Winbond Electronics Corporation W632GG8KB-11 TR

Overview

W632GG8KB-11 TR from Winbond is a 2Gb (256M × 8) DDR3 SDRAM organized in eight internal banks, supporting DDR3-1866 operation at 933 MHz with CL=13, tRCD=tRP=13 ns, and 1.5V VDD/VDDQ supply. It implements on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for power-up initialization in memory subsystems of embedded controllers and industrial SoC platforms.

For engineers reviewing the W632GG8KB-11 TR datasheet, W632GG8KB-11 TR pinout, W632GG8KB-11 TR application, or W632GG8KB-11 TR equivalent, key selection criteria include DDR3-1866 timing compliance (13-13-13), WBGA-78 package compatibility, SSTL_15 interface voltage levels, and support for write leveling, MPR-based calibration, and dynamic ODT during burst writes.

Technical Context

This DDR3 SDRAM uses an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with all address/control latched at the crossing point. Internal DLL aligns DQ and DQS transitions to clock edges, enabling precise source-synchronous data capture.

It supports programmable CAS latency (CL = 6, 8, 10, 13), additive latency (AL = 0, CL−1, CL−2), and CAS write latency (CWL = 5–9), with read latency RL = AL + CL and write latency WL = AL + CWL. Mode registers MR0–MR3 configure ODT, PASR, ASR, TDQS, and MPR functionality.

Key Specifications

Pinout & Package

W632GG8KB-11 TR is housed in a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. The package uses lead-free, RoHS-compliant materials and supports standard reflow profiles for surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GG8KB-11 TR delivers higher bandwidth (DDR3-1866 vs. DDR3-1600), integrated ZQ calibration, and MPR-based system tuning-making it optimal for bandwidth-critical, thermally constrained embedded designs where WBGA-78 footprint is acceptable.

Availability

W632GG8KB-11 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GG8KB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and computing markets.

The W632GG8KB series belongs to Winbond's high-reliability DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, low-power self-refresh, and advanced signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum supported data rate for W632GG8KB-11 TR?

W632GG8KB-11 TR supports DDR3-1866 operation at 933 MHz clock frequency, delivering 1866 Mb/s per pin. This is confirmed by its -11 speed grade designation and the 13-13-13 timing specification (tAA/tRCD/tRP = 13.91 ns min) in the official datasheet revision A05. The device achieves this rate using SSTL_15 signaling and DLL-aligned DQ/DQS timing.

Does W632GG8KB-11 TR support write leveling and how is it implemented?

Yes, W632GG8KB-11 TR supports write leveling as a mandatory DDR3 feature. It uses the DQS strobe to calibrate skew between controller and DRAM by adjusting delay taps on the DQS path. The procedure is initiated via mode register MR1 bit A5, and the DRAM responds with a predefined MPR pattern. This ensures accurate DQS-to-CK alignment during WRITE operations at DDR3-1866 speeds.

What package type and ball count does W632GG8KB-11 TR use?

W632GG8KB-11 TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm pitch. Pinout is defined in datasheet section 5 (Ball Configuration) and section 6 (Ball Description), confirming signals including CK/CK#, CKE, CS#, ODT, RESET#, DQS/DQS#, DM, and ZQ-all positioned for standard DDR3 layout practices.

Can W632GG8KB-11 TR operate across the full industrial temperature range?

W632GG8KB-11 TR is rated for 0°C ≤ TCASE ≤ 95°C per the order information table. While it meets full JEDEC AC/DC specs across 0°C–85°C, operation up to 95°C requires doubling refresh rate (tREFI = 3.9 µS) and enabling Auto Self-Refresh (ASR) via MR2 bits A6/A7. It is not qualified for −40°C operation; for that, the W632GG8KB12I or W632GG8KB15I variants must be used.

How does dynamic ODT function in W632GG8KB-11 TR and what value does it provide?

In W632GG8KB-11 TR, dynamic ODT (Rtt_WR) applies on-die termination only during WRITE bursts to DQ/DQS/DM lines, reducing signal reflections on unterminated stubs. It is configured via MR2 bits A0–A2 and improves write eye margin without impacting read timing or increasing static power. This feature is critical for maintaining signal integrity in multi-drop DDR3 topologies at 1866 Mb/s.