Winbond Electronics Corporation W632GG8KB12I TR

Overview

W632GG8KB12I TR from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, supporting DDR3-1600 speed grade (11-11-11 timing), 1.5 V core/interface supply, industrial temperature range (−40°C to +95°C), and packaged in 78-ball WBGA (8 mm × 10.5 mm). It serves as main memory in embedded controllers, networking processors, and industrial SoC platforms requiring reliable high-bandwidth data buffering.

For engineers reviewing the W632GG8KB12I TR datasheet, W632GG8KB12I TR pinout, W632GG8KB12I TR application, or W632GG8KB12I TR equivalent, key selection criteria include its industrial-grade thermal rating, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, ZQ calibration capability, and asynchronous RESET# for robust power-up initialization.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# signaling compliant with SSTL_15, and DLL-based alignment of DQ and DQS transitions to clock edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional operation includes ZQ calibration using an external 240 Ω reference resistor, multi-purpose register (MPR) readout for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and dual ODT modes-synchronous (RTT_NOM, RTT_WR) and asynchronous-with programmable impedance values (60 Ω, 120 Ω, 40 Ω).

Key Specifications

Pinout & Package

W632GG8KB12I TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. The package is lead-free and RoHS-compliant, optimized for high-density PCB layouts and thermal performance in industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GG8KB12I TR uniquely combines industrial temperature support, 8-bit bus compatibility, standard DDR3 1.5 V operation, and proven ZQ/ODT calibration stability - making it the only option qualified for long-life, thermally demanding embedded deployments without hardware revision.

Availability

W632GG8KB12I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GG8KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GG8KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for mission-critical embedded applications where extended temperature operation, long-term supply stability, and JEDEC-compliant signal integrity are mandatory.

FAQ

What is the maximum operating frequency and corresponding timing specification for W632GG8KB12I TR?

W632GG8KB12I TR is rated for DDR3-1600 operation, meaning a maximum clock frequency of 800 MHz (1600 MT/s data rate) with JEDEC-standard 11-11-11 timing (tRCD = tRP = tRAS = 13.75 ns minimum). This speed grade is validated across the full industrial temperature range (−40°C to +95°C), and the device supports optional down-binning to DDR3-1333 or DDR3-1066 if required by system timing margins.

Does W632GG8KB12I TR support on-die termination (ODT), and how is it configured?

Yes, W632GG8KB12I TR supports programmable on-die termination (ODT) on DQ, DQS/DQS#, and DM pins. ODT is controlled via Mode Register MR1 (bits A2–A0) and MR2 (bit A9), enabling static termination (RTT_NOM) and dynamic write-time termination (Rtt_WR). The ODT resistance values are 60 Ω, 120 Ω, and 40 Ω, selected by MR settings and calibrated using the ZQ pin and external 240 Ω resistor.

How does the RESET# pin function in W632GG8KB12I TR, and is it synchronous or asynchronous?

The RESET# pin in W632GG8KB12I TR is an asynchronous, active-low input that initiates power-up initialization and functional reset regardless of clock or CKE state. During power-on, asserting RESET# after VDD/VDDQ stabilization triggers the full initialization sequence, including ZQ calibration and mode register loading. Its asynchronous nature ensures reliable recovery from brown-out or watchdog-triggered resets without clock dependency.

What is the purpose of the Multi-Purpose Register (MPR) in W632GG8KB12I TR, and how is it used?

The Multi-Purpose Register (MPR) in W632GG8KB12I TR provides a fixed, non-volatile 128-bit pattern (0x00000000 repeated) readable via normal READ commands when MPR mode is enabled (MR3 A0 = 1). It is used exclusively for system-level timing calibration - particularly write leveling - allowing the memory controller to measure and compensate for DQ-to-DQS skew without accessing actual memory arrays or altering stored data.

Can W632GG8KB12I TR operate reliably at 95°C case temperature, and what conditions apply?

Yes, W632GG8KB12I TR is explicitly qualified for operation up to +95°C case temperature. To maintain JEDEC compliance at this upper limit, the auto-refresh interval must be halved to tREFI = 3.9 µs (from 7.8 µs), achievable either by enabling Auto Self Refresh (ASR) via MR2 or by entering Manual Self-Refresh mode with Extended Temperature Range enabled (MR2 A6 = 0, A7 = 1). This requirement is documented in the datasheet's Key Parameters table and Revision A05 notes.