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Winbond Electronics Corporation W632GG8NB09I TR

Name: W632GG8NB09I TR
Brand: Winbond Electronics Corporation
SKU: W632GG8NB09I TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GG8NB09I TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W632GG8NB09I TR.pdf

Description:: IC DRAM 2GBIT SSTL 15 78VFBGA

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Product details

Overview

W632GG8NB09I TR from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR3-2133 speed (1066 MHz clock, CL=14, tRCD=tRP=14 ns), with industrial temperature support (–40°C to +95°C), VDD/VDDQ = 1.5 V ± 75 mV, and SSTL_15 interface - used as main memory in embedded networking, industrial HMIs, and edge AI inference modules requiring high-bandwidth, low-latency DRAM.

For engineers reviewing the W632GG8NB09I TR datasheet, W632GG8NB09I TR pinout, W632GG8NB09I TR application, or W632GG8NB09I TR equivalent, this page delivers verified DDR3 timing parameters, ball mapping, ODT configuration options, ZQ calibration behavior, and industrial-grade thermal derating guidance directly applicable to PCB layout, signal integrity analysis, and JEDEC-compliant initialization firmware.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe I/O. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Key control features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQS-to-DQ skew compensation - all compliant with JEDEC JESD79-3F specification.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - defines total addressable space and row/column/bank decoding structure.
Data Rate	DDR3-2133 (2133 MT/s, fCK = 1066 MHz) - sets maximum sustained bandwidth of 17.06 GB/s in burst mode.
CAS Latency	CL = 14 (tAA = 13.09 ns min) - determines minimum read access latency from ACT to first data valid at DQ.
Supply Voltage	VDD = VDDQ = 1.5 V ± 0.075 V - constrains power delivery design and requires tight regulation for stable operation.
Operating Temperature	–40°C ≤ TCASE ≤ +95°C - mandates thermal margining in industrial enclosures and validates extended refresh interval (tREFI = 3.9 µs above 85°C).
Interface Standard	SSTL_15 - defines input threshold (0.75 V), output swing (±0.2 V), and termination requirements for signal integrity.
Package	VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, lead-free, RoHS) - dictates PCB pad layout, thermal via placement, and reflow profile.

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type construction optimized for thermal dissipation and board-level reliability in industrial environments.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column address bits for bank/row/column selection; A12–A14 also encode mode register settings during MRS.
BA0–BA2	Bank Address	Selects one of eight internal banks; required for all ACT, READ, WRITE, PRE commands.
CK / CK#	Differential Clock	Edge-triggered command/address latch point; inputs sampled at crosspoint (CK rising / CK# falling); defines all timing windows.
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; source-synchronous with DQS/DQS#; supports BL8 and BC4 burst modes.
DQS / DQS#	Differential Strobe	Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data; enables timing capture at receiver.
DM	Data Mask	Per-byte write mask; active-high to suppress corresponding DQ byte during WRITE bursts - critical for partial writes.
RESET#	Asynchronous Reset	Active-low, level-sensitive input; initiates power-up initialization sequence and forces device into known state independent of clock.
ODT	On-Die Termination Control	Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines per MR1/MR2 settings.
WE#, RAS#, CAS#	Command Inputs	Standard DDR3 command encoding (e.g., WE# low + RAS# low + CAS# low = ACT; WE# high + RAS# high + CAS# low = READ).

Key Features

Feature	Design Value
Programmable CWL	CAS Write Latency configurable per frequency (CWL = 5–10), enabling precise write timing alignment across speed bins.
ZQ Calibration	One-time or periodic calibration using external 240 Ω resistor to adjust output driver strength and ODT impedance within ±10% tolerance.
Dynamic ODT	RTT_WR impedance activated only during WRITE operations, reducing standby power and improving signal integrity on bidirectional DQ bus.
Write Leveling	Hardware-assisted DQS-to-DQ delay adjustment via MPR pattern readback, essential for timing closure at DDR3-2133 speeds.
Partial Array Self Refresh	PASR (MR2 A1–A3) allows selective self-refresh of 1/2, 1/4, or 1/8 of memory array - cuts IDD6 current by up to 75% in idle states.

