Winbond Electronics Corporation W632GG8NB-09 TR

Overview

W632GG8NB-09 TR from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, supporting DDR3-2133 (1066 MHz clock, CL=14, tAA=13.09 ns), 1.5 V core/I/O supply, and VFBGA-78 (8 mm × 10.5 mm) packaging. It delivers high-bandwidth memory for embedded computing, industrial HMIs, and network edge devices requiring stable JEDEC-compliant DDR3 operation at extended temperature.

For engineers reviewing the W632GG8NB-09 TR datasheet, W632GG8NB-09 TR pinout, W632GG8NB-09 TR application, or W632GG8NB-09 TR equivalent, key selection criteria include DDR3-2133 timing compliance (14-14-14), industrial-grade thermal range (0°C to 95°C case), on-die termination (ODT) programmability, ZQ calibration support, and differential clock (CK/CK#) and strobe (DQS/DQS#) interface requirements.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing for precise source-synchronous data capture, and programmable CAS latency (CL = 5–14) and CAS write latency (CWL = 5–10). It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and bi-directional differential strobes edge-aligned on reads and center-aligned on writes.

Functional features include asynchronous RESET#, auto-precharge, burst refresh, partial array self-refresh (PASR), dynamic ODT (Rtt_WR), write leveling, multi-purpose register (MPR) for calibration pattern readout, and ZQ calibration using an external 240 Ω resistor. All command/address inputs are sampled at the CK/CK# crosspoint, and I/Os conform to SSTL_15 signaling.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type ball layout per JEDEC MO-245. Ball pitch is 0.8 mm; balls arranged in staggered rows (A–H, 1–10, excluding A1/A10/B1/H10).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16TW-107:A and IS43TR16256B-125KBL, the W632GG8NB-09 TR uniquely delivers DDR3-2133 performance in a cost-optimized x8 configuration with integrated write leveling, PASR, and TDQS - making it optimal for space-constrained industrial controllers needing maximum bandwidth per mm².

Availability

W632GG8NB-09 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply with guaranteed long-term availability and JEDEC-compliant DDR3-2133 operation.

Supply support for W632GG8NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted firmware storage, serving industrial, automotive, and communications markets since 1987.

The W632GG8NB series belongs to Winbond's DDR3 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant high-speed memory with advanced power management and calibration features.

FAQ

What is the maximum data rate supported by the W632GG8NB-09 TR?

The W632GG8NB-09 TR supports DDR3-2133 operation at 2133 MT/s (1066 MHz clock frequency), corresponding to the -09 speed grade. This is validated with CL=14, tRCD=tRP=13.09 ns minimum, and full JEDEC AC/DC specifications across 0°C to 95°C case temperature. The device achieves this using DLL-aligned DQ/DQS timing and SSTL_15 I/O signaling.

Does the W632GG8NB-09 TR support write leveling and how is it implemented?

Yes, the W632GG8NB-09 TR supports hardware-assisted write leveling. It uses the Multi-Purpose Register (MPR) to output a predefined 128-bit calibration pattern (0x00000000) during READ commands. The memory controller adjusts DQS delay until valid data is captured, then applies that offset to all DQS lines. This procedure is defined in section 9.9 of the W632GG8NB datasheet and requires no external components.

What package type and ball count does the W632GG8NB-09 TR use?

The W632GG8NB-09 TR uses a VFBGA-78 package: a 8 mm × 10.5 mm window-type ball grid array with 1.0 mm thickness, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. It contains 78 solder balls arranged in staggered rows (A–H, 1–10), with dedicated VDD, VDDQ, VSS, and signal balls as documented in section 6 (Ball Configuration) of the datasheet.

Can the W632GG8NB-09 TR operate at temperatures above 85°C?

Yes, the W632GG8NB-09 TR is rated for 0°C ≤ TCASE ≤ 95°C. At 85°C < TCASE ≤ 95°C, auto-refresh interval must be halved (tREFI = 3.9 µS) using either Manual Self-Refresh with MR2[A6]=0 and MR2[A7]=1, or Auto Self-Refresh (ASR) with MR2[A6]=1. This requirement is specified in section 4 (KEY PARAMETERS) note 4 of the W632GG8NB datasheet.

What termination options are available on the W632GG8NB-09 TR?

The W632GG8NB-09 TR supports programmable on-die termination (ODT) via MR1 and MR2. It offers nominal ODT (Rtt_NOM) values of 120 Ω, 60 Ω, and 40 Ω, and dynamic ODT (Rtt_WR) values of 120 Ω and 60 Ω during WRITE operations. Termination is configurable per DQ/DQS group and controlled by the ODT pin and mode register settings per JEDEC DDR3 specification.