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Winbond Electronics Corporation W632GG8KB15I TR

Part No.:
W632GG8KB15I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW632GG8KB15I TR.pdf
Description:
IC DRAM 2GBIT PAR 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,694

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Product details

Overview

W632GG8KB15I TR from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR3-1333 speed (667 MHz clock, 9-9-9 timing), with industrial temperature range (–40°C to +95°C), 1.5 V supply, and WBGA-78 package. It serves as main memory in embedded controllers, networking processors, and industrial SoC platforms requiring reliable high-bandwidth data buffering.

For engineers reviewing the W632GG8KB15I TR datasheet, W632GG8KB15I TR pinout, W632GG8KB15I TR application, or W632GG8KB15I TR equivalent, this page delivers verified DDR3 timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and industrial-grade power-down behavior - all confirmed for the -15I speed grade and TR tape-and-reel packaging.

Technical Context

This DDR3 SDRAM implements eight internal banks, 8-bit prefetch architecture, and source-synchronous I/O using differential DQS/DQS# strobes aligned to CK/CK#. It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Key control features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration via external 240 Ω resistor, multi-purpose register (MPR) for timing calibration readout, and write leveling for system-level signal integrity tuning. All inputs conform to SSTL_15 interface standards.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - enables full 32-bit data path with byte-level masking.
Data Rate / Speed Grade DDR3-1333 (1333 MT/s), 667 MHz clock - supports standard JEDEC-compliant memory interfaces in industrial CPUs and FPGAs.
Timing (CL-nRCD-nRP) 9-9-9 - defines minimum tAA = 13.5 ns, tRCD = 13.5 ns, tRP = 13.5 ns for stable burst access under industrial thermal conditions.
Operating Voltage VDD/VDDQ = 1.5 V ± 0.075 V - requires tightly regulated dual-rail supply; VREFCA and VREFDQ must be stable at 0.75 V.
Temperature Range –40°C ≤ TCASE ≤ 95°C - validated for extended industrial operation with doubled refresh rate (tREFI = 3.9 µs) above 85°C.
Package WBGA-78 (8 mm × 10.5 mm, 0.8 mm pitch) - RoHS-compliant, lead-free, suitable for high-density PCB layouts with thermal pad grounding.
Power Modes Precharge Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR) - reduces IDD6 to 19 mA in Self-Refresh.

Pinout & Package

W632GG8KB15I TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package with 8×10.5 mm² footprint, 0.8 mm ball pitch, and exposed thermal pad (VSS). Ball assignments follow JEDEC-standard DDR3 layout with dedicated differential clocks (CK/CK#), strobes (DQS/DQS#), address/control (A0–A14, BA0–BA2, RAS#/CAS#/WE#), and data (DQ0–DQ7, DM/TDQS, NU/TDQS#).

Pin/Terminal Circuit Role Design Meaning
CK / CK# Differential clock input Samples all address/control on rising CK/falling CK# crossing; determines maximum 667 MHz operation for W632GG8KB15I TR.
DQS / DQS# Differential data strobe Source-synchronous capture of read/write data; center-aligned on writes, edge-aligned on reads per JEDEC DDR3 spec.
ODT On-die termination control Enables programmable termination (RTT_NOM = 60/120/240 Ω) on DQ/DQS/DM lines during writes to suppress reflections.
RESET# Asynchronous reset input Triggers power-up initialization sequence and resets internal state without clock dependency - required before first command.
ZQ ZQ calibration reference Connects to 240 Ω ±1% external resistor to ground; calibrates output driver impedance and ODT values at power-up and periodic intervals.

Key Features

Feature Design Value
Programmable CAS Write Latency (CWL) CWL = 5, 6, or 7 - matches tCK(AVG) down to 1.5 ns for DDR3-1333; ensures write timing closure across voltage/temperature corners.
Dynamic ODT (Rtt_WR) Configurable termination during write bursts only - improves signal integrity on shared DQ bus without affecting read eye opening.
Write Leveling Support Uses MPR pattern and DQS delay adjustment to compensate for board trace skew - essential for reliable 667 MHz write setup/hold margins.
Multi-Purpose Register (MPR) Reads fixed calibration bit pattern (0x00000000) via DQ pins - enables system-level timing margin verification without disturbing memory contents.
Industrial Refresh Management Supports tREFI = 3.9 µS at TCASE > 85°C via ASR or Manual Self-Refresh - maintains data retention without external refresh controller intervention.

Applications

Industrial PLC Memory Buffer Network Packet Processor Cache

Use Scenario: Real-time deterministic I/O scanning and logic execution in programmable logic controllers with multi-core ARM Cortex-A9 processors.

IC Role / Device Role / Timing Role: Primary working memory supporting burst reads/writes at 1333 MT/s with guaranteed 9-9-9 latency across –40°C to +95°C ambient.

Use Value: Enables deterministic cycle time under thermal stress via validated self-refresh current (IDD6 = 19 mA) and extended temperature refresh handling.

Use Scenario: High-throughput packet buffering in Layer 3 switches and enterprise routers using Broadcom BCM56xx or Marvell Prestera ASICs.

IC Role / Device Role / Timing Role: Off-chip DDR3 cache for packet header lookup tables and flow statistics aggregation with ODT-enabled signal integrity.

