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Winbond Electronics Corporation W632GG8KB-11
- Part No.:
- W632GG8KB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GG8KB-11.pdf
- Description:
- IC DRAM 2GBIT PAR 78WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,223
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Product details
Overview
W632GG8KB-11 from Winbond is a 2G-bit DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, supporting DDR3-1866 (933 MHz) operation with CL=13, tRCD=tRP=13.91 ns, and 1.5 V VDD/VDDQ supply. It implements on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for embedded computing, industrial controllers, and networking equipment requiring high-bandwidth memory with JEDEC-compliant timing.
For engineers reviewing the W632GG8KB-11 datasheet, W632GG8KB-11 pinout, W632GG8KB-11 application, or W632GG8KB-11 equivalent, this page delivers verified DDR3-1866 timing parameters, ball-level interface mapping, ODT configuration options, and JEDEC-compliant power-down modes - all validated against Winbond's A05 revision specification dated Feb. 13, 2017.
Technical Context
This device uses an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL aligns DQ and DQS transitions to CK/CK#, while posted CAS with programmable additive latency (AL = 0, CL−1, CL−2) improves command bus efficiency. Read latency equals AL + CL, and write latency equals AL + CWL.
It supports dynamic ODT (Rtt_WR), multi-purpose register (MPR) readout for system timing calibration, and write leveling for strobe-to-data alignment. Power management includes Precharge Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR), all compliant with JEDEC DDR3 standard JESD79-3F.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), enabling 256 MB of byte-accessible storage per device |
| Data Rate | DDR3-1866 (933 MHz clock, 1866 MT/s), delivering 14.9 GB/s peak bandwidth across 64-bit interface |
| CAS Latency | CL = 13 at DDR3-1866, defining 13 clock cycles between READ command and first data output |
| tRCD / tRP | 13.91 ns minimum, setting minimum row-to-column and precharge delays for reliable bank activation |
| VDD / VDDQ | 1.5 V ± 75 mV, requiring tightly regulated dual-rail supply with SSTL_15 I/O compatibility |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C, with mandatory ASR or Manual Self-Refresh mode above 85°C |
| Package | WBGA-78 (8 mm × 10.5 mm), RoHS-compliant lead-free construction with 0.8 mm ball pitch |
Pinout & Package
W632GG8KB-11 is packaged in a 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch) with SSTL_15-compatible I/Os and differential clock/strobe inputs. Ball assignment follows JEDEC-standard DDR3 layout with dedicated VREFCA, VREFDQ, ZQ, and ODT control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all address/control inputs at crossing point; defines timing reference for all operations |
| DQS / DQS# | Differential data strobe | Source-synchronous edge-aligned with read data, center-aligned with write data |
| RESET# | Asynchronous reset input | Initiates power-up sequence and resets internal state without clock dependency |
| ODT | On-die termination control | Enables programmable termination on DQ/DQS/DM lines to suppress reflections |
| ZQ | Calibration reference terminal | Connects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance tuning |
| VREFCA / VREFDQ | Reference voltage inputs | Provide mid-supply references for command/address and data I/O thresholding |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables on-the-fly termination impedance switching during WRITE bursts to optimize signal integrity |
| Write Leveling | Allows controller to calibrate DQS-to-CK skew per rank, ensuring setup/hold compliance at 1866 MT/s |
| Multi-Purpose Register (MPR) | Outputs predefined bit pattern for system-level timing margin validation without disturbing memory contents |
| Programmable CWL | Supports CWL = 5–9, matching write latency to operating frequency (e.g., CWL = 9 at DDR3-1866) |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, extending battery life in portable systems |
Applications
| Industrial PLC Controllers | Network Packet Processors |
|---|---|
Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms in factory automation systems. IC Role / Device Role / Timing Role: Primary working memory for CPU instruction and data caching, interfacing via 64-bit DDR3 bus with strict tRCD/tRP timing adherence. Use Value: CL=13 and 13.91 ns tRCD enable predictable memory access latency critical for sub-millisecond cycle times. | Use Scenario: High-throughput packet buffering and header modification in Layer 3 switches and firewalls. IC Role / Device Role / Timing Role: Burst-capable frame buffer supporting concurrent read-modify-write operations across multiple traffic queues. Use Value: 1866 MT/s data rate and 8-bank interleaving sustain >12 GB/s sustained throughput under mixed read/write loads. |
| Medical Imaging Systems | Automotive ADAS Domain Controllers |
Use Scenario: Temporary storage of uncompressed DICOM image tiles during CT/MRI reconstruction pipelines. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for GPU-accelerated FFT and back-projection kernels. Use Value: DLL-aligned DQ/DQS and posted CAS minimize jitter-induced timing violations at 933 MHz clock. | Use Scenario: Sensor fusion buffer aggregating radar, camera, and ultrasonic inputs for real-time path planning. IC Role / Device Role / Timing Role: Safety-critical memory subsystem with ASR and PASR support for extended temperature operation up to 95°C. Use Value: ASR mode (MR2 A6=1b) enables automatic refresh rate doubling above 85°C without host intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:A | 256M × 16 organization, 1.35 V DDR3L supply, -125 speed grade (DDR3-1600) | Lower voltage and narrower bus width; suited for power-constrained mobile SoC designs | Select when system requires DDR3L compatibility and 16-bit interface instead of 8-bit wide x8 configuration |
| IS43TR16256B-125KBL | 256M × 16 organization, 1.5 V supply, -125 speed grade (DDR3-1600), 96-ball FBGA | Larger package footprint and different ball map; lacks PASR and ASR features | Choose for legacy board reuse where 96-ball layout and JEDEC DDR3-1600 timing are fixed constraints |
Compared with W632GG8KB-11, MT41K256M16HA-125:A offers lower voltage operation but reduced density per chip and no ASR/PASR; IS43TR16256B-125KBL provides identical voltage but omits advanced power management and requires PCB redesign due to incompatible packaging.
