Winbond Electronics Corporation W632GG8KB-12 TR

Overview

W632GG8KB-12 TR from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1600 speed (800 MHz clock, 1600 MT/s), with CL=11, tRCD=tRP=11 ns, and 1.5 V VDD/VDDQ supply. It implements on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for embedded computing, industrial controllers, and network infrastructure memory subsystems.

For engineers reviewing the W632GG8KB-12 TR datasheet, W632GG8KB-12 TR pinout, W632GG8KB-12 TR application, or W632GG8KB-12 TR equivalent, this page delivers verified DDR3 timing parameters, ball mapping, ODT configuration options, and JEDEC-compliant power-down modes - all specific to the -12 speed grade and industrial-temperature-capable -12I variant.

Technical Context

This DDR3 SDRAM uses an 8-bit prefetch architecture with eight internal banks, supporting burst lengths of 8 (BL8) and burst chop 4 (BC4), programmable read burst ordering (interleaved/nibble sequential), and posted CAS with additive latency (AL = 0, CL−1, CL−2). Its DLL aligns DQ/DQS transitions to CK/CK#, enabling precise source-synchronous data capture.

It supports dynamic ODT (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, write leveling for DQS-to-DQ skew compensation, and partial array self-refresh (PASR) to reduce power in idle bank subsets. The device requires ZQ calibration via external 240 Ω resistor and complies fully with JEDEC JESD79-3F for DDR3-1600 (11-11-11).

Key Specifications

Pinout & Package

Packaged in 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch), RoHS-compliant, lead-free. Ball grid layout supports standard DDR3 routing with dedicated differential clocks (CK/CK#), strobes (DQS/DQS#), and termination control (ODT).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GG8KB-12 TR provides native industrial temperature support (-40°C to 95°C) in its -12I variant and retains identical 8-bit bus width and 78-ball WBGA footprint - enabling drop-in replacement in existing DDR3-1600 designs without layout change or voltage rail modification.

Availability

W632GG8KB-12 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed -40°C to 95°C operation.

Supply support for W632GG8KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant reliability, and robust signal integrity features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum operating frequency supported by the W632GG8KB-12 TR?

The W632GG8KB-12 TR supports a maximum clock frequency of 800 MHz, delivering a data transfer rate of 1600 MT/s (DDR3-1600). This is confirmed by its speed grade designation "-12", which corresponds to the JEDEC DDR3-1600 (11-11-11) timing specification. The device achieves this performance with CL=11, tRCD=tRP=11 ns, and operates within 1.5 V ± 0.075 V supply tolerance.

Does the W632GG8KB-12 TR support industrial temperature range?

Yes - the W632GG8KB-12 TR has a standard operating range of 0°C to 95°C, and its industrial-grade variant W632GG8KB12I is explicitly rated for -40°C to 95°C per the datasheet's Order Information table. Both share identical electrical and timing specifications, with the -12I variant validated across the full industrial temperature range including refresh interval adjustments and AC parameter compliance.

How does ZQ calibration function on the W632GG8KB-12 TR?

ZQ calibration on the W632GG8KB-12 TR uses the dedicated ZQ ball connected to a 240 Ω ±1 % resistor to ground. During ZQ calibration commands (ZQCL or ZQCS), internal circuitry measures this reference to trim output driver strength and on-die termination (ODT) resistance values across process, voltage, and temperature. This ensures consistent 34 Ω nominal output impedance and selectable ODT values (60/120/40 Ω) without external components.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GG8KB-12 TR?

The MPR in the W632GG8KB-12 TR outputs a fixed 32-bit pattern (0x00000000) on the DQ pins when activated via Mode Register MR3. This predefined sequence enables system-level timing calibration - particularly for verifying DQS-to-DQ alignment during write leveling - without requiring actual memory writes or controller-specific firmware. It is a hardware-assisted debug feature defined in JEDEC DDR3 standard.

Can the W632GG8KB-12 TR operate with dynamic ODT enabled only during writes?

Yes - the W632GG8KB-12 TR supports Dynamic ODT (Rtt_WR) mode, where on-die termination is activated exclusively during WRITE operations using MR2 bit A1–A0. This allows configurable termination (60/120/40 Ω) on DQ/DQS/DM lines while writing, improving signal integrity on the data bus without affecting read paths or increasing standby power. Rtt_WR is independent of static Rtt_Nom settings.