Winbond Electronics Corporation W632GG8NB-11

Overview

W632GG8NB-11 from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, compliant with JEDEC DDR3-1866 (13-13-13) timing, operating at 1.5 V supply with SSTL_15 interface, and packaged in a 78-ball VFBGA (8 mm × 10.5 mm). It delivers high-bandwidth memory for embedded computing, networking infrastructure, and industrial control systems requiring stable 1866 MT/s data transfer.

For engineers reviewing the W632GG8NB-11 datasheet, W632GG8NB-11 pinout, W632GG8NB-11 application, or W632GG8NB-11 equivalent, key selection considerations include its DDR3-1866 speed bin, -40°C to +95°C industrial temperature range, programmable CAS latency (CL = 5–13), on-die termination (ODT), ZQ calibration support, and differential clock/data strobe architecture.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous I/O referenced to differential CK/CK# and DQS/DQS#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional operation includes asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and dynamic ODT (Rtt_WR) with programmable termination impedances during write operations - all governed by mode registers MR0–MR3.

Key Specifications

Pinout & Package

Packaged in a lead-free, RoHS-compliant 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) measuring 8 mm × 10.5 mm × 1.0 mm (Window BGA Type), optimized for high-density PCB layouts and thermal performance in space-constrained applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GG8NB-11 uniquely combines DDR3-1866 speed, wide CL/CWL programmability, PASR, and ASR in a compact 78-ball VFBGA - making it optimal for thermally constrained, high-throughput industrial and networking platforms needing firmware-agnostic thermal management.

Availability

W632GG8NB-11 is available at Aetrix Electronics and suitable for industrial PLC controllers, network packet processors, medical imaging systems, avionics display units, and embedded vision applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG8NB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, robust signal integrity features (ZQ, ODT, write leveling), and JEDEC-compliant timing across multiple speed bins.

FAQ

What is the maximum data rate supported by the W632GG8NB-11?

The W632GG8NB-11 supports a maximum data rate of 1866 MT/s (DDR3-1866), corresponding to a 933 MHz differential clock frequency with 13-13-13 CL/tRCD/tRP timing. This is validated under 0°C to 95°C case temperature and 1.5 V ±0.075 V supply conditions per JEDEC specification.

Does the W632GG8NB-11 support on-die termination (ODT) and how is it configured?

Yes, the W632GG8NB-11 supports programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM lines. ODT values (e.g., 60 Ω, 120 Ω) are set via MR1 bits A9–A7, and dynamic ODT (Rtt_WR) is enabled through MR2. Configuration occurs during mode register set (MRS) commands and remains active until reprogrammed.

What temperature range is guaranteed for the W632GG8NB-11?

The W632GG8NB-11 is specified for 0°C ≤ TCASE ≤ 95°C operation with full JEDEC AC/DC compliance. Unlike industrial-grade variants (e.g., W632GG8NB11I), it does not support -40°C operation - this is explicitly stated in the order information table and confirmed in Section 4 notes.

How does the W632GG8NB-11 handle refresh at elevated temperatures?

At case temperatures above 85°C, the W632GG8NB-11 requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is implemented either via Auto Self-Refresh (ASR) mode (MR2 A6 = 1) or Manual Self-Refresh with extended temperature capability (MR2 A6 = 0, A7 = 1), both supported in the W632GG8NB-11.

Is write leveling supported on the W632GG8NB-11 and what is its purpose?

Yes, the W632GG8NB-11 fully supports write leveling per JEDEC DDR3 specification. It allows the memory controller to calibrate DQ-to-DQS timing skew per byte lane before normal operation, ensuring setup/hold margin compliance at 1866 MT/s - a mandatory step for reliable high-speed writes in the W632GG8NB-11.