Availability
W632GG8KB-11 is available at Aetrix Electronics and suitable for industrial PLC controllers, network packet processors, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC DDR3-1866 compliance.
Supply support for W632GG8KB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GG8KB-11 belongs to Winbond's DDR3 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems needing JEDEC-compliant high-speed memory with extended temperature support and robust power management.
FAQ
What is the maximum clock frequency supported by the W632GG8KB-11?
The W632GG8KB-11 supports a maximum clock frequency of 933 MHz, corresponding to DDR3-1866 operation (1866 MT/s). This is validated under JEDEC conditions with CL=13, tRCD=tRP=13.91 ns, and VDD/VDDQ=1.5 V ±75 mV. The device achieves this speed using DLL-aligned DQ/DQS timing and SSTL_15 I/O signaling, as confirmed in Winbond's A05 datasheet section 4 and 10.15.1.
Does the W632GG8KB-11 support extended temperature operation up to 95°C?
Yes, the W632GG8KB-11 supports 0°C ≤ TCASE ≤ 95°C operation. Above 85°C, it requires either Manual Self-Refresh with Extended Temperature Range capability (MR2 A6=0b, A7=1b) or Auto Self-Refresh (ASR) mode (MR2 A6=1b) to double refresh frequency to 3.9 µS intervals. This is explicitly defined in datasheet note 4 and section 8.3.3.3.
How is on-die termination (ODT) configured on the W632GG8KB-11?
ODT on the W632GG8KB-11 is controlled via the ODT pin and mode registers MR1 and MR2. Static ODT values (RTT_NOM, RTT_WR) are set through MR1 bits A9–A7 and MR2 bits A2–A0. Dynamic ODT (Rtt_WR) is enabled via MR2 A1=1 and activated during WRITE commands. Termination applies to DQ, DQS, DQS#, and DM signals, as detailed in sections 8.3.2.3, 8.3.3.4, and 8.19.
What package type and ball count does the W632GG8KB-11 use?
The W632GG8KB-11 uses a 78-ball WBGA package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. It is lead-free and RoHS compliant. Ball configuration includes dedicated CK/CK#, DQS/DQS#, ZQ, VREFCA, VREFDQ, RESET#, and ODT terminals, as shown in datasheet sections 5 and 6.
Can the W632GG8KB-11 operate with CAS Latency less than 13?
No - the W632GG8KB-11 speed grade -11 is specified only for CL=13 at DDR3-1866. While the datasheet lists CL=6,8,10,13 as supported settings across the family, section 4 confirms that the -11 grade exclusively supports CL=13 (13-13-13 timing). Lower CL values are not guaranteed or characterized for this speed bin.
W632GG8KB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GG8KB-11 FAQ
1.How can I place an order for W632GG8KB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8KB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8KB-11 reliable?
The price and inventory of W632GG8KB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8KB-11 is usually 5 days.
3.What payment methods are accepted for W632GG8KB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8KB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8KB-11?
W632GG8KB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8KB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8KB-11?
For technical support, including W632GG8KB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8KB-11 requirements.
6.How does Aetrix verify that W632GG8KB-11 is sourced from the original manufacturer or authorized distributors?
All W632GG8KB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8KB-11 meets industry standards.
7.What is the process for return or replacement of W632GG8KB-11?
All W632GG8KB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8KB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8KB-11 part is unused and in its original packaging.
Return procedure for W632GG8KB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8KB-11 Tags
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