Winbond Electronics Corporation W632GG6NB-15

Overview

W632GG6NB-15 from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with 1.5V VDD/VDDQ supply, SSTL_15 interface, and VFBGA-96 (7.5×13 mm) package. It supports programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for power-up initialization. Used in embedded computing, industrial control, and network infrastructure memory subsystems.

For engineers reviewing the W632GG6NB-15 datasheet, W632GG6NB-15 pinout, W632GG6NB-15 application, or W632GG6NB-15 equivalent, key selection considerations include its DDR3-1333 timing compliance (9-9-9), industrial-grade temperature range (0°C to 95°C), VFBGA-96 ball mapping, and support for dynamic ODT, write leveling, and multi-purpose register (MPR)-based calibration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. It uses differential CK/CK# inputs synchronized at the cross-point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes.

The device supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and multiple power-down modes including precharged and active power-down. Refresh is managed via periodic auto-refresh (tREFI = 7.8 µs at 0–85°C) or temperature-compensated self-refresh (ASR/PASR).

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3 layout with dedicated VDD, VDDQ, VSS, VSSQ, address/command, data, strobe, and control balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6NB-15, the Micron part requires voltage derating and lacks 1.5V compatibility, while the ISSI part offers identical electrical behavior plus extended temperature support - making it a drop-in upgrade for harsher deployments without layout or firmware changes.

Availability

W632GG6NB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1333 performance.

Supply support for W632GG6NB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications requiring extended temperature operation, robust power sequencing, and JEDEC-compliant signal integrity.

FAQ

What is the maximum clock frequency supported by W632GG6NB-15?

W632GG6NB-15 supports a maximum clock frequency of 667 MHz (1333 MT/s data rate), corresponding to DDR3-1333 speed bin with tCK(AVG) = 1.5 ns minimum. This is confirmed in Section 4 (KEY PARAMETERS) of the datasheet, where fCKMAX = 667 MHz and CL-tRCD-tRP = 9-9-9 timing is specified. The device achieves this using SSTL_15 I/O and DLL-aligned DQS-to-clock tracking.

Does W632GG6NB-15 support on-die termination (ODT)?

Yes, W632GG6NB-15 supports programmable on-die termination (ODT) for DQ, DQS, and DM signals via MR1 and MR2 registers. It provides synchronous ODT (RTT_NOM) and dynamic ODT (RTT_WR) modes, with selectable impedances (60 Ω, 120 Ω, 40 Ω) depending on configuration. ODT is essential for signal integrity in point-to-point DDR3 topologies and is fully compliant with JEDEC JESD79-3F.

What package type and ball count does W632GG6NB-15 use?

W632GG6NB-15 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. The 96-ball layout follows JEDEC-standard DDR3 pinout, including dedicated VDD/VDDQ rails, differential clocks (CK/CK#), strobes (DQS/DQS#), and 16-bit data (DQ[15:0]). This package is RoHS-compliant and lead-free.

Can W632GG6NB-15 operate in self-refresh mode at elevated temperatures?

Yes, W632GG6NB-15 supports self-refresh across its full rated temperature range (0°C to 95°C). At TCASE > 85°C, it automatically doubles refresh frequency (tREFI = 3.9 µS) when Auto Self-Refresh (ASR) is enabled (MR2[7:6] = 10b). This ensures data retention without external refresh commands, critical for power-constrained or thermally stressed deployments.

Is write leveling supported on W632GG6NB-15?

Yes, W632GG6NB-15 implements JEDEC-compliant write leveling per Section 8.9 of the datasheet. It uses the DQS strobe to calibrate per-lane skew relative to CK during initialization, allowing precise timing capture at 1333 MT/s. The feature is enabled via MR1[7] and requires MPR readback for validation - a key capability for high-reliability DDR3 interfaces.