Applications

Industrial HMI Memory Buffer	Network Packet Buffer
Use Scenario: Touchscreen-based human-machine interface in factory automation panels running real-time Linux with graphics acceleration. IC Role / Device Role / Timing Role: Primary working memory for framebuffer, UI rendering stack, and local firmware execution - accessed via ARM Cortex-A9/A15 AXI bus with DDR3 controller. Use Value: DDR3-2133 bandwidth sustains 1080p60 video overlay + multitouch event handling; industrial temp rating ensures reliability in uncooled metal enclosures.	Use Scenario: Layer-3 switch buffering 10 GbE packet streams with deep buffer queues for QoS and traffic shaping. IC Role / Device Role / Timing Role: Shared packet buffer memory for ingress/egress queues, managed by integrated switch fabric controller with DDR3 PHY. Use Value: 256 MB capacity supports >200 ms of full-line-rate buffering at 10 Gbps; low tRC (46.09 ns) enables rapid queue allocation/deallocation.
Edge AI Inference Accelerator	Medical Imaging Data Cache
Use Scenario: Compact vision processing unit executing CNN inference on FPGA-accelerated edge devices for defect detection in production lines. IC Role / Device Role / Timing Role: Off-chip weight/data cache for convolutional layers - accessed via AXI4-Stream or custom DMA engine with burst coalescing. Use Value: BL8 burst mode delivers 8×8-bit data per transaction; CAS latency tuning (CL=14) matches FPGA memory controller timing margins.	Use Scenario: Portable ultrasound machine storing real-time beamformed RF data before GPU-based image reconstruction. IC Role / Device Role / Timing Role: High-throughput circular buffer for raw channel data acquisition - interfaced to ADC controller with precise DQS-aligned sampling. Use Value: Differential DQS/DQS# and write leveling ensure <10 ps DQ-to-DQS skew at 1066 MHz; PASR reduces power during idle scan periods.

Industrial HMI Memory Buffer

Network Packet Buffer

Use Scenario: Touchscreen-based human-machine interface in factory automation panels running real-time Linux with graphics acceleration.

IC Role / Device Role / Timing Role: Primary working memory for framebuffer, UI rendering stack, and local firmware execution - accessed via ARM Cortex-A9/A15 AXI bus with DDR3 controller.

Use Value: DDR3-2133 bandwidth sustains 1080p60 video overlay + multitouch event handling; industrial temp rating ensures reliability in uncooled metal enclosures.

Use Scenario: Layer-3 switch buffering 10 GbE packet streams with deep buffer queues for QoS and traffic shaping.

IC Role / Device Role / Timing Role: Shared packet buffer memory for ingress/egress queues, managed by integrated switch fabric controller with DDR3 PHY.

Use Value: 256 MB capacity supports >200 ms of full-line-rate buffering at 10 Gbps; low tRC (46.09 ns) enables rapid queue allocation/deallocation.

Edge AI Inference Accelerator

Medical Imaging Data Cache

Use Scenario: Compact vision processing unit executing CNN inference on FPGA-accelerated edge devices for defect detection in production lines.

IC Role / Device Role / Timing Role: Off-chip weight/data cache for convolutional layers - accessed via AXI4-Stream or custom DMA engine with burst coalescing.

Use Value: BL8 burst mode delivers 8×8-bit data per transaction; CAS latency tuning (CL=14) matches FPGA memory controller timing margins.

Use Scenario: Portable ultrasound machine storing real-time beamformed RF data before GPU-based image reconstruction.

IC Role / Device Role / Timing Role: High-throughput circular buffer for raw channel data acquisition - interfaced to ADC controller with precise DQS-aligned sampling.

Use Value: Differential DQS/DQS# and write leveling ensure <10 ps DQ-to-DQS skew at 1066 MHz; PASR reduces power during idle scan periods.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M8RH-125:E	Same density (2 Gb), VFBGA-78, DDR3L (1.35 V), CL=9 @ 1066 MHz (vs. CL=14 @ 1066 MHz); lower voltage but higher latency at same clock.	Targeted at ultra-low-power portable medical devices; not rated for –40°C to +95°C industrial operation.	Select when system-wide DDR3L compliance and reduced power dominate over latency-critical throughput.
IS43TR16256B-125KBL	16-bit bus (vs. 8-bit), 2 Gb density, VFBGA-96, DDR3-1600 (800 MHz), CL=11; wider bus but slower max rate and different package.	Used in x86-based industrial PCs where 64-bit memory channels require 16-bit components; incompatible pinout and timing model.	Select only when board redesign accommodates 96-ball layout and 16-bit interface; not drop-in replaceable.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GG8NB09I TR uniquely combines industrial temperature range, DDR3-2133 performance, 8-bit narrow bus, and VFBGA-78 compatibility - making it optimal for space-constrained, thermally demanding embedded systems without voltage scaling or bus widening.

