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Winbond Electronics Corporation W632GG8KB-12
- Part No.:
- W632GG8KB-12
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GG8KB-12.pdf
- Description:
- IC DRAM 2GBIT 78-WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,256
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Product details
Overview
W632GG8KB-12 from Winbond is a 2Gb (256M × 8) DDR3 SDRAM organized in 8 banks, supporting DDR3-1600 speed grade (11-11-11 timing), 1.5V VDD/VDDQ supply, and industrial-grade operation up to 95°C case temperature. It delivers 1600 Mb/sec/pin data rates with programmable CAS latency (CL = 6, 7, 8, 9, 10, 11), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded computing and networking equipment.
For engineers reviewing the W632GG8KB-12 datasheet, W632GG8KB-12 pinout, W632GG8KB-12 application, or W632GG8KB-12 equivalent, this page provides verified DDR3 timing parameters, ball mapping, ODT configuration options, write leveling support, and JEDEC-compliant power-down modes essential for DDR3 interface validation and PCB layout.
Technical Context
The W632GG8KB-12 implements a double-data-rate architecture with 8-bit prefetch, differential CK/CK# clocking, and source-synchronous DQS/DQS# strobes aligned to read/write data edges. Its internal 8-bank structure enables concurrent row activation and interleaved burst access to sustain high bandwidth.
It supports programmable features including additive latency (AL = 0, CL−1, CL−2), CAS write latency (CWL = 5–8), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and multi-purpose register (MPR) for system-level timing calibration-enabling precise signal integrity tuning in high-speed memory interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), 8 banks × 32M words per bank |
| Data Rate | DDR3-1600: 1600 Mb/sec/pin (800 MHz clock, tCK = 1.25 ns min) |
| CAS Latency (CL) | Configurable CL = 6, 7, 8, 9, 10, 11; tAA min = 13.75 ns at CL=11 |
| Timing Bin | 11-11-11 (tRCD/tRP/tRC = 11 ns each at 800 MHz) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V; SSTL_15 I/O interface standard |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial extended range) |
| Power Management | Precharge Power Down, Active Power Down, Self-Refresh (IDD6 ≤ 19 mA) |
| ZQ Calibration | Supports external 240 Ω reference resistor for output driver and ODT impedance tuning |
Pinout & Package
W632GG8KB-12 uses a 78-ball WBGA package (8 mm × 10.5 mm, RoHS-compliant, lead-free). Ball pitch is 0.8 mm; package height is 1.0 mm max.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Samples all command/address inputs at crossing point; defines timing reference for all operations |
| CKE | Clock Enable | Asynchronous control for power-down entry/exit; must remain HIGH during active reads/writes |
| CS# | Chip Select | Active-low enable for command decoding; used for rank selection in multi-RAM systems |
| ODT | On-Die Termination Control | Registered input enabling dynamic or synchronous ODT on DQ/DQS/DM lines per MR1 settings |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence; required before first command after power stabilization |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe for read/write data; center-aligned on writes, edge-aligned on reads |
| DM | Data Mask | Per-byte write mask for 8-bit data bus; suppresses masked byte during WRITE bursts |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω resistor to ground for factory-trimmed output/ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–8 selectable per frequency; sets write latency WL = AL + CWL for timing closure |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE bursts only, improving signal integrity without affecting READ paths |
| Write Leveling Support | Calibrates DQS-to-CK skew via MRS commands; required for reliable high-speed WRITE timing margin |
| Multi-Purpose Register (MPR) | Reads predefined calibration pattern (0x00000000) for system-level timing margin analysis |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks; cuts IDD6 by up to 40% in partial-use scenarios |
| Posted CAS with Additive Latency | AL = 0, CL−1, CL−2 allows pipelined command acceptance while maintaining RL = AL + CL timing consistency |
Applications
| Networking Equipment | Industrial HMI Controllers |
|---|---|
Use Scenario: Packet buffering and table lookup in Layer 3 switches and enterprise routers operating at 800 MHz DDR3 clock. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A9 or MIPS-based network processors with 64-bit bus width. Use Value: DDR3-1600 bandwidth meets 10 Gbps line-rate packet buffering requirements; PASR reduces thermal load during low-traffic periods. |
Use Scenario: Real-time UI rendering and local data logging in panel-mounted HMIs deployed in factory automation environments. IC Role / Device Role / Timing Role: Main system memory for ARM-based SoCs running Linux with deterministic response to touch and I/O interrupts. Use Value: Extended 95°C case rating ensures reliability in sealed enclosures; write leveling guarantees stable WRITE margins across temperature and voltage variation. |
| Embedded Vision Systems | Medical Imaging Gateways |
Use Scenario: Frame buffer and intermediate processing buffer in FPGA-accelerated vision pipelines for smart cameras. IC Role / Device Role / Timing Role: High-bandwidth memory resource for burst-intensive image capture (e.g., 12-bit RAW at 60 fps) and preprocessing. Use Value: 8-bank concurrency enables simultaneous frame capture and DMA transfer; dynamic ODT minimizes signal reflections on long trace runs. |
Use Scenario: DICOM image caching and protocol translation in portable ultrasound or X-ray gateway devices. IC Role / Device Role / Timing Role: Non-volatile cache memory supporting secure boot, firmware updates, and DICOM header metadata storage. Use Value: Asynchronous RESET# enables safe recovery from brown-out events; ZQ calibration maintains signal fidelity across medical-grade EMI environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same density (2Gb × 8), same DDR3-1600 speed bin, but 96-ball FBGA package (10 mm × 14 mm); requires PCB redesign. | Designed for server/desktop DDR3 modules; lacks industrial temp support beyond 85°C. | Select if migrating from Micron-based platforms or requiring JEDEC-standard 96-ball footprint compatibility. |
| IS43TR16256B-125KBL | 16-bit bus width (×16), not ×8; requires lane remapping and doubled data bus routing; identical 78-ball WBGA package. | Optimized for LPDDR3 migration paths; includes enhanced refresh management for battery-backed systems. | Choose only when board layout supports ×16 interface and system firmware can accommodate wider data path. |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GG8KB-12 offers direct ×8 bus compatibility, industrial 95°C operation, and native 78-ball WBGA footprint-making it optimal for space-constrained embedded designs where thermal margin and pin count are critical.
