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Winbond Electronics Corporation W632GG8MB11I
- Part No.:
- W632GG8MB11I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GG8MB11I.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,136
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Product details
Overview
W632GG8MB11I from Winbond Electronics is a 2 Gbit (256 M × 8) DDR3 SDRAM organized in 8 banks, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, designed for high-bandwidth memory subsystems in industrial embedded systems, network infrastructure, and industrial PCs requiring extended temperature support from –40°C to +95°C.
For engineers reviewing the W632GG8MB11I datasheet, W632GG8MB11I pinout, W632GG8MB11I application, or W632GG8MB11I equivalent, this part delivers JEDEC-compliant DDR3 timing, on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous reset - all validated for industrial-grade thermal stability and signal integrity under sustained load.
Technical Context
The W632GG8MB11I implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write data capture. It supports posted CAS with additive latency (AL = 0, CL–1, CL–2), enabling efficient command bus utilization in burst-intensive workloads.
Its internal timing engine enables dynamic ODT control (Rtt_WR), multi-purpose register (MPR)-assisted system calibration, write leveling for PCB skew compensation, and partial array self-refresh (PASR) to reduce power during selective bank retention - all configurable via MR0–MR3 registers and compliant with DDR3 JEDEC JESD79-3F.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gbit (256 M words × 8 bits), 8-bank architecture enabling concurrent access across banks |
| Data Rate | DDR3-1866 (1866 MT/s), 933 MHz clock frequency with tCK(AVG) = 1.07–1.25 ns for CL13/CWL9 |
| CAS Latency | Configurable CL = 5–14; CL13 required for DDR3-1866 compliance per JEDEC spec |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V, SSTL_15 I/O interface compatible with standard DDR3 controllers |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C, qualified for industrial environments without derating |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate enabled via ASR or manual self-refresh) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free |
| Power Consumption | IDD4R = 170 mA max (burst read), IDD6 = 11 mA max (self-refresh), optimized for low-power active/idle states |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Designed for automated surface-mount assembly and thermal reliability in industrial PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address latched on rising edge of CK; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Edge-triggered command/address sampling; defines timing reference for all operations |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; referenced to DQS/DQS# for source-synchronous timing |
| DQS, DQS# | Differential Strobe | Center-aligned with write data, edge-aligned with read data; used for timing capture and write leveling |
| DM | Data Mask | Per-byte mask for write operations; suppresses selected DQ bits during burst writes |
| RESET# | Asynchronous Reset | Active-low initialization signal; triggers power-up sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., ACTIVE, READ, WRITE, PRECHARGE) |
| VDD, VDDQ, VSS | Power/Ground | Separate core (VDD) and I/O (VDDQ) supplies; multiple VSS balls for noise reduction |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to adjust output driver impedance and ODT values within ±10% tolerance |
| Write Leveling | Hardware-assisted timing alignment between CK and DQS edges to compensate for board trace skew during write setup |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS for system-level timing margin verification and eye diagram analysis |
| Dynamic ODT (Rtt_WR) | Programmable termination activation only during write bursts, reducing standby power while maintaining signal integrity on DQ lines |
| Partial Array Self-Refresh (PASR) | Selective refresh of active banks only, cutting self-refresh current by up to 40% when full-array retention is unnecessary |
| Asynchronous RESET# | Guaranteed initialization sequence independent of clock state, ensuring deterministic startup after cold power-on or brownout recovery |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time logic execution and I/O mapping in programmable logic controllers operating continuously in factory-floor environments with ambient temperatures from –20°C to +75°C. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage, interfacing directly with ARM Cortex-A9 or RISC-V SoC memory controllers. Use Value: Extended –40°C to +95°C qualification ensures uninterrupted operation during thermal transients; DDR3-1866 bandwidth supports >1.2 GB/s sustained throughput for multi-axis motion control buffering. | Use Scenario: High-throughput packet buffering in Layer 2/Layer 3 Ethernet switches handling 10Gbps+ line rates with deep buffer requirements. IC Role / Device Role / Timing Role: Shared packet memory pool accessed concurrently by multiple ingress/egress engines and traffic managers. Use Value: 8-bank interleaving and programmable tRCD/tRP minimize bank conflict stalls; dynamic ODT maintains signal integrity across dense backplane traces at 933 MHz. |
| Medical Imaging Data Cache | Industrial HMI Frame Buffer |
