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Winbond Electronics Corporation W632GG8NB-12

Part No.:
W632GG8NB-12
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW632GG8NB-12.pdf
Description:
IC DRAM 2GBIT 78-VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,330

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Product details

Overview

W632GG8NB-12 from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1600 speed (800 MHz clock, 1600 MT/s data rate) with CL=11, tRCD=tRP=11 ns timing, and 1.5 V core/I/O supply. It serves as main system memory in embedded computing, industrial controllers, and network infrastructure where reliable high-bandwidth data buffering is required.

For engineers reviewing the W632GG8NB-12 datasheet, W632GG8NB-12 pinout, W632GG8NB-12 application, or W632GG8NB-12 equivalent, this device supports programmable CAS Write Latency (CWL=5–8), ZQ calibration, on-die termination (ODT), asynchronous RESET#, and multi-purpose register (MPR)-assisted write leveling - critical for signal integrity in dense DDR3 layouts.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# inputs synchronized at the cross-point for command/address latching. Its DLL aligns DQ and DQS transitions to the clock edge, supporting both posted CAS (AL = 0, CL−1, CL−2) and bi-directional differential DQS/DQS# strobes center-aligned on writes and edge-aligned on reads.

It supports full JEDEC-compliant power management including precharged and active power-down modes, self-refresh (IDD6 ≤ 15 mA), auto self-refresh (ASR), partial array self-refresh (PASR), and dynamic ODT (Rtt_WR) with programmable RTT values (60 Ω, 120 Ω, 40 Ω). The -12 speed grade guarantees operation from 0°C to 95°C with tREFI = 7.8 µs at TCASE ≤ 85°C and 3.9 µs at 85°C < TCASE ≤ 95°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (256 MB), organized as 32M × 8 banks × 8 bits - supports standard x8 DDR3 DIMM and SoC memory interfaces.
Data RateDDR3-1600 (1600 MT/s), fCK = 800 MHz - enables 12.8 GB/s peak bandwidth per x8 device in dual-channel configurations.
CAS LatencyCL = 11 (minimum), configurable up to CL = 14 - determines read access delay; CL=11 yields tAA = 13.75 ns at 800 MHz.
Supply VoltageVDD/VDDQ = 1.5 V ± 75 mV - requires tight regulation; compatible with standard DDR3 LDOs and PMICs.
Operating Temp0°C ≤ TCASE ≤ 95°C - validated for industrial-grade thermal environments without derating.
Refresh IntervaltREFI = 7.8 µS (≤85°C), 3.9 µS (85–95°C) - mandates doubled refresh commands above 85°C; ASR or manual self-refresh required.
Interface StandardSSTL_15 I/O - matches JEDEC DDR3 signaling; requires matched 50 Ω trace impedance and proper termination.

Pinout & Package

Packaged in a RoHS-compliant, lead-free 78-ball VFBGA (8 mm × 10.5 mm, 1.0 mm height, Window BGA type) with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address InputsRow/column address bits; A12–A14 also encode bank address during ACT/REF commands.
BA0–BA2Bank AddressSelect one of eight internal banks; decoded with A12–A14 for full bank addressing.
CK, CK#Differential ClockEdge-triggered command/address latch point; cross-point sampling ensures setup/hold margin.
DQ0–DQ7Data I/OBidirectional x8 data bus; SSTL_15 compliant with programmable drive strength and ODT.
DQS, DQS#Differential StrobeSource-synchronous strobe pair; center-aligned on write, edge-aligned on read for timing closure.
DMData MaskPer-byte write mask; asserts during WRITE to suppress corresponding DQ bits without bus turnaround.
RESET#Asynchronous ResetActive-low initialization signal; initiates power-up sequence and resets internal state machines.
ODTOn-Die Termination ControlDynamic enable/disable of internal termination resistors (RTT_NOM = 60/120 Ω, RTT_WR = 40/60/120 Ω).
WE#, RAS#, CAS#Command InputsStandard DDR3 command pins; decoded with CS# and address to generate ACT, READ, WRITE, PRE, REF.

Key Features

FeatureDesign Value
Programmable CWLCWL = 5–8 selectable per frequency bin - enables precise write latency tuning (WL = AL + CWL) to match controller timing margins.
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor - corrects output driver and ODT impedance drift across voltage/temperature.
Write Leveling SupportMPR-based training mode with predefined pattern - allows PHY-level skew compensation between DQS and CK at the DRAM input.
Dynamic ODT (Rtt_WR)Termination enabled only during WRITE bursts - reduces noise and crosstalk on shared DQ/DQS lines while preserving read signal integrity.
Partial Array Self RefreshPASR via MR2 - cuts self-refresh current by refreshing only active banks, extending battery life in portable industrial devices.

Applications

Industrial PLC MemoryNetwork Switch Buffer

Use Scenario: Real-time logic execution and I/O mapping in programmable logic controllers requiring deterministic memory access under temperature cycling.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with DDR3 controller; handles firmware variables, ladder logic stacks, and buffered sensor data.

Use Value: CL=11 and tRCD=11 ns timing ensures sub-15 ns read-to-use latency; 95°C rating avoids thermal throttling in enclosed cabinets.

Use Scenario: Packet buffering in Layer 2/3 Ethernet switches handling 10Gbps line rates with deep packet inspection.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple traffic managers and forwarding engines via DDR3 bus arbitration.

