Winbond Electronics Corporation W632GG6NB-15 TR

Overview

W632GG6NB-15 TR from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz clock frequency with 1.5 V supply, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm). It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for power-up initialization - deployed in industrial embedded systems requiring reliable memory with extended temperature support.

For engineers reviewing the W632GG6NB-15 TR datasheet, W632GG6NB-15 TR pinout, W632GG6NB-15 TR application, or W632GG6NB-15 TR equivalent, this page delivers verified DDR3-1333 timing parameters, ball configuration, ODT control modes, self-refresh behavior at 95°C, and direct alternatives with matching speed bin, voltage, and package - critical for memory subsystem validation and BOM continuity planning.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. It uses differential CK/CK# inputs synchronized at the crossing point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes.

The device supports posted CAS with additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling for system-level timing calibration. Its -15 speed grade guarantees tAA/tRCD/tRP ≤ 13.5 ns at 667 MHz under 0°C ≤ TCASE ≤ 95°C, with full JEDEC AC/DC compliance including IDD0 ≤ 110 mA and IDD4R ≤ 165 mA.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction per JEDEC MO-270AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16256B-15KBL, W632GG6NB-15 TR adds PASR and MPR for enhanced power efficiency and system calibration - critical for thermally constrained industrial gateways. Versus MT41K256M16HA-125:E, it avoids voltage redesign but trades 267 MT/s bandwidth for guaranteed 95°C operation and simpler power delivery.

Availability

W632GG6NB-15 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG6NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation (up to 95°C case), JEDEC-compliant reliability, and feature-rich memory control including PASR, write leveling, and ZQ calibration.

FAQ

What is the maximum operating temperature supported by the W632GG6NB-15 TR?

The W632GG6NB-15 TR is rated for 0°C ≤ TCASE ≤ 95°C with full JEDEC AC/DC specifications. At temperatures above 85°C, the device requires doubled auto-refresh frequency (tREFI = 3.9 µS) and supports either Manual Self-Refresh with Extended Temperature Range (MR2 A6=0, A7=1) or Auto Self-Refresh (ASR) mode (MR2 A6=1). This ensures data retention integrity in sealed industrial enclosures without active cooling.

Does the W632GG6NB-15 TR support on-die termination (ODT) during both read and write operations?

The W632GG6NB-15 TR supports synchronous ODT for reads and dynamic ODT (Rtt_WR) exclusively during write operations. Dynamic ODT allows configurable termination impedance (e.g., 60 Ω, 120 Ω) only on DQ/DQS/DM lines while writing - preserving read signal integrity by disabling ODT during read cycles. This dual-mode ODT implementation is configured via MR1 and MR2 registers.

Can the W632GG6NB-15 TR be used as a drop-in replacement for DDR3-1333 modules with different CL settings?

The W632GG6NB-15 TR supports programmable CAS Latency (CL = 5–10) and is fully JEDEC-compliant for DDR3-1333 (9-9-9) operation. However, it is not a mechanical or electrical drop-in for modules - it is a bare die in VFBGA-96 packaging requiring direct PCB integration. System-level compatibility depends on controller support for CL selection, ODT configuration, and ZQ calibration sequence, not module-level pinout.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GG6NB-15 TR?

The MPR in the W632GG6NB-15 TR provides a predefined 128-bit calibration pattern accessible via standard READ commands. This enables system-level timing margin verification - particularly for DQS-to-CK skew measurement - without requiring external test equipment or custom firmware. The MPR is initialized at power-up and remains static until reprogrammed, making it integral to DDR3 write leveling and board-level validation workflows.

How does ZQ calibration function in the W632GG6NB-15 TR, and what external component is required?

ZQ calibration in the W632GG6NB-15 TR uses an external 240 Ω ± 1% precision resistor connected between ZQ pin and ground to calibrate both output driver strength and on-die termination (ODT) impedances across process, voltage, and temperature variations. The calibration command (ZQCL or ZQCS) must be issued after power-up, reset, or significant voltage/temperature shifts to maintain signal integrity at 667 MHz operation.