Use Scenario: Temporary storage of reconstructed CT/MRI image tiles during real-time rendering and DICOM export in diagnostic imaging equipment. IC Role / Device Role / Timing Role: Burst-oriented frame cache feeding GPU or display controller pipelines with low-latency read access. Use Value: CL13 + AL0 yields RL13 read latency; MPR-read calibration enables precise timing margin validation before FDA certification testing. | Use Scenario: Graphics frame buffer for ruggedized human-machine interfaces in oilfield or rail applications exposed to vibration and wide thermal cycling. IC Role / Device Role / Timing Role: Dual-port-accessible memory mapped to display controller and application processor for seamless UI updates. Use Value: PASR reduces self-refresh current during idle screen periods; VFBGA-78 mechanical robustness prevents solder joint fatigue under repeated thermal shock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8RH-125:E | Same density (2 Gbit), VFBGA-78, DDR3-1600 (CL11), rated –40°C to +95°C; no support for DDR3-1866 or CL13 | Suitable for cost-sensitive designs where 1600 MT/s suffices; lacks write leveling and MPR features | Select if bandwidth headroom is not required and JEDEC-compliant DDR3-1600 timing meets system timing budget |
| IS43TR16256B-125KBL | 16-bit bus (x16), 2 Gbit, VFBGA-96, DDR3L-1600 (1.35 V), –40°C to +95°C; incompatible pinout and voltage | Requires redesign of memory interface and power delivery; targets DDR3L low-voltage platforms | Choose only when migrating to DDR3L ecosystem and board layout allows 96-ball footprint change |
Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GG8MB11I uniquely delivers DDR3-1866 performance at industrial temperature with full JEDEC feature set (write leveling, MPR, PASR), making it optimal for bandwidth-constrained, thermally demanding embedded systems where drop-in replacement is not feasible but functional equivalence is required.
Availability
W632GG8MB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W632GG8MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, engineered specifically for extended temperature operation, JEDEC compliance, and robust signal integrity in mission-critical embedded memory subsystems.
FAQ
What is the maximum supported CAS Latency for W632GG8MB11I?
The W632GG8MB11I supports CAS Latency settings from CL5 through CL14. For its rated DDR3-1866 speed bin (13-13-13), CL13 is the required and validated setting. CL14 is supported at reduced frequency; CL11 and below are not guaranteed for this speed grade per JEDEC timing tables in the datasheet.
Does W632GG8MB11I support DDR3L (1.35 V) operation?
No, W632GG8MB11I is specified only for standard DDR3 VDD/VDDQ = 1.5 V ± 0.075 V operation. It does not meet DDR3L voltage specifications and must be powered from a 1.5 V supply rail. Using 1.35 V will result in undefined behavior and failure to meet AC timing parameters.
How is the W632GG8MB11I initialized after power-up?
W632GG8MB11I requires an asynchronous RESET# pulse (≥200 ns) after VDD/VDDQ stabilize, followed by a 200 µs delay before issuing a NOP command, then a MRS command to configure mode registers. This sequence is mandatory before any ACTIVE or REFRESH commands and is defined in Section 8.2.1 of the datasheet.
Can W632GG8MB11I operate at 105°C case temperature?
No - the "11I" suffix denotes –40°C to +95°C operation. The +105°C rating applies only to "11J" variants. Operating W632GG8MB11I above +95°C violates its qualified temperature range and may cause timing violations, increased refresh failure rate, or permanent parametric shift.
What is the purpose of the Multi-Purpose Register (MPR) in W632GG8MB11I?
The MPR in W632GG8MB11I outputs a fixed 128-bit calibration pattern (0x00000000FFFFFFFF…) on DQ pins during reads. This enables system-level timing margin testing (e.g., eye diagram measurement) and validates DQS-to-DQ alignment without requiring user data patterns - a critical step in DDR3 bring-up and validation of the W632GG8MB11I interface.
W632GG8MB11I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GG8MB11I FAQ
1.How can I place an order for W632GG8MB11I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8MB11I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8MB11I reliable?
The price and inventory of W632GG8MB11I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8MB11I is usually 5 days.
3.What payment methods are accepted for W632GG8MB11I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8MB11I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8MB11I?
W632GG8MB11I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8MB11I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8MB11I?
For technical support, including W632GG8MB11I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8MB11I requirements.
6.How does Aetrix verify that W632GG8MB11I is sourced from the original manufacturer or authorized distributors?
All W632GG8MB11I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8MB11I meets industry standards.
7.What is the process for return or replacement of W632GG8MB11I?
All W632GG8MB11I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8MB11I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8MB11I part is unused and in its original packaging.
Return procedure for W632GG8MB11I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8MB11I Tags
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