Use Value: Delivers stable 667 MHz operation with dynamic ODT (Rtt_WR) and write leveling - reducing bit error rates on dense 10G+ backplanes.

Medical Imaging Controller RAM Automotive ADAS Domain Controller

Use Scenario: Image frame buffering in ultrasound and digital X-ray systems where data coherency and long-term reliability are critical.

IC Role / Device Role / Timing Role: Non-volatile-capable memory subsystem with PASR and ASR for selective bank refresh during low-power imaging standby cycles.

Use Value: Reduces active current (IDD1 = 110 mA) and self-refresh current (IDD6 = 19 mA) while maintaining JEDEC compliance over full industrial range.

Use Scenario: Sensor fusion memory in automotive ADAS ECUs running NXP S32G or Renesas R-Car H3, requiring AEC-Q100 alignment.

IC Role / Device Role / Timing Role: Safety-critical DRAM for radar preprocessing and camera pipeline buffers with asynchronous RESET# for fail-safe reinitialization.

Use Value: Industrial-grade thermal validation (–40°C to +95°C) and robust ZQ calibration ensure consistent timing margins across vehicle lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K256M8RH-125:E (Micron) Same density (2 Gb), DDR3L-1600 (1.35 V), 96-ball FBGA; CL = 9–11, tREFI = 7.8 µs at 85°C only. Lacks industrial –40°C to +95°C rating; requires separate 1.35 V rail; no native support for tREFI = 3.9 µs at 95°C. Select when lower voltage operation is prioritized and ambient stays ≤ 85°C; verify RESET# timing and ZQ resistor compatibility.
IS43TR16256B-125KBL (ISSI) 2 Gb, DDR3-1333, 96-ball FBGA; CL = 9, CWL = 7; supports –40°C to +95°C but specifies tREFI = 7.8 µs only up to 85°C. No documented ASR or manual self-refresh mode for >85°C operation; ODT settings limited to RTT_NOM = 60/120 Ω only. Choose for cost-sensitive designs where extended-temperature refresh is managed externally; confirm write leveling implementation parity.

Compared with W632GG8KB15I TR, both alternatives lack integrated support for 3.9 µs refresh at 95°C and require external refresh management or derated thermal operation - whereas W632GG8KB15I TR natively enables ASR/MRS-controlled extended-temperature retention without firmware overhead.

Availability

W632GG8KB15I TR is available at Aetrix Electronics and suitable for industrial PLCs, network packet processors, medical imaging controllers, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG8KB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W632GG8KB15I TR belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, low-power refresh modes, and JEDEC-compliant signal integrity in space-constrained layouts.

FAQ

What is the maximum clock frequency supported by W632GG8KB15I TR?

W632GG8KB15I TR supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rate (1333 MT/s). This is validated for the -15I speed grade across its full industrial temperature range (–40°C to +95°C), with tCK(AVG) = 1.5 ns minimum for CL=9/CWL=7 operation.

Does W632GG8KB15I TR support automatic refresh at 95°C case temperature?

Yes, W632GG8KB15I TR supports automatic refresh at 95°C via Auto Self-Refresh (ASR) mode, enabled by setting MR2[A6]=1b. At TCASE > 85°C, it requires tREFI = 3.9 µs (doubled refresh rate), which is fully supported in ASR or Manual Self-Refresh modes - a key differentiator from standard DDR3 parts.

What is the function of the ZQ pin on W632GG8KB15I TR?

The ZQ pin on W632GG8KB15I TR connects to a 240 Ω ±1% external resistor to ground and enables on-die calibration of output driver strength and ODT resistance values. Calibration occurs at power-up and can be triggered manually via ZQCL command to maintain signal integrity across voltage and temperature drift.

Can W632GG8KB15I TR operate with CL=7 at DDR3-1333 speed?

Yes, W632GG8KB15I TR supports CL=7 at DDR3-1333 speed, but only if the system's SPD programming and tAA/tRCD/tRP timing parameters are set to ≤13.125 ns. This down-binned configuration is explicitly permitted per datasheet Note 5 and requires matching SPD byte updates for interoperability.

How does the ODT pin function during write operations on W632GG8KB15I TR?

When ODT is asserted HIGH on W632GG8KB15I TR, it activates on-die termination on DQ, DQS, DQS#, and DM lines. In Dynamic ODT (Rtt_WR) mode, termination is applied only during write bursts - improving write signal integrity without degrading read eye diagrams or increasing static power consumption.

W632GG8KB15I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W632GG8KB15I TR FAQ

1.How can I place an order for W632GG8KB15I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG8KB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG8KB15I TR reliable?

The price and inventory of W632GG8KB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8KB15I TR is usually 5 days.

3.What payment methods are accepted for W632GG8KB15I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8KB15I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG8KB15I TR?

W632GG8KB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG8KB15I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG8KB15I TR?

For technical support, including W632GG8KB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8KB15I TR requirements.

6.How does Aetrix verify that W632GG8KB15I TR is sourced from the original manufacturer or authorized distributors?

All W632GG8KB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8KB15I TR meets industry standards.

7.What is the process for return or replacement of W632GG8KB15I TR?

All W632GG8KB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8KB15I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG8KB15I TR part is unused and in its original packaging.

Return procedure for W632GG8KB15I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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