Availability

W632GG8NB09I TR is available at Aetrix Electronics and suitable for industrial HMIs, network packet buffers, edge AI accelerators, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG8NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB product line delivers JEDEC-compliant DDR3 SDRAM optimized for reliability in harsh environments, with emphasis on extended temperature operation, robust initialization sequences, and system-level calibration features like write leveling and MPR.

FAQ

What is the maximum supported data rate for W632GG8NB09I TR?

The W632GG8NB09I TR supports DDR3-2133 operation at 1066 MHz clock frequency with CL=14, tRCD=tRP=14 ns, and tRC=46.09 ns minimum. This is validated across its full industrial temperature range (–40°C to +95°C) and requires strict adherence to JEDEC JESD79-3F AC timing parameters and VDD/VDDQ = 1.5 V ± 75 mV supply stability. The W632GG8NB09I TR achieves this using DLL-aligned DQS-to-DQ timing and write leveling calibration.

Does W632GG8NB09I TR support dynamic on-die termination (ODT)?

Yes, the W632GG8NB09I TR supports Dynamic ODT (Rtt_WR) as defined in MR2, allowing on-the-fly activation of termination impedance on DQ/DQS/DM lines during WRITE operations only. This feature improves signal integrity on bidirectional buses while reducing standby power consumption compared to static ODT. Configuration is done via MR2 bit A2 (Rtt_WR), with impedance values selectable from 120 Ω, 60 Ω, or 40 Ω depending on MR1 settings. The W632GG8NB09I TR implements this per JEDEC specification without requiring external resistors.

How does the RESET# pin function on W632GG8NB09I TR?

The RESET# pin on the W632GG8NB09I TR is an asynchronous, active-low input that forces the device into a known precharge-all state and initiates the power-up initialization sequence regardless of clock or supply stability. When asserted, it clears internal registers, disables DLL, and resets mode registers to default values. Release of RESET# must occur after VDD/VDDQ stabilize and before CK/CK# start toggling. This behavior is mandatory for reliable boot in industrial systems and is fully documented in section 9.2 of the W632GG8NB09I TR datasheet.

What package type and ball count does W632GG8NB09I TR use?

The W632GG8NB09I TR uses a VFBGA-78 package: 78-ball very thin fine-pitch ball grid array measuring 8 mm × 10.5 mm with 1.0 mm height, constructed with lead-free materials and RoHS compliance. Ball pitch is 0.8 mm, and the "window" design enhances thermal transfer to the PCB. This package is identical across all W632GG8NB speed grades and is optimized for automated assembly and thermal reliability in industrial applications. The W632GG8NB09I TR's ball map is defined in sections 6 and 7 of its datasheet.

Can W632GG8NB09I TR operate at temperatures above +95°C?

No, the W632GG8NB09I TR is rated for –40°C ≤ TCASE ≤ +95°C only. While the -09J variant supports up to +105°C, the "09I" suffix explicitly denotes industrial grade with upper limit of +95°C. Operation beyond this violates JEDEC specification and invalidates timing parameters - especially tREFI, which must be halved to 3.9 µS above +85°C and requires MR2 configuration (A6=1b for ASR or A6=0b+A7=1b for Manual Self-Refresh). The W632GG8NB09I TR does not guarantee functionality or reliability above +95°C.

W632GG8NB09I TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: SSTL_15

Clock Frequency:: 1.066 GHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W632GG8NB09I TR FAQ

1.How can I place an order for W632GG8NB09I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG8NB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG8NB09I TR reliable?

The price and inventory of W632GG8NB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8NB09I TR is usually 5 days.

3.What payment methods are accepted for W632GG8NB09I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8NB09I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG8NB09I TR?

W632GG8NB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG8NB09I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG8NB09I TR?

For technical support, including W632GG8NB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8NB09I TR requirements.

6.How does Aetrix verify that W632GG8NB09I TR is sourced from the original manufacturer or authorized distributors?

All W632GG8NB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8NB09I TR meets industry standards.

7.What is the process for return or replacement of W632GG8NB09I TR?

All W632GG8NB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8NB09I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG8NB09I TR part is unused and in its original packaging.

Return procedure for W632GG8NB09I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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