Winbond Electronics Corporation W632GG6NB15I

Overview

W632GG6NB15I from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with 1.5 V supply, industrial temperature range (−40°C to +95°C), and VFBGA-96 (7.5 × 13 mm) packaging. It supports programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W632GG6NB15I datasheet, W632GG6NB15I pinout, W632GG6NB15I application, or W632GG6NB15I equivalent, key selection criteria include its DDR3-1333 timing compliance, industrial-grade thermal rating, VFBGA-96 ball map, ODT configuration flexibility, and support for write leveling and MPR-based system calibration.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and high-bandwidth interleaved access. It uses differential CK/CK# inputs synchronized at the cross-point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes.

The device supports full JEDEC DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and manual/auto self-refresh (ASR) with extended temperature support up to +95°C. Its ZQ calibration uses an external 240 Ω resistor for output driver and ODT impedance tuning.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch. Ball layout conforms to JEDEC MO-245AC standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16256B-15KLI and MT41K256M16HA-125:E, the W632GG6NB15I offers native 1.5 V operation and JEDEC-compliant DDR3-1333 timing without voltage translation, making it optimal for cost-sensitive industrial systems where pinout reuse and supply simplicity are prioritized.

Availability

W632GG6NB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GG6NB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, robust signal integrity, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum supported CAS Latency for W632GG6NB15I?

The W632GG6NB15I supports CAS Latency settings of 5, 6, 7, 8, 9, and 10, with the default JEDEC timing bin configured for CL=9 (DDR3-1333 9-9-9). CL=10 is supported but requires corresponding tRCD/tRP adjustments per the datasheet AC timing tables. All CL values are programmable via Mode Register MR0 and validated across the full −40°C to +95°C operating range.

Does W632GG6NB15I support ZQ calibration, and what external resistor value is required?

Yes, W632GG6NB15I supports both ZQ short (ZQCS) and ZQ long (ZQL) calibration for output driver and ODT impedance tuning. It requires a precision 240 Ω ±1 % external resistor connected between ZQ pin and VSS. The calibration process compensates for voltage and temperature drift, ensuring stable 60 Ω or 120 Ω termination across the industrial temperature range.

Is W632GG6NB15I pin-compatible with other Winbond DDR3 SDRAMs in the same package?

W632GG6NB15I shares the same VFBGA-96 mechanical footprint and JEDEC-standard ball assignment as other members of the W632GG6NB family (e.g., W632GG6NB11I, W632GG6NB09I), enabling drop-in replacement within the same speed grade group. However, it is not pin-compatible with non-W632GG6NB series devices-even those in identical packages-due to differences in internal register mapping and optional feature enablement.

What power-saving modes does W632GG6NB15I support, and how are they activated?

W632GG6NB15I supports Precharged Power-Down, Active Power-Down, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). These are activated via command sequences (e.g., PDE/DPDE for power-down, SELF REFRESH for ASR) and mode register settings (MR2 bits A6/A7 for ASR/PASR). PASR reduces self-refresh current by limiting refresh to selected banks, while ASR automatically doubles refresh rate above +85°C to maintain data retention.

Can W632GG6NB15I be used in systems requiring write leveling calibration?

Yes, W632GG6NB15I fully supports JEDEC-compliant write leveling. The feature is enabled via MR1 bit A6, and the DRAM responds to controller-initiated write leveling commands by adjusting internal DQS delay taps. This allows precise DQS-to-CK skew compensation per byte lane, which is essential for maintaining setup/hold margins at DDR3-1333 speeds on high-density PCBs.