Winbond Electronics Corporation W632GG8KB15I
- Part No.:
- W632GG8KB15I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GG8KB15I.pdf
- Description:
- IC DRAM 2GBIT PAR 78WBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W632GG8KB15I from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR3-1333 speed (667 MHz clock, 9-9-9 timing), with industrial temperature support (–40°C to +95°C), 1.5 V core/interface supply, and on-die termination (ODT). It serves as main memory in embedded computing, networking equipment, and industrial controllers requiring reliable high-bandwidth data buffering.
For engineers reviewing the W632GG8KB15I datasheet, W632GG8KB15I pinout, W632GG8KB15I application, or W632GG8KB15I equivalent, this page delivers verified DDR3-1333 timing parameters, ball-mapped I/O roles, industrial-grade thermal behavior, ZQ calibration support, and validated alternative parts for memory subsystem design and BOM continuity planning.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent row activation and interleaved access. It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and dynamic ODT for write-data signal integrity.
The device uses differential CK/CK# and DQS/DQS# signaling with SSTL_15 I/O interface, DLL-aligned DQ-DQS timing, and asynchronous RESET# for power-up initialization. It includes ZQ calibration for output driver and ODT impedance tuning, multi-purpose register (MPR) for system-level timing calibration, and partial array self-refresh (PASR) for reduced power in idle bank subsets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - defines usable capacity and address space mapping |
| Data Rate / Speed Grade | DDR3-1333 (1333 MT/s, 667 MHz fCK), CL=9, tRCD/tRP/tRC = 9-9-9 - sets maximum sustained bandwidth and timing budget constraints |
| Operating Temperature | –40°C ≤ TCASE ≤ 95°C - enables deployment in extended-temperature industrial environments without derating |
| Supply Voltages | VDD = VDDQ = 1.5 V ± 0.075 V - requires tight-regulated 1.5 V rail; incompatible with DDR3L or DDR4 voltage domains |
| Interface Standard | SSTL_15 I/O with differential CK/CK# and DQS/DQS# - mandates matched trace lengths and controlled-impedance PCB routing |
| On-Die Termination | Programmable ODT (RTT_NOM = 60 Ω, 120 Ω, 40 Ω) and dynamic ODT (Rtt_WR) - eliminates external termination resistors and improves write eye margin |
| ZQ Calibration | Uses external 240 Ω ±1 % reference resistor to calibrate output drivers and ODT impedances - ensures consistent drive strength across voltage/temperature |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires controller support for extended-temp refresh rate doubling or ASR mode |
Pinout & Package
Packaged in 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch), RoHS-compliant, lead-free. Ball grid follows JEDEC-standard DDR3 layout with dedicated VDD/VSS/VDDQ/VSSQ planes, split reference pins (VREFCA, VREFDQ), and dual-purpose balls (e.g., DM/TDQS, NU/TDQS#).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Latches all command/address inputs at crossing point; determines maximum frequency and timing closure |
| CKE | Clock enable | Asynchronous control for power-down entry/exit; must remain HIGH during active reads/writes |
| CS# | Chip select | Active-low command gate; enables rank-level addressing in multi-RAM systems |
| ODT | On-die termination control | Dynamic enable of internal termination on DQ/DQS/DM lines during writes - reduces stub reflections |
| RESET# | Asynchronous reset | Initiates power-up sequence and resets internal state machines; required before initialization |
| DQS / DQS# | Differential data strobe | Source-synchronous timing reference for read/write data; center-aligned on write, edge-aligned on read |
| DM | Data mask | Per-byte write masking signal; suppresses individual byte lanes during burst writes |
| ZQ | ZQ calibration reference | Connects to 240 Ω ±1 % resistor to ground; calibrates output driver and ODT impedance accuracy |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5, 6, 7 per frequency - enables precise write timing alignment with controller PHY |
| Multi-Purpose Register (MPR) | Reads predefined calibration pattern for system-level timing margin validation - eliminates need for external test patterns |
| Write Leveling Support | Enables per-device DQS-to-CK skew compensation in multi-drop DIMM designs - critical for >2-rank layouts |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts IDD6 up to 40% when partial arrays are idle |
| Auto Self-Refresh (ASR) | Automatically adjusts refresh rate based on die temperature - maintains data retention at 95°C without host intervention |
| Posted CAS with Additive Latency | Improves command bus efficiency by decoupling column command issuance from data availability - increases effective bandwidth under burst-heavy loads |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with cyclic I/O scanning and firmware updates over EtherCAT. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7-based controller, holding program code, stack, and process image with guaranteed 95°C operation. Use Value: Industrial temperature rating and PASR reduce thermal throttling and power draw during low-activity cycles, extending fanless enclosure lifetime. |
Use Scenario: Layer-2/Layer-3 packet buffering in managed Gigabit Ethernet switches handling 10+ ports with QoS and VLAN tagging. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple traffic engines; requires low-latency random access and high burst throughput. Use Value: DDR3-1333 bandwidth and 8-bank concurrency enable simultaneous ingress/egress queue management without head-of-line blocking. |
| Medical Imaging Control Board | Video Surveillance DVR Memory |
