Winbond Electronics Corporation W632GG8NB-11 TR
- Part No.:
- W632GG8NB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GG8NB-11 TR.pdf
- Description:
- IC DRAM 2GBIT SSTL 15 78VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,548
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Product details
Overview
W632GG8NB-11 TR from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 11, or 10. It features on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for reliable memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W632GG8NB-11 TR datasheet, W632GG8NB-11 TR pinout, W632GG8NB-11 TR application, or W632GG8NB-11 TR equivalent, key selection criteria include its VFBGA-78 package, SSTL_15 interface compliance, -40°C to 95°C industrial temperature range, and support for write leveling, multi-purpose register (MPR), and dynamic ODT for high-signal-integrity DDR3 designs.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL-aligned DQS-DQ timing, posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), and bi-directional differential strobes ensure precise source-synchronous data capture at 1866 MT/s.
It supports full JEDEC-compliant power management: Precharged/Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR). The device uses asynchronous RESET# for initialization and includes ZQ calibration for output driver and ODT impedance tuning via external 240 Ω resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacity | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits |
| Data Rate | DDR3-1866 (1866 MT/s), 933 MHz clock frequency |
| CAS Latency | CL = 13, 11, or 10 (JEDEC-compliant 13-13-13 timing) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for stable DDR3 signaling |
| Operating Temp | -40°C to +95°C case temperature - qualified for extended industrial environments |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Interface | SSTL_15 - mandates matched-impedance routing and proper termination design |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires controller refresh scheduling support |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with ball pitch of 0.8 mm. RoHS-compliant, lead-free construction. Window BGA type enables optical alignment during assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits; A12–A14 also used for mode register programming |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-triggered command latch point; inputs sampled at CK rising / CK# falling crosspoint |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; SSTL_15 compatible with controlled slew rate |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe; center-aligned on write, edge-aligned on read |
| DM | Data Mask | Per-byte write mask; active-high, sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Active-low; initiates power-up initialization sequence and resets internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors per command |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command pins; decoded on every CK rising edge |
| VDD / VDDQ | Power Supplies | Separate 1.5 V supplies for core (VDD) and I/O (VDDQ); require independent decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | Supports CWL = 5–9; sets write latency WL = AL + CWL for precise timing closure in high-speed writes |
| ZQ Calibration | Uses external 240 Ω resistor to calibrate output driver strength and ODT impedance - critical for signal integrity at 1866 MT/s |
| Write Leveling | Enables per-device DQS-to-CK skew compensation during initialization - required for robust multi-drop DDR3 interfaces |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for system-level timing calibration - eliminates need for external test patterns |
| Dynamic ODT (Rtt_WR) | Activates ODT only during write bursts - reduces noise and improves signal fidelity without impacting read performance |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - extends battery life in portable industrial devices |
Applications
| Industrial PLC Memory Buffer | Network Router Packet Buffer |
|---|---|
Use Scenario: Real-time control logic execution with deterministic memory access in programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory storing firmware, I/O mapping tables, and real-time process variables. Use Value: DDR3-1866 bandwidth and low-latency CL13 operation enable sub-microsecond response times for motion control loops. | Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers handling 10 Gbps+ traffic. IC Role / Device Role / Timing Role: Shared packet buffer supporting simultaneous ingress/egress DMA channels with burst coalescing. Use Value: Eight-bank concurrency and 1K-page size allow overlapping refresh with active transfers, sustaining >95% utilization under sustained load. |
| Medical Imaging Front-End Controller | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Frame buffering and real-time image processing in ultrasound and digital X-ray acquisition systems. IC Role / Device Role / Timing Role: Dual-role memory: stores raw sensor data pre-processing and holds calibrated lookup tables for post-processing. Use Value: Write leveling and MPR support ensure reliable timing margin across temperature extremes encountered in clinical environments. | Use Scenario: Storage of high-fidelity test vectors and expected response signatures in semiconductor ATE platforms. IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to precision clock generators and jitter-cleaned strobes. Use Value: SSTL_15 interface and dynamic ODT minimize setup/hold violations during 1866 MT/s vector streaming, reducing pattern error rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same 2 Gb density, VFBGA-78, DDR3-1866, but supports -40°C to +105°C and includes enhanced reliability features (e.g., ECC-ready interface) | Preferred for automotive ADAS modules requiring extended temperature and functional safety readiness | Choose if operating above 95°C or requiring JEDEC JESD22-A108 qualification |
| IS43TR16256B-125KBL | 16-bit bus width (vs. 8-bit), same speed grade and package footprint; requires PCB redesign for x16 interface | Used in high-bandwidth FPGA-based accelerators where wider data path justifies layout change | Choose only when system bandwidth demand exceeds 1866 MT/s × 8-bit and board revision is feasible |
Compared with MT41K256M8DA-125:A, W632GG8NB-11 TR offers lower cost and identical timing at 95°C max, but lacks extended temp rating and ECC support; versus IS43TR16256B-125KBL, it avoids x16 layout complexity while delivering matched 1866 MT/s throughput per byte lane.
