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Winbond Electronics Corporation W632GG8NB-11 TR

Part No.:
W632GG8NB-11 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW632GG8NB-11 TR.pdf
Description:
IC DRAM 2GBIT SSTL 15 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,548

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Product details

Overview

W632GG8NB-11 TR from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 11, or 10. It features on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for reliable memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W632GG8NB-11 TR datasheet, W632GG8NB-11 TR pinout, W632GG8NB-11 TR application, or W632GG8NB-11 TR equivalent, key selection criteria include its VFBGA-78 package, SSTL_15 interface compliance, -40°C to 95°C industrial temperature range, and support for write leveling, multi-purpose register (MPR), and dynamic ODT for high-signal-integrity DDR3 designs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL-aligned DQS-DQ timing, posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), and bi-directional differential strobes ensure precise source-synchronous data capture at 1866 MT/s.

It supports full JEDEC-compliant power management: Precharged/Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR). The device uses asynchronous RESET# for initialization and includes ZQ calibration for output driver and ODT impedance tuning via external 240 Ω resistor.

Key Specifications

ParameterValue and Actual Design Meaning
Capacity2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits
Data RateDDR3-1866 (1866 MT/s), 933 MHz clock frequency
CAS LatencyCL = 13, 11, or 10 (JEDEC-compliant 13-13-13 timing)
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for stable DDR3 signaling
Operating Temp-40°C to +95°C case temperature - qualified for extended industrial environments
PackageVFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free)
InterfaceSSTL_15 - mandates matched-impedance routing and proper termination design
Refresh IntervaltREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires controller refresh scheduling support

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with ball pitch of 0.8 mm. RoHS-compliant, lead-free construction. Window BGA type enables optical alignment during assembly.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address InputsRow/column address bits; A12–A14 also used for mode register programming
BA0–BA2Bank AddressSelects one of eight internal banks for concurrent operation
CK / CK#Differential ClockEdge-triggered command latch point; inputs sampled at CK rising / CK# falling crosspoint
DQ0–DQ7Data I/OBi-directional 8-bit data bus; SSTL_15 compatible with controlled slew rate
DQS / DQS#Differential Data StrobeSource-synchronous strobe; center-aligned on write, edge-aligned on read
DMData MaskPer-byte write mask; active-high, sampled on DQS rising edge
RESET#Asynchronous ResetActive-low; initiates power-up initialization sequence and resets internal state
ODTOn-Die Termination ControlDynamic enable/disable of RTT_NOM/RTT_WR termination resistors per command
WE#, RAS#, CAS#Command InputsStandard DDR3 command pins; decoded on every CK rising edge
VDD / VDDQPower SuppliesSeparate 1.5 V supplies for core (VDD) and I/O (VDDQ); require independent decoupling

Key Features

FeatureDesign Value
Programmable CWLSupports CWL = 5–9; sets write latency WL = AL + CWL for precise timing closure in high-speed writes
ZQ CalibrationUses external 240 Ω resistor to calibrate output driver strength and ODT impedance - critical for signal integrity at 1866 MT/s
Write LevelingEnables per-device DQS-to-CK skew compensation during initialization - required for robust multi-drop DDR3 interfaces
Multi-Purpose Register (MPR)Provides predefined bit pattern for system-level timing calibration - eliminates need for external test patterns
Dynamic ODT (Rtt_WR)Activates ODT only during write bursts - reduces noise and improves signal fidelity without impacting read performance
Partial Array Self Refresh (PASR)Reduces self-refresh current by refreshing only active banks - extends battery life in portable industrial devices

Applications

Industrial PLC Memory BufferNetwork Router Packet Buffer

Use Scenario: Real-time control logic execution with deterministic memory access in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary working memory storing firmware, I/O mapping tables, and real-time process variables.

Use Value: DDR3-1866 bandwidth and low-latency CL13 operation enable sub-microsecond response times for motion control loops.

Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers handling 10 Gbps+ traffic.

IC Role / Device Role / Timing Role: Shared packet buffer supporting simultaneous ingress/egress DMA channels with burst coalescing.

Use Value: Eight-bank concurrency and 1K-page size allow overlapping refresh with active transfers, sustaining >95% utilization under sustained load.

Medical Imaging Front-End ControllerAutomated Test Equipment (ATE) Pattern Memory

Use Scenario: Frame buffering and real-time image processing in ultrasound and digital X-ray acquisition systems.