Use Value: Eight-bank architecture enables interleaved burst reads/writes across ports; dynamic ODT minimizes signal reflections on high-speed backplane traces.

Medical Imaging ControllerVideo Surveillance DVR

Use Scenario: Frame buffering and real-time image processing in ultrasound or digital X-ray systems with strict EMI and reliability requirements.

IC Role / Device Role / Timing Role: High-integrity frame store for FPGA-accelerated image reconstruction pipelines; operates alongside ECC-capable memory controllers.

Use Value: Asynchronous RESET# enables safe cold restart after power interruption; ZQ calibration maintains signal fidelity over 10+ year service life.

Use Scenario: Multi-channel HD video encoding and storage buffering in AI-enabled surveillance recorders with 4–16 camera inputs.

IC Role / Device Role / Timing Role: Dual-rank memory subsystem supporting simultaneous encode (H.265), analytics (NN inference), and streaming tasks.

Use Value: Precharged power-down mode reduces idle power to <110 mA (IDD0); PASR cuts self-refresh current during motionless scenes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M8DA-125:ASame density (2 Gb x8), DDR3-1600, CL=11, but uses 96-ball FBGA (10×14 mm) and requires VDD/VDDQ = 1.5 V ± 50 mV.Higher pin count and larger footprint; tighter voltage tolerance increases PMIC cost.Choose if existing layout uses Micron's 96-ball footprint or requires extended -40°C support (industrial grade).
IS43TR16256B-125KBL16-bit wide (x16), 2 Gb density, DDR3L-1600 (1.35 V), CL=11; incompatible bus width and voltage.Requires x16 interface redesign and lower-voltage PMIC; not drop-in replaceable.Consider only for new designs targeting DDR3L power savings and higher data width, not for W632GG8NB-12 replacement.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GG8NB-12 offers identical DDR3-1600 performance in a compact 78-ball VFBGA with relaxed 1.5 V ± 75 mV tolerance - simplifying power design and PCB area usage in space-constrained industrial modules.

Availability

W632GG8NB-12 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and guaranteed 0°C to 95°C operation.

Supply support for W632GG8NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, robust signal integrity features (ZQ, MPR, dynamic ODT), and JEDEC compliance without premium cost premiums.

FAQ

What is the maximum data rate supported by the W632GG8NB-12?

The W632GG8NB-12 supports DDR3-1600 operation, delivering a maximum data rate of 1600 MT/s with an 800 MHz differential clock input. This is confirmed by its speed grade suffix "-12", JEDEC-compliant tAA/tRCD/tRP = 11-11-11 timing, and AC specifications in Section 11.15.2 of the datasheet. The W632GG8NB-12 does not support DDR3-1866 or higher bins.

Does the W632GG8NB-12 support automatic self-refresh (ASR)?

Yes, the W632GG8NB-12 supports Auto Self-Refresh (ASR) as defined in MR2 bit A6. When enabled (MR2[A6]=1), ASR automatically doubles the refresh rate to tREFI = 3.9 µs above 85°C, satisfying JEDEC requirements for operation up to 95°C. This feature is mandatory for thermal stability in the W632GG8NB-12's rated temperature range and is documented in Section 9.3.3.3.

What package type and ball count does the W632GG8NB-12 use?

The W632GG8NB-12 uses a 78-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 10.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. This Window BGA construction is RoHS-compliant and lead-free, as specified in Section 12 of the datasheet and confirmed in the "ORDER INFORMATION" table.

Can the W632GG8NB-12 operate at temperatures below 0°C?

No, the W632GG8NB-12 is rated for 0°C ≤ TCASE ≤ 95°C only. The base -12 speed grade does not support sub-zero operation; for industrial-grade (-40°C) capability, the W632GG8NB12I or W632GG8NB12J variants must be selected. This limitation is explicitly stated in Section 3 (ORDER INFORMATION) and Note 2 of Section 4.

How is on-die termination (ODT) configured on the W632GG8NB-12?

ODT on the W632GG8NB-12 is configured via Mode Registers MR1 (RTT_NOM) and MR2 (Rtt_WR), supporting nominal termination values of 60 Ω or 120 Ω, and dynamic write-time values of 40 Ω, 60 Ω, or 120 Ω. ODT activation is controlled by the ODT pin and timing parameters like tODT and tDQSS, as detailed in Sections 9.19 and 11.10 of the datasheet.

W632GG8NB-12 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W632GG8NB-12 FAQ

1.How can I place an order for W632GG8NB-12 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG8NB-12 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG8NB-12 reliable?

The price and inventory of W632GG8NB-12 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8NB-12 is usually 5 days.

3.What payment methods are accepted for W632GG8NB-12?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8NB-12 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG8NB-12?

W632GG8NB-12 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG8NB-12 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG8NB-12?

For technical support, including W632GG8NB-12 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8NB-12 requirements.

6.How does Aetrix verify that W632GG8NB-12 is sourced from the original manufacturer or authorized distributors?

All W632GG8NB-12 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8NB-12 meets industry standards.

7.What is the process for return or replacement of W632GG8NB-12?

All W632GG8NB-12 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8NB-12, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG8NB-12 part is unused and in its original packaging.

Return procedure for W632GG8NB-12:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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