, thermally robust DRAM.

For engineers reviewing the W632GG6NB12J datasheet, W632GG6NB12J pinout, W632GG6NB12J application, or W632GG6NB12J equivalent, this device supports programmable CAS latency (CL=5–11), dynamic on-die termination (Rtt_WR), ZQ calibration, write leveling, and multi-purpose register (MPR)-based timing calibration - critical for signal integrity and JEDEC-compliant DDR3 system integration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved access. Its differential CK/CK# inputs synchronize all commands, while bi-directional DQS/DQS# strobes center-align write data and edge-align read data relative to DQ signals.

The device supports asynchronous RESET#, posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multiple power-down modes including active and precharged power-down. It also features programmable CAS write latency (CWL = 5–8), partial array self-refresh (PASR), and auto self-refresh (ASR) for extended temperature operation up to +105°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density2 Gb (16M words × 8 banks × 16 bits), providing 256 MB of 16-bit wide memory space
Data Rate / Speed GradeDDR3-1600 (1600 MT/s), corresponding to 800 MHz clock frequency with tCK(AVG) = 1.25–1.875 ns
Timing Parameters (CL-nRCD-nRP)11-11-11 at 800 MHz, defining minimum tRCD/tRP = 13.75 ns and tRC = 48.75 ns for reliable command sequencing
Operating Temperature–40°C to +105°C case temperature, requiring ASR or manual self-refresh mode above +95°C per JEDEC spec
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V, compatible with standard DDR3 LDOs and power delivery networks
Interface StandardSSTL_15 I/O, ensuring impedance-matched signaling and compatibility with DDR3 controllers and PCB stackups
PackageVFBGA-96 (7.5 mm × 13 mm, 1.0 mm height), RoHS-compliant, lead-free, with 0.8 mm ball pitch

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height) with 0.8 mm ball pitch, RoHS-compliant and lead-free. Ball layout follows JEDEC-standard DDR3 SDRAM pin assignment for 16-bit x8-bank organization.

Pin/Terminal Circuit Role Design Meaning
A0–A13Address InputsRow/column address bits for bank, row, and column selection; A12/A13 used for bank select in 8-bank mode
BA0–BA2Bank Address InputsSelect one of eight internal banks; decoded with A12/A13 for full bank addressing
CK, CK#Differential Clock InputsEdge-triggered command latch points; all commands sampled at CK rising / CK# falling crosspoint
DQ0–DQ15Data I/Os16-bit bidirectional data bus; synchronized to DQS/DQS# with source-synchronous timing
DQS, DQS#Differential Data StrobeCenter-aligned with write data, edge-aligned with read data; enables precise capture timing
DM0–DM1Data Mask InputsPer-byte write masking for DQ[7:0] and DQ[15:8]; suppresses write data without affecting command flow
RESET#Asynchronous ResetActive-low initialization signal; triggers power-up sequence and clears internal state regardless of clock
ODTOn-Die Termination ControlDynamic enable/disable of termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines
WE#, RAS#, CAS#Command Control InputsStandard DDR3 command encoding (e.g., ACTIVE = /RAS low, /CAS high, /WE high)

Key Features

Feature Design Value
Programmable CAS Latency (CL)Supports CL = 5–11, enabling optimization for latency vs. bandwidth trade-offs across DDR3-1333 to DDR3-1600 speeds
Dynamic On-Die Termination (Rtt_WR)Configurable ODT during writes only, reducing stub reflections and improving write eye margin without impacting read termination
ZQ CalibrationOne-time or periodic calibration using external 240 Ω ±1% resistor to ground, correcting output driver and ODT impedance drift over voltage/temperature
Write Leveling SupportHardware-assisted timing alignment between DQS and CK via MRS-controlled mode, essential for stable high-speed write capture
Multi-Purpose Register (MPR)Predefined 128-bit pattern accessible via READ command, used for system-level timing calibration and signal integrity validation
Extended Temperature OperationValidated for –40°C to +105°C case temperature with mandatory ASR or manual self-refresh above +95°C per JEDEC JESD79-3F

Applications

Industrial PLC Memory Network Switch Buffer

Use Scenario: Real-time logic execution and I/O mapping in programmable logic controllers deployed in factory automation environments with ambient temperatures up to +105°C.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and data buffering, interfacing directly with ARM Cortex-A or RISC-V SoCs via DDR3 PHY.

Use Value: The W632GG6NB12J's industrial-plus rating and ASR support ensure uninterrupted operation during thermal transients, eliminating unexpected refresh-induced latency spikes.

Use Scenario: Packet buffering and forwarding table storage in Layer 2/3 Ethernet switches handling 10Gbps+ line rates.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory backing switch fabric ASICs and traffic managers requiring burst reads/writes with minimal tRCD/tRP overhead.

Use Value: DDR3-1600 speed and 8-bank concurrency enable >12 GB/s effective bandwidth, supporting simultaneous ingress/egress queue management under heavy load.

Medical Imaging Controller Avionics Display System

Use Scenario: Frame buffer and image processing scratchpad in ultrasound or MRI console subsystems where EMI resilience and long-term reliability are critical.

IC Role / Device Role / Timing Role: Dual-role memory serving both display rendering (read-heavy) and real-time FFT processing (write-heavy), leveraging dynamic ODT and write leveling.

Use Value: SSTL_15 I/O and differential DQS/CK signaling minimize jitter and crosstalk in mixed-signal medical enclosures, meeting IEC 60601 immunity requirements.

