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Winbond Electronics Corporation W632GG8MB11J
- Part No.:
- W632GG8MB11J
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GG8MB11J.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,669
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Product details
Overview
W632GG8MB11J from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1866 speed (13-13-13 CL), with 1.5 V supply, industrial-plus temperature range (−40°C to +105°C), and VFBGA78 package. It serves as main memory in embedded computing, networking infrastructure, and industrial control systems requiring high bandwidth and extended thermal reliability.
For engineers reviewing the W632GG8MB11J datasheet, W632GG8MB11J pinout, W632GG8MB11J application, or W632GG8MB11J equivalent, key selection criteria include CAS latency support (CL=5–13), programmable CWL (5–7), ZQ calibration, dynamic ODT, and industrial-plus thermal qualification for fanless or high-ambient deployments.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O referenced to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable burst ordering (interleaved/nibble sequential).
Functional operation includes asynchronous RESET#, auto-precharge, multiple power-down modes (precharged/active), self-refresh with ASR/PASR, write leveling, MPR-based timing calibration, and on-die termination with synchronous/dynamic/asynchronous ODT modes controlled via MR1/MR2 registers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M × 8 × 8 for standard DDR3 x8 interface compatibility |
| Data Rate | DDR3-1866 (933 MHz clock, 1866 MT/s), validated for 13-13-13 timing at −40°C to +105°C |
| Voltage Supply | VDD/VDDQ = 1.5 V ± 0.075 V; SSTL_15-compatible I/O interface ensures signal integrity on dense PCBs |
| CAS Latency | Programmable CL = 5, 6, 8, 10, 13; enables tuning for latency vs. bandwidth trade-offs in real-time systems |
| CAS Write Latency | Programmable CWL = 5, 6, 7; matches tWPRE/tWPST timing requirements for reliable write capture |
| Refresh Interval | tREFI = 3.9 µs at 95°C < TCASE ≤ 105°C; requires ASR or manual self-refresh mode activation |
| Package | VFBGA78 (8 mm × 10.5 mm × 1.0 mm, RoHS-compliant, lead-free) |
| Operating Temperature | −40°C ≤ TCASE ≤ +105°C (industrial-plus grade); qualified per JEDEC JESD22-A108 |
Pinout & Package
VFBGA78 package with 0.8 mm ball pitch, 8×10.5 mm footprint, and 1.0 mm height. Ball assignment follows JEDEC-standard DDR3 x8 layout with dedicated VDD, VDDQ, VSS, VSSQ, and NC balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | CK | Differential clock input (rising edge active); synchronizes all command/address latching |
| A2 | CK# | Inverted clock input; defines latch point at CK/CK# crosspoint for robust timing margin |
| B1 | DQS | Differential data strobe (output during read, input during write); center-aligned with write data, edge-aligned with read data |
| B2 | DQS# | Inverted data strobe; enables source-synchronous DDR timing and jitter tolerance |
| E1 | RESET# | Asynchronous active-low reset; initiates power-up initialization sequence and clears internal state |
| G1 | ODT | On-die termination control input; selects ODT resistance values (Rtt_Nom, Rtt_WR) per MR1/MR2 settings |
| H1 | WE# | Write enable command input; low during write operations, high during reads/precharge/refresh |
| J1 | CS# | Chip select input; enables command decoding when low; supports multi-rank memory configurations |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | Uses external 240 Ω ±1 % reference resistor to calibrate output driver impedance and ODT values, ensuring consistent signal integrity across voltage/temperature |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation only during write bursts, reducing standby power and improving write eye margin without affecting read paths |
| Write Leveling | Allows controller to adjust DQS-to-CK skew per rank via MRS commands, critical for timing closure in multi-drop DDR3 topologies |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern (0x00000000) for system-level timing calibration; supports automated read training without user data interference |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active banks, extending battery life in portable industrial devices |
| Auto Self-Refresh (ASR) | Automatically switches to self-refresh when temperature exceeds 95°C, eliminating host intervention for thermal safety in sealed enclosures |
Applications
| Industrial PLC Memory | Telecom Baseband Unit |
|---|---|
Use Scenario: Real-time motion control logic executing cyclic tasks with deterministic response under ambient temperatures up to 105°C. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-R or FPGA-based control processors; buffers sensor inputs and actuator outputs. Use Value: Industrial-plus temperature rating eliminates need for forced cooling; PASR reduces power during idle cycles without compromising refresh reliability. |
Use Scenario: LTE/5G baseband processing in outdoor macrocells exposed to wide thermal swings and EMI-rich RF environments. IC Role / Device Role / Timing Role: High-bandwidth buffer for FFT, channel estimation, and modulation/demodulation pipelines running on multi-core DSPs. Use Value: DDR3-1866 data rate sustains >1.4 GB/s sustained throughput; dynamic ODT maintains signal integrity across variable load conditions. |
| Medical Imaging Controller | Ruggedized Edge AI Gateway |
