Winbond Electronics Corporation W632GG6NB15I TR

Overview

W632GG6NB TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3L-1333 (9-9-9) timing, operating at 667 MHz clock frequency with VDD/VDDQ = 1.5V ± 0.075V, and rated for industrial temperature range (–40°C to +95°C). It features programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable system initialization in embedded controllers and networking equipment.

For engineers reviewing the W632GG6NB TR datasheet, W632GG6NB TR pinout, W632GG6NB TR application, or W632GG6NB TR equivalent, key selection considerations include its DDR3-1333 speed bin with tRCD/tRP/tRC = 9-9-9 ns, industrial-grade thermal rating, VFBGA-96 package compatibility, and support for auto-precharge, partial array self-refresh (PASR), and write leveling for high-signal-integrity memory subsystems.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# signaling, and source-synchronous data capture. Its DLL aligns DQ and DQS edges to CK, supporting both interleaved and nibble-sequential burst ordering.

Command decoding occurs on every rising edge of CK, while read/write data transfers occur on both edges of DQS/DQS#. The device supports posted CAS with additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), and MPR-based system-level timing calibration - all essential for stable high-speed memory interface design in resource-constrained platforms.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Designed for high-density PCB layouts with controlled-impedance routing for DDR3 signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG6NB TR, MT41K256M16HA-125:E offers higher speed at lower voltage but demands board-level redesign, while IS43TR16256B-15HBL matches pinout and speed but omits critical calibration features needed for robust signal integrity in automotive/industrial systems.

Availability

W632GG6NB TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6NB TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GG6NB TR belongs to Winbond's DDR3 SDRAM product line, engineered for reliability in harsh environments and designed to meet JEDEC-standard timing, thermal, and signal integrity requirements for embedded computing platforms.

FAQ

What is the maximum clock frequency supported by the W632GG6NB TR?

The W632GG6NB TR is rated for DDR3-1333 operation, supporting a maximum data rate of 1333 MT/s, which corresponds to a 667 MHz differential clock frequency (tCK = 1.5 ns minimum). This speed grade is confirmed in the order information table for part number extension "15I", with CL/tRCD/tRP = 9-9-9 ns timing. Higher bins like DDR3-1600 are not supported by this specific variant.

Does the W632GG6NB TR support write leveling, and how is it implemented?

Yes, the W632GG6NB TR supports write leveling as defined in JEDEC JESD79-3F. It uses the DQS strobe to calibrate per-lane skew relative to CK during initialization. The DRAM internally adjusts DQS delay to center-align write data with CK, and the controller samples DQS feedback to determine optimal delay values. This function is enabled via MR1 bit A1 and requires no external components beyond standard DDR3 layout practices.

What is the purpose of the RESET# pin on the W632GG6NB TR, and is it mandatory?

The RESET# pin on the W632GG6NB TR provides asynchronous initialization control. It is mandatory for power-up sequence compliance and must be held low for ≥200 µs after VDD/VDDQ stabilization, then released high to begin internal DLL locking and mode register loading. Unlike some DDR3 devices, W632GG6NB TR does not support reset omission - skipping this step risks undefined state and failed initialization.

Can the W632GG6NB TR operate with VDD = 1.35V for DDR3L compatibility?

No, the W632GG6NB TR is specified exclusively for VDD/VDDQ = 1.5V ± 0.075V operation, per Section 2 of the datasheet. It is not a DDR3L device and lacks the process and design adaptations required for 1.35V operation. Attempting 1.35V supply will result in functional failure, including mode register corruption, timing violations, and inability to enter self-refresh.

How does Partial Array Self-Refresh (PASR) reduce power in the W632GG6NB TR?

PASR in the W632GG6NB TR allows selective refresh of only active memory banks instead of the full array, reducing self-refresh current (IDD6) proportionally. When configured via MR2 bits A0–A2, it cuts refresh-related power by up to 40% in workloads where only 1–4 banks are actively used - such as in real-time control buffers or sensor FIFOs - without compromising data retention integrity.