Availability
W632GG8NB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for W632GG8NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, RAM, and trusted computing ICs.
The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical embedded systems operating across extended temperature ranges and demanding signal integrity requirements.
FAQ
What is the maximum supported CAS Latency for W632GG8NB-11 TR?
W632GG8NB-11 TR supports CAS Latency settings of 13, 11, and 10 per JEDEC DDR3-1866 specification. CL13 is the default and fully characterized timing for the -11 speed grade, delivering tAA = 13.91 ns and tRCD = 13.91 ns at 933 MHz. Lower CL values may be enabled via mode register programming but require validation against system timing margins.
Does W632GG8NB-11 TR support write leveling and how is it implemented?
Yes, W632GG8NB-11 TR supports write leveling as defined in JEDEC DDR3 standard. It uses the DQS strobe in conjunction with the MPR to perform per-device skew calibration during initialization. The controller issues a write leveling command, and the DRAM returns a known pattern on DQ while adjusting DQS delay until edge alignment with CK is achieved - a mandatory step for stable 1866 MT/s operation.
What package type and ball count does W632GG8NB-11 TR use?
W632GG8NB-11 TR uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm height, 0.8 mm ball pitch, and 78 solder balls arranged in a window BGA configuration. This RoHS-compliant, lead-free package is optimized for automated assembly and thermal performance in dense industrial PCB layouts.
Can W632GG8NB-11 TR operate at temperatures above 95°C?
No, W632GG8NB-11 TR is rated for 0°C to 95°C case temperature per its speed grade designation. For operation up to 105°C, select the W632GG8NB11J variant, which includes extended temperature qualification, doubled auto-refresh rate, and MR2 configuration for ASR or Manual Self-Refresh mode.
What is the purpose of the MPR (Multi-Purpose Register) in W632GG8NB-11 TR?
The MPR in W632GG8NB-11 TR provides a predefined 128-bit calibration pattern accessible via standard READ commands. It enables system-level timing margin verification and write leveling without requiring external test equipment or custom firmware - simplifying bring-up and validation of DDR3 interfaces in resource-constrained embedded designs.
W632GG8NB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GG8NB-11 TR FAQ
1.How can I place an order for W632GG8NB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8NB-11 TR reliable?
The price and inventory of W632GG8NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8NB-11 TR is usually 5 days.
3.What payment methods are accepted for W632GG8NB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8NB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8NB-11 TR?
W632GG8NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8NB-11 TR?
For technical support, including W632GG8NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8NB-11 TR requirements.
6.How does Aetrix verify that W632GG8NB-11 TR is sourced from the original manufacturer or authorized distributors?
All W632GG8NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8NB-11 TR meets industry standards.
7.What is the process for return or replacement of W632GG8NB-11 TR?
All W632GG8NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8NB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8NB-11 TR part is unused and in its original packaging.
Return procedure for W632GG8NB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8NB-11 TR Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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