Winbond Electronics Corporation W632GG8NB11I

Overview

W632GG8NB11I from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1866 speed (13-13-13 CL), with 1.5 V supply, industrial temperature range (−40°C to +95°C), and VFBGA78 (8 mm × 10.5 mm) packaging. It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring reliable high-bandwidth data buffering.

For engineers reviewing the W632GG8NB11I datasheet, W632GG8NB11I pinout, W632GG8NB11I application, or W632GG8NB11I equivalent, key selection considerations include its DDR3-1866 timing compliance, programmable CAS Write Latency (CWL = 5–9), on-die termination (ODT) support for both static and dynamic modes, ZQ calibration capability, and industrial-grade thermal reliability up to 95°C case temperature.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, supporting posted CAS with additive latency (AL = 0, CL−1, CL−2) to improve bus efficiency.

It supports full JEDEC DDR3 features including auto-precharge, burst refresh, partial array self-refresh (PASR), asynchronous RESET#, write leveling for timing calibration, multi-purpose register (MPR) readout of calibration patterns, and dynamic ODT (Rtt_WR) with selectable impedances during write operations - all configurable via mode registers MR0–MR3.

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm thickness) with ball pitch of 0.8 mm, compliant with JEDEC MO-276AA. Ball layout follows standard DDR3 SDRAM pinout for address/command/data/strobe/termination signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG8NB11I, IS43TR16256BL-125KBL offers DDR3L voltage savings but demands layout change, while MT41K256M8DA-125:E provides Micron's reliability pedigree but omits PASR and true industrial −40°C startup assurance - making W632GG8NB11I optimal for thermally demanding, space-constrained embedded systems needing feature-rich DDR3 operation.

Availability

W632GG8NB11I is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, medical imaging subsystems, and railway signaling controllers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W632GG8NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, robust signal integrity features (write leveling, MPR, ZQ), and JEDEC-compliant reliability under harsh environmental conditions.

FAQ

What is the maximum supported CAS Latency for W632GG8NB11I at DDR3-1866 speed?

W632GG8NB11I supports CAS Latency settings of 5, 6, 7, 8, 9, 10, 11, and 13 at DDR3-1866 speed. CL=13 is the highest validated setting for this speed grade, delivering tAA = 13.91 ns minimum with full JEDEC AC compliance across −40°C to +95°C. CL=14 is not supported in the -11/11I/11J speed bin per datasheet Table 4.

Does W632GG8NB11I require external termination resistors on DQ or DQS lines?

No, W632GG8NB11I does not require external termination resistors on DQ or DQS lines because it integrates programmable on-die termination (ODT) with selectable impedances (RTT_NOM and RTT_WR). The ZQ pin connects only to a single 240 Ω ±1% external resistor for calibration - no pull-up/down or series termination is needed on data or strobe nets.

Can W632GG8NB11I operate reliably at 105°C case temperature?

No, W632GG8NB11I is rated for −40°C ≤ T_CASE ≤ +95°C only. For operation up to +105°C, the 11J variant (W632GG8NB11J) must be used - it includes enhanced refresh management (doubled tREFI = 3.9 µs) and MR2 configuration support for Auto Self-Refresh (ASR) or Manual Self-Refresh with Extended Temperature Range.

How is write leveling implemented with W632GG8NB11I?

W632GG8NB11I supports write leveling via its dedicated MPR mode and DQS gating logic. The controller asserts MRS to enter MPR mode, then issues write commands while monitoring DQS feedback on the DQ bus. Internal logic adjusts DQS delay per byte lane until edge alignment with CK is achieved - all calibrated using the predefined MPR pattern stored in the device.

What is the purpose of the ZQ pin on W632GG8NB11I, and how should it be connected?

The ZQ pin on W632GG8NB11I serves as the reference connection for on-die calibration of output driver strength and ODT resistance values. It must be connected to a single 240 Ω ±1% resistor tied to ground, with minimal trace length (<5 mm) and no stubs. No capacitors or additional components are permitted on the ZQ net per datasheet Section 9.18.3.