Use Scenario: Graphics and HUD memory in certified airborne display units operating across –55°C to +85°C ambient, with extended qualification to +105°C for avionics bay mounting.

IC Role / Device Role / Timing Role: Safety-critical memory subsystem for DO-254-compliant graphics processors, requiring deterministic refresh behavior and fail-safe reset recovery.

Use Value: Asynchronous RESET# and guaranteed tREFI ≤ 3.9 µS at +105°C enable predictable power-cycle recovery and compliance with ARP4754A safety lifecycle requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K256M16HA-125:E (Micron)Same density, speed grade (DDR3-1600), and VFBGA-96 package; supports CL=9–11 but lacks PASR and MPR; rated –40°C to +95°C onlyNot qualified for +105°C operation; requires external refresh controller for extended temp useChoose when cost sensitivity outweighs extended temperature need and system does not require PASR or MPR-based calibration
IS43TR16256B-125KBL (ISSI)Identical 2Gb/16-bit DDR3-1600 spec and VFBGA-96; supports CL=9–11 and ASR, but no write leveling or ZQ calibration; rated –40°C to +95°CLacks hardware write leveling and ZQ, increasing PCB layout complexity and margin risk at 800 MHzPrefer for legacy designs already using ISSI DDR3 and where board-level termination tuning replaces ZQ functionality

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GG6NB12J uniquely combines +105°C operation, write leveling, ZQ calibration, and MPR in a single DDR3-1600 SDRAM - delivering higher signal integrity margin and reduced system-level timing validation effort in thermally demanding applications.

Availability

W632GG6NB12J is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and guaranteed extended-temperature performance.

Supply support for W632GG6NB12J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like ZQ calibration and write leveling.

FAQ

What is the maximum operating temperature supported by the W632GG6NB12J?

The W632GG6NB12J is rated for a case temperature range of –40°C to +105°C. At temperatures above +95°C, JEDEC-compliant operation requires enabling Auto Self-Refresh (ASR) via MR2 bit A6 or using Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0, A7 = 1). This ensures tREFI remains ≤ 3.9 µS, preventing data retention loss. The W632GG6NB12J achieves this through process and design hardening beyond standard industrial-grade DDR3.

Does the W632GG6NB12J support write leveling, and how is it implemented?

Yes, the W632GG6NB12J supports hardware-assisted write leveling per JEDEC JESD79-3F. It is enabled by setting MR1[A8] = 1, entering write leveling mode via MRS command. In this mode, the DRAM outputs a predefined pattern on DQ while sampling DQS edges relative to CK to determine optimal delay for the memory controller's DQS-to-CK skew compensation. The W632GG6NB12J's implementation includes dedicated internal logic to generate and validate the leveling pattern without host-side firmware intervention.

What are the supported CAS latency (CL) and CAS write latency (CWL) values for W632GG6NB12J?

The W632GG6NB12J supports CAS Latency (CL) values of 5, 6, 7, 8, 9, 10, and 11, and CAS Write Latency (CWL) values of 5, 6, 7, and 8. These are programmed via Mode Registers MR0 and MR2 respectively. CL and CWL must be selected in conjunction with operating frequency: at DDR3-1600 (800 MHz), CL = 11 and CWL = 8 are typical, yielding RL = AL + CL and WL = AL + CWL, where AL is configurable as 0, CL−1, or CL−2. All combinations are validated per JEDEC AC timing tables in the datasheet.

How does ZQ calibration function on the W632GG6NB12J, and what external component is required?

ZQ calibration on the W632GG6NB12J uses an external 240 Ω ±1% precision resistor connected between the ZQ pin and VSS to calibrate both output driver strength and on-die termination (ODT) impedances. A ZQCL command initiates one-time calibration after power-up; ZQCS supports periodic recalibration during operation. The W632GG6NB12J's internal circuitry measures the ZQ reference and adjusts pull-up/pull-down transistor sizing to maintain SSTL_15-compatible drive strength and termination accuracy across voltage and temperature variations.

Is the W632GG6NB12J pin-compatible with other Winbond DDR3 SDRAMs in the same VFBGA-96 package?

Yes, the W632GG6NB12J shares identical ball mapping, power sequencing, and command protocol with other members of the W632GG6NB family (e.g., W632GG6NB12I, W632GG6NB-12) in the VFBGA-96 package. Pin functions, timing constraints, and electrical characteristics are consistent across speed grades and temperature variants, enabling drop-in replacement within the same DDR3-1600 bin and allowing shared PCB layout and firmware configuration across industrial and industrial-plus versions.

W632GG6NB12J Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W632GG6NB12J FAQ

1.How can I place an order for W632GG6NB12J through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6NB12J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6NB12J reliable?

The price and inventory of W632GG6NB12J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6NB12J is usually 5 days.

3.What payment methods are accepted for W632GG6NB12J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6NB12J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6NB12J?

W632GG6NB12J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6NB12J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6NB12J?

For technical support, including W632GG6NB12J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6NB12J requirements.

6.How does Aetrix verify that W632GG6NB12J is sourced from the original manufacturer or authorized distributors?

All W632GG6NB12J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6NB12J meets industry standards.

7.What is the process for return or replacement of W632GG6NB12J?

All W632GG6NB12J units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6NB12J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6NB12J part is unused and in its original packaging.

Return procedure for W632GG6NB12J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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