Use Scenario: Embedded control board in ultrasound or MRI systems managing sensor acquisition, real-time filtering, and display rendering pipelines. IC Role / Device Role / Timing Role: Dual-role memory: stores acquisition buffers (burst writes) and GUI frame buffers (sequential reads) with strict jitter tolerance. Use Value: SSTL_15 interface and DLL-aligned DQS ensure sub-nanosecond timing stability critical for analog-to-digital synchronization. |
Use Scenario: Standalone DVR unit recording 4–8 HD camera streams simultaneously with motion detection and local playback. IC Role / Device Role / Timing Role: Frame buffer and encode/decode working memory for H.264/H.265 video processing SoC with shared memory architecture. Use Value: Dynamic ODT and write leveling maintain signal integrity across long PCB traces between SoC and memory, preventing bit errors in compressed video streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:K | Same density (2 Gb), DDR3L-1600 (1.35 V), commercial temp (0–90°C); no industrial grade variant | Requires lower VDD/VDDQ; not rated for –40°C or 95°C operation - unsuitable for sealed industrial enclosures | Select only if system uses DDR3L power domain and operates within 0–90°C ambient. |
| IS43TR16256B-125KBL | 2 Gb DDR3, DDR3-1600 (125 MHz tCK), industrial temp (–40°C to +95°C), 16-bit bus width | 16-bit interface doubles per-pin bandwidth but requires wider data bus and different controller configuration | Choose when higher bandwidth per pin is needed and controller supports x16 mode; verify layout compatibility with 96-ball FBGA. |
Compared with W632GG8KB15I, MT41K256M8DA-125:K offers higher speed but lacks industrial temperature support and requires DDR3L voltage, while IS43TR16256B-125KBL provides same temperature range but demands x16 bus redesign - W632GG8KB15I remains optimal for cost-sensitive, thermally demanding x8 DDR3-1333 implementations.
Availability
W632GG8KB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W632GG8KB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM for industrial, automotive, and communications markets.
The W632GG8KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems needing extended temperature operation, robust power management, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum operating frequency and timing specification for W632GG8KB15I?
W632GG8KB15I is rated for DDR3-1333 operation with a maximum clock frequency of 667 MHz and JEDEC-standard 9-9-9 timing (tRCD = tRP = tRC = 9 ns). It supports CAS Latency settings of 6, 7, 8, 9, 10 and CAS Write Latency of 5–7, with minimum tAA, tRCD, and tRP values of 13.5 ns at 667 MHz. The part is fully compliant with DDR3 SDRAM standard JESD79-3F.
Does W632GG8KB15I support industrial temperature operation, and what are the thermal limits?
Yes, W632GG8KB15I is qualified for industrial temperature operation across –40°C ≤ TCASE ≤ 95°C. At 85–95°C, it requires either doubled refresh rate (tREFI = 3.9 µs) or Auto Self-Refresh (ASR) mode enabled via MR2 bits A6/A7. This makes W632GG8KB15I suitable for fanless enclosures, outdoor telecom gear, and factory-floor controllers where ambient heat exceeds commercial-grade limits.
How does ZQ calibration function on W632GG8KB15I, and what external component is required?
W632GG8KB15I performs ZQ calibration using an external 240 Ω ±1 % precision resistor connected between the ZQ ball and ground. This calibration adjusts both output driver strength and on-die termination (ODT) impedance to maintain signal integrity across voltage and temperature variations. Calibration is initiated via ZQCL command after power-up and can be repeated using ZQCS for dynamic recalibration during operation.
What DDR3 features does W632GG8KB15I implement to reduce system-level power consumption?
W632GG8KB15I implements multiple power-saving features: Precharge Power Down and Active Power Down modes reduce IDD during idle periods; Partial Array Self-Refresh (PASR) lowers self-refresh current by refreshing only active banks; Auto Self-Refresh (ASR) dynamically scales refresh rate with temperature; and programmable ODT minimizes termination-related leakage. At 95°C, IDD6 remains at 19 mA due to ASR/PASR synergy.
Is W632GG8KB15I pin-compatible with other Winbond DDR3 parts such as W632GG8KB-15 or W632GG8KB12I?
Yes, W632GG8KB15I shares identical 78-ball WBGA package, pinout, and ball functionality with W632GG8KB-15 and W632GG8KB12I. All variants use the same mechanical footprint and electrical interface - only speed bin (-15 vs. 12I vs. 15I) and temperature grading differ. This allows drop-in replacement during qualification or production ramp without PCB redesign.
W632GG8KB15I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GG8KB15I FAQ
1.How can I place an order for W632GG8KB15I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8KB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8KB15I reliable?
The price and inventory of W632GG8KB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8KB15I is usually 5 days.
3.What payment methods are accepted for W632GG8KB15I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8KB15I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8KB15I?
W632GG8KB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8KB15I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8KB15I?
For technical support, including W632GG8KB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8KB15I requirements.
6.How does Aetrix verify that W632GG8KB15I is sourced from the original manufacturer or authorized distributors?
All W632GG8KB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8KB15I meets industry standards.
7.What is the process for return or replacement of W632GG8KB15I?
All W632GG8KB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8KB15I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8KB15I part is unused and in its original packaging.
Return procedure for W632GG8KB15I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8KB15I Tags

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