Use Scenario: DICOM image reconstruction pipeline in portable ultrasound or X-ray units requiring zero-fan design and long-term reliability. IC Role / Device Role / Timing Role: Frame buffer and intermediate result storage for GPU-accelerated rendering and noise reduction algorithms. Use Value: ASR mode guarantees uninterrupted operation during thermal transients; write leveling ensures timing margin in compact, high-layer-count PCBs. |
Use Scenario: AI inference at network edge in transportation or energy monitoring systems deployed in uncontrolled environments. IC Role / Device Role / Timing Role: Main memory for NPU or low-power SoC running TensorFlow Lite models with frequent weight reloads. Use Value: VFBGA78 package enables compact layout; 1.5 V SSTL_15 interface minimizes crosstalk in mixed-signal boards with analog sensors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256BL-125KBL | 16-bit bus width (x16), 2 Gb density, DDR3L-1250 (1.35 V), −40°C to +95°C | Requires board redesign for x16 interface; lower voltage reduces power but limits compatibility with 1.5 V controllers | Select if system uses DDR3L-only power rails and needs wider data path; not drop-in compatible with W632GG8MB11J's x8 interface |
| MT41K256M8RH-125:E | 256 M × 8, DDR3L-1250, −40°C to +95°C, 96-ball FBGA, Micron Advanced BGA | Same x8 organization but different ball map and timing parameters; lacks PASR and industrial-plus temp support | Choose for cost-sensitive designs where extended temperature is not required; verify PCB layout and MR register programming against Micron's spec |
Compared with IS43TR16256BL-125KBL and MT41K256M8RH-125:E, W632GG8MB11J uniquely delivers x8 DDR3-1866 performance with full industrial-plus thermal range, PASR, and ASR-enabling fanless, high-reliability deployment without voltage or interface compromise.
Availability
W632GG8MB11J is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and medical electronics requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for W632GG8MB11J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GG8MB11J belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for high-reliability embedded systems demanding extended temperature operation, low-power self-refresh modes, and JEDEC-compliant signal integrity.
FAQ
What is the maximum supported CAS latency for W632GG8MB11J?
W632GG8MB11J supports programmable CAS latency settings of CL = 5, 6, 8, 10, and 13. CL = 13 is the highest validated setting for DDR3-1866 (13-13-13) operation at −40°C to +105°C. CL = 7 and CL = 9 are not supported in the -11J speed grade per the official datasheet's Sup_CL table.
Does W632GG8MB11J require external termination resistors?
No, W632GG8MB11J integrates on-die termination (ODT) for DQ, DQS/DQS#, and DM signals, configurable via MR1 and MR2 registers. External termination is unnecessary when ODT is enabled, though a 240 Ω ±1 % ZQ reference resistor must be connected to the ZQ pin for calibration.
Can W632GG8MB11J operate at 1.35 V?
No, W632GG8MB11J is specified exclusively for 1.5 V ± 0.075 V operation (VDD/VDDQ). It is not a DDR3L device and does not support 1.35 V operation. Using 1.35 V will violate DC operating conditions and may cause functional failure or data corruption.
How is thermal management handled in W632GG8MB11J above 95°C?
At case temperatures above 95°C, W632GG8MB11J mandates either Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b or 11b) or Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 01b) to maintain tREFI = 3.9 µS. This doubles refresh frequency to prevent data loss without host intervention.
Is W632GG8MB11J pin-compatible with other Winbond DDR3 parts like W632GG8MB-11?
Yes, W632GG8MB11J shares identical VFBGA78 pinout and ball assignment with W632GG8MB-11 and W632GG8MB11I. The only differences are temperature qualification (105°C vs. 95°C vs. 85°C) and minor AC parameter tolerances-no PCB layout change is needed when upgrading within the same speed grade.
W632GG8MB11J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GG8MB11J FAQ
1.How can I place an order for W632GG8MB11J through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8MB11J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8MB11J reliable?
The price and inventory of W632GG8MB11J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8MB11J is usually 5 days.
3.What payment methods are accepted for W632GG8MB11J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8MB11J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8MB11J?
W632GG8MB11J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8MB11J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8MB11J?
For technical support, including W632GG8MB11J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8MB11J requirements.
6.How does Aetrix verify that W632GG8MB11J is sourced from the original manufacturer or authorized distributors?
All W632GG8MB11J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8MB11J meets industry standards.
7.What is the process for return or replacement of W632GG8MB11J?
All W632GG8MB11J units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8MB11J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8MB11J part is unused and in its original packaging.
Return procedure for W632GG8MB11J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8MB11J Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT24C08C-STUM-T
Microchip Technology
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