Winbond Electronics Corporation W632GG8NB-12 TR

Overview

W632GG8NB-12 TR from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with 1.5 V VDD/VDDQ supply, and packaged in a RoHS-compliant 78-ball VFBGA (8 mm × 10.5 mm). It serves as main system memory in embedded computing, industrial controllers, and networking equipment requiring high-bandwidth, low-latency data access.

For engineers reviewing the W632GG8NB-12 TR datasheet, W632GG8NB-12 TR pinout, W632GG8NB-12 TR application, or W632GG8NB-12 TR equivalent, key selection considerations include its DDR3-1600 speed bin, CAS latency support (CL = 5–11), programmable CWL (5–8), on-die termination (ODT), ZQ calibration, and industrial-grade temperature range (0°C to 95°C).

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent operations, differential CK/CK# and DQS/DQS# interfaces synchronized to SSTL_15 logic levels, and DLL-based alignment of DQ and DQS transitions to CK. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional features include asynchronous RESET#, dynamic ODT for write signal integrity, multi-purpose register (MPR) for system-level timing calibration, write leveling for skew compensation, and partial array self-refresh (PASR) to reduce power during idle bank states. The device complies fully with JEDEC DDR3 SDRAM standard JESD79-3F.

Key Specifications

Pinout & Package

W632GG8NB-12 TR uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 8 mm × 10.5 mm body size, and 1.0 mm maximum thickness. Pinout follows JEDEC-standard DDR3 ball assignment for x8 configuration, including dedicated VDD, VDDQ, VSS, VSSQ, and VREF pads distributed across the array for stable power delivery and reference integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GG8NB-12 TR offers superior power efficiency via PASR and system-level calibration support through MPR and write leveling-critical for thermally constrained embedded systems where layout flexibility and signal integrity tuning outweigh minor footprint advantages.

Availability

W632GG8NB-12 TR is available at Aetrix Electronics and suitable for industrial PLCs, network switch buffers, medical imaging controllers, and embedded video encoders requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GG8NB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GG8NB-12 TR belongs to Winbond's W632G family of DDR3 SDRAMs designed specifically for cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant performance with enhanced power management and calibration features.

FAQ

What is the maximum supported CAS latency for W632GG8NB-12 TR at DDR3-1600 speed?

W632GG8NB-12 TR supports CAS latency settings from CL = 5 through CL = 11 at DDR3-1600 speed (800 MHz clock). CL = 11 corresponds to a minimum tAA of 13.75 ns and is the highest latency setting validated for full-speed operation in the -12 speed grade. Higher CL values (e.g., CL = 13 or 14) are not supported in this speed bin per the datasheet's Sup_CL table.

Does W632GG8NB-12 TR support dynamic ODT during write operations?

Yes, W632GG8NB-12 TR supports dynamic ODT (Rtt_WR) during write operations, allowing runtime selection of termination resistance values (e.g., 120 Ω, 60 Ω, 40 Ω) via MR2. This feature improves signal integrity on bidirectional DQ buses by enabling on-the-fly termination activation only when needed, reducing power versus static ODT.

What is the required external resistor value for ZQ calibration on W632GG8NB-12 TR?

W632GG8NB-12 TR requires a 240 Ω ±1% external resistor connected between the ZQ pin and VSS (ground) for factory and runtime calibration of output drivers and on-die termination. The resistor must have low parasitic inductance and be placed within 5 mm of the ZQ ball per layout guidelines in the datasheet.

Can W632GG8NB-12 TR operate in temperatures above 95°C?

No, W632GG8NB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C only. For operation up to 105°C, the W632GG8NB12J variant must be used, which includes extended-temperature qualification, mandatory ASR or Manual Self-Refresh mode, and doubled refresh rate (tREFI = 3.9 µS).

How does the Multi-Purpose Register (MPR) function in W632GG8NB-12 TR?

The MPR in W632GG8NB-12 TR outputs a fixed 128-bit pattern (0x0000000000000000FFFFFFFFFFFFFFFF) on DQ pins during MPR read mode. This known pattern enables system-level timing margin testing, write leveling calibration, and signal integrity validation without accessing actual memory contents or disrupting normal operation.