IC Role / Device Role / Timing Role: Dual-role memory: stores raw sensor data pre-processing and holds calibrated lookup tables for post-processing.

Use Value: Write leveling and MPR support ensure reliable timing margin across temperature extremes encountered in clinical environments.

Use Scenario: Storage of high-fidelity test vectors and expected response signatures in semiconductor ATE platforms.

IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to precision clock generators and jitter-cleaned strobes.

Use Value: SSTL_15 interface and dynamic ODT minimize setup/hold violations during 1866 MT/s vector streaming, reducing pattern error rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M8DA-125:ASame 2 Gb density, VFBGA-78, DDR3-1866, but supports -40°C to +105°C and includes enhanced reliability features (e.g., ECC-ready interface)Preferred for automotive ADAS modules requiring extended temperature and functional safety readinessChoose if operating above 95°C or requiring JEDEC JESD22-A108 qualification
IS43TR16256B-125KBL16-bit bus width (vs. 8-bit), same speed grade and package footprint; requires PCB redesign for x16 interfaceUsed in high-bandwidth FPGA-based accelerators where wider data path justifies layout changeChoose only when system bandwidth demand exceeds 1866 MT/s × 8-bit and board revision is feasible

Compared with MT41K256M8DA-125:A, W632GG8NB-11 TR offers lower cost and identical timing at 95°C max, but lacks extended temp rating and ECC support; versus IS43TR16256B-125KBL, it avoids x16 layout complexity while delivering matched 1866 MT/s throughput per byte lane.

Availability

W632GG8NB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for W632GG8NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, RAM, and trusted computing ICs.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical embedded systems operating across extended temperature ranges and demanding signal integrity requirements.

FAQ

What is the maximum supported CAS Latency for W632GG8NB-11 TR?

W632GG8NB-11 TR supports CAS Latency settings of 13, 11, and 10 per JEDEC DDR3-1866 specification. CL13 is the default and fully characterized timing for the -11 speed grade, delivering tAA = 13.91 ns and tRCD = 13.91 ns at 933 MHz. Lower CL values may be enabled via mode register programming but require validation against system timing margins.

Does W632GG8NB-11 TR support write leveling and how is it implemented?

Yes, W632GG8NB-11 TR supports write leveling as defined in JEDEC DDR3 standard. It uses the DQS strobe in conjunction with the MPR to perform per-device skew calibration during initialization. The controller issues a write leveling command, and the DRAM returns a known pattern on DQ while adjusting DQS delay until edge alignment with CK is achieved - a mandatory step for stable 1866 MT/s operation.

What package type and ball count does W632GG8NB-11 TR use?

W632GG8NB-11 TR uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm height, 0.8 mm ball pitch, and 78 solder balls arranged in a window BGA configuration. This RoHS-compliant, lead-free package is optimized for automated assembly and thermal performance in dense industrial PCB layouts.

Can W632GG8NB-11 TR operate at temperatures above 95°C?

No, W632GG8NB-11 TR is rated for 0°C to 95°C case temperature per its speed grade designation. For operation up to 105°C, select the W632GG8NB11J variant, which includes extended temperature qualification, doubled auto-refresh rate, and MR2 configuration for ASR or Manual Self-Refresh mode.

What is the purpose of the MPR (Multi-Purpose Register) in W632GG8NB-11 TR?

The MPR in W632GG8NB-11 TR provides a predefined 128-bit calibration pattern accessible via standard READ commands. It enables system-level timing margin verification and write leveling without requiring external test equipment or custom firmware - simplifying bring-up and validation of DDR3 interfaces in resource-constrained embedded designs.

W632GG8NB-11 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
SSTL_15
Clock Frequency:
933 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W632GG8NB-11 TR FAQ

1.How can I place an order for W632GG8NB-11 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG8NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG8NB-11 TR reliable?

The price and inventory of W632GG8NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8NB-11 TR is usually 5 days.

3.What payment methods are accepted for W632GG8NB-11 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8NB-11 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG8NB-11 TR?

W632GG8NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG8NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG8NB-11 TR?

For technical support, including W632GG8NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8NB-11 TR requirements.

6.How does Aetrix verify that W632GG8NB-11 TR is sourced from the original manufacturer or authorized distributors?

All W632GG8NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8NB-11 TR meets industry standards.

7.What is the process for return or replacement of W632GG8NB-11 TR?

All W632GG8NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8NB-11 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG8NB-11 TR part is unused and in its original packaging.

Return procedure for W632GG8NB-11 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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