Availability
W632GG8KB-12 is available at Aetrix Electronics and suitable for networking equipment, industrial HMI controllers, embedded vision systems, and medical imaging gateways requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3 performance.
Supply support for W632GG8KB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GG8KB-12 belongs to Winbond's DDR3 SDRAM product line, engineered for cost-sensitive, thermally demanding embedded applications requiring JEDEC compliance, extended temperature operation, and robust signal integrity features like write leveling and dynamic ODT.
FAQ
What is the maximum operating frequency of the W632GG8KB-12?
The W632GG8KB-12 is rated for DDR3-1600 operation, supporting a maximum clock frequency of 800 MHz (1600 MT/s). Its tCK(AVG) minimum is 1.25 ns at CL=11, and it meets all JEDEC AC timing requirements for the 11-11-11 speed bin under 0°C to 95°C case temperature conditions. The W632GG8KB-12 does not support DDR3-1866 or higher frequencies.
Does the W632GG8KB-12 support industrial temperature range?
Yes, the W632GG8KB-12 is specified for 0°C ≤ TCASE ≤ 95°C, qualifying it for extended commercial and light industrial use. For full −40°C to 95°C operation, Winbond offers the W632GG8KB12I variant (same speed bin, industrial-grade qualification). The W632GG8KB-12 itself is not rated below 0°C.
How is on-die termination (ODT) configured on the W632GG8KB-12?
ODT on the W632GG8KB-12 is controlled via the ODT pin and mode registers MR1 and MR2. MR1 sets static ODT resistance (Rtt_Nom = 75 Ω, 150 Ω, or 50 Ω), while MR2 enables dynamic ODT (Rtt_WR) during WRITE operations. The W632GG8KB-12 supports both synchronous and asynchronous ODT modes, with ZQ calibration required after power-up to calibrate impedance accuracy.
What is the purpose of the ZQ pin on the W632GG8KB-12?
The ZQ pin on the W632GG8KB-12 connects to an external 240 Ω precision resistor to ground and enables factory-trimmed calibration of output driver strength and ODT impedance. ZQ calibration must be performed at least once after power-up and periodically during operation to maintain signal integrity across voltage and temperature drift. The W632GG8KB-12 supports both ZQCL (long) and ZQCS (short) calibration commands.
Can the W632GG8KB-12 operate with CAS Latency 7?
Yes, the W632GG8KB-12 supports CL = 7 as an optional setting per JEDEC specification, though it is not guaranteed across all operating conditions. CL = 7 requires tAA/tRCD/tRP ≤ 13.125 ns and SPD programming to match; it is validated only when down-binned from the base DDR3-1600 (11-11-11) spec. The W632GG8KB-12 default and fully guaranteed CL values are 6, 8, 9, 10, and 11.
W632GG8KB-12 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GG8KB-12 FAQ
1.How can I place an order for W632GG8KB-12 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8KB-12 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8KB-12 reliable?
The price and inventory of W632GG8KB-12 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8KB-12 is usually 5 days.
3.What payment methods are accepted for W632GG8KB-12?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8KB-12 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8KB-12?
W632GG8KB-12 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8KB-12 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8KB-12?
For technical support, including W632GG8KB-12 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8KB-12 requirements.
6.How does Aetrix verify that W632GG8KB-12 is sourced from the original manufacturer or authorized distributors?
All W632GG8KB-12 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8KB-12 meets industry standards.
7.What is the process for return or replacement of W632GG8KB-12?
All W632GG8KB-12 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8KB-12, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8KB-12 part is unused and in its original packaging.
Return procedure for W632GG8KB-12:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8KB-12 Tags
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M24C02-WMN6TP
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