Winbond Electronics Corporation W632GG8NB11I TR

Overview

W632GG8NB11I TR from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 11, or 10. It features 8 internal banks, 8-bit prefetch, SSTL_15 interface, and industrial temperature range (–40°C to +95°C). It is used in embedded computing, networking infrastructure, and industrial control systems requiring high-bandwidth, low-latency memory.

For engineers reviewing the W632GG8NB11I TR datasheet, W632GG8NB11I TR pinout, W632GG8NB11I TR application, or W632GG8NB11I TR equivalent, key selection considerations include its DDR3-1866 speed grade, industrial-grade thermal rating, VFBGA78 package, on-die termination (ODT), ZQ calibration support, and programmable CAS Write Latency (CWL = 5–9).

Technical Context

This DDR3 SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to the clock, enabling precise timing at high frequencies.

It supports full JEDEC-compliant DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths of 8 or 4 (OTF selectable), partial array self-refresh (PASR), dynamic ODT (Rtt_WR), and write leveling for system-level timing calibration.

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm height, 0.8 mm ball pitch), RoHS-compliant, lead-free construction. Ball grid arranged in 9 rows × 9 columns with corner balls omitted (total 78 signal/power/ground terminals).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GG8NB11I TR uniquely combines industrial temperature range, DDR3-1866 performance, write leveling, PASR, and MPR in an 8-bit x78-ball footprint-enabling drop-in compatibility in legacy DDR3-1866 designs without voltage or layout changes.

Availability

W632GG8NB11I TR is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG8NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based global supplier of specialty DRAM, flash memory, and microcontrollers, founded in 1987 and publicly listed since 1995.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications in harsh thermal environments and long-lifecycle embedded systems.

FAQ

What is the maximum clock frequency supported by W632GG8NB11I TR?

W632GG8NB11I TR supports a maximum clock frequency of 933 MHz, corresponding to DDR3-1866 operation (1866 MT/s data rate). This is validated under industrial temperature conditions (–40°C to +95°C) and requires CL = 13, tRCD/tRP = 13 ns, and proper VDD/VDDQ regulation within 1.5 V ± 0.075 V. The device also supports lower speed bins (DDR3-1600, DDR3-1333) via mode register configuration.

Does W632GG8NB11I TR support write leveling, and how is it implemented?

Yes, W632GG8NB11I TR supports hardware-assisted write leveling per JEDEC DDR3 specification. It is initiated via MRS command to enter write leveling mode, where the DRAM returns a predefined MPR pattern while the controller adjusts per-byte DQS-to-CK delay. This calibrates skew across the 8-bit DQ/DQS interface, ensuring setup/hold compliance at 933 MHz. Exit is performed using a dedicated MRS command.

What is the purpose of the RESET# pin on W632GG8NB11I TR, and is it required for normal operation?

The RESET# pin on W632GG8NB11I TR is an asynchronous, active-low input that initiates power-up initialization and mode register reset. It is required before first access to ensure DLL lock, internal state consistency, and proper MR loading. While not needed during runtime, omitting RESET# assertion at power-on may result in undefined behavior or failure to meet tINIT specifications. Pull-up is mandatory per datasheet.

Can W632GG8NB11I TR operate at DDR3-2133 speed?

No, W632GG8NB11I TR is rated for DDR3-1866 (13-13-13) only. The "11I" suffix denotes the -11I speed grade, which guarantees tAA/tRCD/tRP ≤ 13.91 ns at 933 MHz. DDR3-2133 operation requires the -09I variant (W632GG8NB09I), which has tighter AC timing and different speed bin qualification. Attempting DDR3-2133 timing on W632GG8NB11I TR violates JEDEC limits and risks data corruption.

What termination options does W632GG8NB11I TR provide for DQ/DQS lines?

W632GG8NB11I TR provides programmable on-die termination (ODT) for DQ, DQS, and DM lines, with selectable Rtt_NOM values (60 Ω, 120 Ω, 40 Ω) and Rtt_WR (60 Ω, 120 Ω) activated dynamically during writes. Termination is controlled via MR1/MR2 and enabled by the ODT pin. No external resistors are required for stub-matched point-to-point topologies, simplifying layout and improving signal integrity at 933 MHz.